A5030673944- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Diamond and Carbon-based Materials Research
- Advanced Surface Polishing Techniques
- Plasma Diagnostics and Applications
- Carbon Nanotubes in Composites
- Fault Detection and Control Systems
- High-pressure geophysics and materials
- Nanofabrication and Lithography Techniques
- Electronic Packaging and Soldering Technologies
- 3D IC and TSV technologies
- Advanced Welding Techniques Analysis
- Advanced optical system design
- Semiconductor materials and interfaces
- Photoreceptor and optogenetics research
- Water Quality Monitoring and Analysis
- Semiconductor Lasers and Optical Devices
- Sensor Technology and Measurement Systems
- Silicon Carbide Semiconductor Technologies
- Photonic and Optical Devices
- Boron and Carbon Nanomaterials Research
- Real-time simulation and control systems
- Phase-change materials and chalcogenides
- Neuroscience and Neural Engineering
Fraunhofer Institute for Electronic Nano Systems
2020-2024
Chemnitz University of Technology
1991-2024
In this study, we present a novel approach combining nano-scale imprint lithography (NIL) and reactive ion etching (RIE) to fabricate high-quality surface relief gratings (SRGs). This study provides valuable insights into the challenges optimizations in fabricating SRGs from TiO<sub>2</sub> layers using combination of NIL RIE. The work was performed with SCHOTT RealView® substrates coated 100 nm layer mask pattern widths 200 pitch 400 nm. were processed SmartNIL® method prepare mask....
Improved hearing restoration by cochlear implants (CI) is expected optical (oCI) exciting optogenetically modified spiral ganglion neurons (SGNs) via an pulse generated outside the cochlea. The guided to SGNs inside cochlea flexible polymer-based waveguide probes. fabrication of these probes realized using 6" wafer-level micromachining processes, including lithography processes such as spin-coating cladding layers and a layer in between etch for structuring layer. Further adhesion metal...
Hybrid bonding is key to achieving high-quality interconnect interfaces for fine pitch integration. It has an advantage over other types of interconnects as it allows a high I/O count high-density memory, increased power and improved signal speed. To achieve hybrid bonding, Cu are embedded in the dielectric. The surface planarized using chemical mechanical polishing. final CMP process usually two-step involving copper bulk then barrier CMP. Barrier leads finish which used bonding. four...
To obtain qualitatively different amorphous carbon networks we carried out molecular dynamics simulations at mean atomic densities using the Tersoff potential. Differences among radial distribution functions obtained as well ratio of threefold- and fourfold-coordinated atoms according to are discussed. The electronic stability models is investigated by means their total states which characterized significant defect bands. These bands ascribed uncorrelated free-atomic p orbitals occurring in...
Plasma patterning processes play a key role in modern Ultra Large Scale Integration (ULSI) device fabrication. With further scaling of dimensions, plasma process characteristics become more and the limiting factor pattern minimization, not least due to parasitic effects caused by different properties. Such are geometrical deviations etch profiles, loss critical undercut as well most sidewall damage while etching trenches vias fabricate circuit contact metallization system. Especially for...
Microlenses are a suitable approach to improve the performance of optical systems. An important efficiency determining parameter is fill factor, which describes relation lens area total active area. In this work, an optimization factor by optimizing fabrication process steps presented. The here use i-line waferstepper lithography in combination with thermal reflow photoresist and subsequent 1:1 pattern transfer material reactive ion etching. For method, determined minimum gap and, thus,...
In this study, we present the Method of Spectral Redundancy Reduction (MSRR) for analyzing OES (optical emission spectroscopy) data dry etching processes based on principles spectral clustering. To achieve this, are transformed into abstract graph matrices whose associated eigenvectors directly indicate anomalies in set. We developed an approach that allows reduction temporally resolved optical spectra from plasma structuring such a way individual lines can be algorithmically detected, which...
To minimize etching damage of the underlying material, atomic layer (ALE) with low-energy ions was used for structuring silicon. The ion energy distribution determined using a retarding field analyzer. tool achieved maximal 136 eV at 140 W bias power and an average 11.1 without applied power. plasma-enhanced ALE included Cl <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> adsorption Ar desorption step. varied between 8 22 W. observed etch...
This paper reports the development and integration of (Poly‐Si/Air) n Distributed BRAGG Reflectors (DBR) in a MOEMS Fabry‐Pérot‐Interferometer (FPI) concept. The realized reflectors constitute promising resource‐efficient alternative to complex Ion‐Assisted Deposition based DBRs while maintaining their advantages. Compared state art FPIs can be integrated into two moveable reflector carriers on individually fabricated wafers which are bonded. investigated as (HL) 2 stacks showing reflectance...
The temporal behavior of the molecular etching product SiF4 in fluorocarbon-based plasmas used for dry ultra low-k (ULK) materials has been brought into connection with polymer deposition on surface during plasma treatment within scope this work. For purpose, time-resolved measurements density have performed by quantum cascade laser absorption spectroscopy. A quantification non-linear time dependence was achieved its characterization via a constant decreasing over process time. predicts how...
Based on the observations of time behavior etching product SiF <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> , an analytical model was derived. physical quantities in equation, production rate and suppression are introduced, which can be used to describe process.
This paper describes the process chain for fabrication of 8" Nanoimprint-Lithography (NIL) masters with optical nano gratings by use an i-line wafer stepper and reactive ion etching (RIE) NIL master replication. Process parameters lithography are evaluated to achieve a nanostructure homogeneity 400 nm lines spaces (800 period) in different etch depths aspect ratio up 5:1 (2000 depth) over wafer. During evaluation, RIE processes Si SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML"...