A5038671225- Semiconductor Lasers and Optical Devices
- Photonic Crystals and Applications
- Photonic and Optical Devices
- Microwave Engineering and Waveguides
- Advanced Antenna and Metasurface Technologies
- Antenna Design and Analysis
University of Glasgow
2018-2024
Chongqing University of Posts and Telecommunications
2024
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
Quantum dot-based epitaxially regrown photonic crystal surface emitting lasers are demonstrated at room temperature. The GaAs-based devices, which monolithically integrated on the same wafer, exhibit ground state lasing ∼1230 nm and excited ∼1140 with threshold current densities of 0.69 1.05 kA/cm2, respectively.
Abstract The finite size of 2D photonic crystals results in them being a lossy resonator, with the normally emitting modes conventional crystal surface lasers (PCSELs) differing photon lifetime via their different radiative rates, and in-plane losses higher order spatial modes. As consequence, fundamental mode (lowest loss) lowest out-of-plane scattering is primary lasing mode. For electrically driven PCSELs, as current increased, incomplete gain clamping additional (and spectral) leading to...
This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, coupling coefficients. A design a square lattice circle atoms is considered.
ABSTRACT In this letter, a single‐layer wideband filtenna with multiple controllable radiation nulls is presented. The developed has very simple structure and composed square substrate integrated waveguide (SIW) cavity, patch, pair of U‐shaped slots. Notably, the possesses three that can be tuned by adjusting specific geometrical parameters. To achieve wide bandwidth better frequency selectivity, TM 10 mode patch utilized to couple TE 210 SIW cavity. And null at upper lower edge passband...
We demonstrate for the first time a monolithic all-semiconductor photonic crystal surface emitting WDM laser device operating across O-band between 1298 and 1340nm with SMSR exceeding 35dB on all channels.
Probabilistic Markov Chains modelling to define the relationship between microscopic scattering and macroscopic device level losses of photonic crystal surface emitting lasers (PCSEL) is reported. Here, we assume a priori knowledge via simulation or measurement. The commissioning simulator, convergence criteria are discussed.
In this paper we discuss the development of all-semiconductor photonic crystal surface emitting lasers. These devices offer novel routes to coherently coupled arrays which promise previously unachievable levels brightness and a route all-electronic beam steering from single element device.
In this paper we discuss the development of all-semiconductor photonic crystal surface emitting lasers. These devices offer novel routes to coherently coupled arrays and a route all-electronic beam steering from single element device.
In this paper we discuss the development of all-semiconductor photonic crystal surface emitting lasers. These devices offer novel routes to coherently coupled arrays and a route all-electronic beam steering from single element device.
We outline advances in the design, manufacture, and characterisation of a range all-semiconductor photonic crystal surface emitting lasers (PCSELs). initially discuss AlAs/GaAs based PC devices that enjoy improved index contrast compared to our previous GaInP/GaAs devices. will also InGaAsP/InP PCSELs operating at 1550 nm. For these high aspect ratio structures, infill is significant epitaxial challenge, optimisation MOVPE growth conditions such as temperature, rate temperature increase,...
Resonator embedded photonic crystal surface emitting lasers are reported. Reduced threshold current and enhanced slope efficiencies demonstrated in InP-based 1310nm PCSELs. Band-structure analysis of 1550nm devices demonstrates that frequency selective cavity enhancement band-edges (and hence lasing mode selection) may be obtained.
Quantum dot based epitaxially regrown photonic crystal surface-emitting lasers (PCSELs) are demonstrated at room temperature. The GaAs devices exhibit ground-state lasing at~ 1230 nm and excited-state 1140 with threshold current densities of 0.69 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{kA}/\text{cm}^{2}$</tex> 1.05 , respectively.