A5065086396- GaN-based semiconductor devices and materials
- Plasmonic and Surface Plasmon Research
- Photonic Crystals and Applications
- ZnO doping and properties
- Gold and Silver Nanoparticles Synthesis and Applications
- Ga2O3 and related materials
- Advanced biosensing and bioanalysis techniques
- Metal and Thin Film Mechanics
- Boron and Carbon Nanomaterials Research
- Nanofabrication and Lithography Techniques
- Optical Coatings and Gratings
- Biosensors and Analytical Detection
- Pickering emulsions and particle stabilization
- Rare-earth and actinide compounds
- Semiconductor Quantum Structures and Devices
- 2D Materials and Applications
- Inorganic Chemistry and Materials
- Photonic and Optical Devices
- MXene and MAX Phase Materials
- Nonlinear Optical Materials Studies
- Nanomaterials and Printing Technologies
- Metamaterials and Metasurfaces Applications
- Advanced materials and composites
- Magnetic Properties of Alloys
- Carbon and Quantum Dots Applications
TU Dresden
2020-2023
Southwest Jiaotong University
2023
Jilin University
2012-2021
Hubei Polytechnic University
2021
State Key Laboratory on Integrated Optoelectronics
2007-2021
Huangshi Central Hospital
2021
Entry Exit Inspection and Quarantine Bureau
2012-2020
Soochow University
2020
Zhangjiagang First People's Hospital
2020
Leibniz Institute of Polymer Research
2017-2019
Mycotoxins posit serious threats to human and animal health, numerous efforts have been performed detect the multiple toxins by a single diagnostic approach. To best of our knowledge, for first time, we synthesized an aptamer induced "turn on" fluorescence resonance energy transfer (FRET) biosensor using dual-color gold nanoclusters (AuNCs), l-proline, BSA AuNCs (Lp-AuNCs BSA-AuNCs), with WS2 nanosheet simultaneous recognition aflatoxinB1 (AFB1) zearalenone (ZEN) excitation. Here, AFB1...
Electrofluorochromism has attracted great attention due to the intelligence optoelectronic and sensing applications. The intrinsically switchable fluorophores with high solid-state fluorescence are regarded as key for ideal electrofluorochromic materials. Here, we reported an AIE-active polyamide diphenylamine tetraphenylethylene units, showing quantum yield up 69.1% solid polymer film stable electrochemical cycling stability. exhibited reversible color emission switching even in hundreds of...
Optical resonances in metallic nanostructures are promising enabling high-resolution plasmonic color prints, filters, and rendering colors for plastic consumer products. However, nanostructure patterning approaches have relied on charged-particle beam lithography, with limited throughput. For the purpose of visually evaluating spanning a large parameter space, it is important to develop rapid cost-effective approach areas. The speed at which space explored experimentally needs be comparable...
Abstract Two‐dimensional material (2D) that possesses atomic thin geometry and remarkable properties is a star for the fundamental researches advanced applications. Defects in 2D materials are critical to understand chemical, physical, optical properties. Photoluminescence arises owing various physical phenomena including activator/dopant‐induced luminescence defect‐related emissions, so forth. With transmission electron microscopy (TEM) technologies, such as aberration correction low...
Abstract Strain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed films graphene/SiC substrates by metal-organic chemical vapor deposition demonstrated. Graphene was directly prepared SiC thermal decomposition. Its pre-treatment with nitrogen-plasma can introduce C–N dangling bonds, which provides nucleation sites subsequent epitaxial growth. The scanning transmission electron microscopy measurements confirm that part graphene...
Tunable sub-10 nm 1D nanogaps are fabricated based on nanoskiving. The electric field in different sized is investigated theoretically and experimentally, yielding nonmonotonic dependence an optimized gap-width (5 nm). 2D nanogap arrays to pack denser gaps combining surface patterning techniques. Innovatively, 3D multistory built via a stacking procedure, processing higher integration, much improved field. As service our authors readers, this journal provides supporting information supplied...
Abstract Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately, only Ga‐polarity GaN have been achieved on graphene till now. Here, the epitaxy of high quality nitrogen‐polarity films transferred non‐polar sapphire substrates by molecular beam reported. This success through atomic nitrogen irradiation, where CN bonds are formed in and provide nucleation sites leading to N‐polarity epitaxy. The characteristics confirmed chemical etching transmission electron...
In this paper, Janus micropillar array (MPA) with fore–aft controllable wettability difference was demonstrated. With two-step modification process, we successfully decorate the pillar skeletons wettability-switchable polymer brush on one side and hydrophilic self-assembled monolayer other. Owing to switchable of brush, patterned surface could switch between anisotropic wetting isotropic at different temperatures, which gives possibility coupling well-designed microfluidic channel manipulate...
A continuous thick (≥ 100 nm) Ag film is generally optically nontransparent, but here we show that via a dedicated structuring it can be made transparent. The enhanced optical transmission realized by preparing metal films with periodic array of hollow nanocones an inexpensive and versatile colloidal lithography technique. These topologically possess the structural feature sharp top tips bottom nanoholes, leading to effective resonance mode coupling between surface plasmons around holes cone...
Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The increased ∼17 times compared that of p-GaN at 300 K. fitting results temperature-dependent indicated the holes in graded p-AlGaN comprised both polarization-induced and thermally activated ones. By optimizing growth...
Epitaxial growth of III-nitrides on 2D materials enables the realization flexible optoelectronic devices for next-generation wearable applications. Unfortunately, it is difficult to obtain high-quality III-nitride epilayers such as hexagonal BN (h-BN) due different atom hybridizations. Here, epitaxy single-crystalline GaN films chemically activated h-BN/Al2O3 substrates reported, paying attention interface atomic configuration. It found that chemical-activated h-BN provides B-O-N and N-O...
Novel nanohole arrays with volcano‐shaped holes (truncated cones) are reported to obtain structural colors excellent purity without using index‐matching layers. They further show efficient sensitive environment responses. The novel structures fabricated via a low‐cost, large‐area colloidal lithography method. Numerical simulations demonstrate that each nanovolcano, comprising one upper hole and lower hole, excites two surface plasmon resonances (SPRs), generating only single transmission...
We highlight a novel fluorescence analysis for sensitive and selective detection of EV-71 CV-A16 by combining labelling technology based on dual-colour upconversion nanoparticles (UCNPs) with magnetic bioseparation concentration magnetite (MNPs).
A one-way valve for microfluidic systems is fabricated based on Janus Si pillar arrays with outstanding anisotropic wettability. The shows great ability to guide the fluid flow and separate gas from liquid in systems, which will be a competitive candidate further improvement of systems.
In this study, we have demonstrated an N-polar III-nitride tunnel junction (TJ) light-emitting diode (LED). The LED was grown on GaN template sapphire substrates by metal-organic vapor phase epitaxy. growth started with the n-GaN cladding layer, whose doping condition optimized periodic method, and then InGaN/GaN quantum well active region. Subsequently, TJ comprising a graded p-AlGaN thin undoped Al0.4Ga0.6N interlayer, topmost layer. I–V measurement shows that device resistance of...
Effective ultraviolet light-emitting diodes (LEDs) were fabricated by clamping the n-ZnO films on top of p-hBN/p-GaN/sapphire substrates. An emission originating from ZnO was measured diode under a forward bias, electroluminescence (EL) spectra which show peak wavelength ∼376 nm with narrow full-width at half maximum ∼12 nm. Compared reference directly growing p-hBN substrates using metal-organic chemical vapor deposition, proposed showed dramatic increment EL intensity; meanwhile, its onset...