A5032444194- Interconnection Networks and Systems
- ZnO doping and properties
- Embedded Systems Design Techniques
- GaN-based semiconductor devices and materials
- Parallel Computing and Optimization Techniques
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- Advanced Memory and Neural Computing
- Video Coding and Compression Technologies
- Gas Sensing Nanomaterials and Sensors
- Copper-based nanomaterials and applications
- Photonic and Optical Devices
- Advanced Vision and Imaging
- Semiconductor Lasers and Optical Devices
- Advanced Data Compression Techniques
- Software-Defined Networks and 5G
- Image Enhancement Techniques
- Advanced Image Processing Techniques
- Transition Metal Oxide Nanomaterials
- Metal and Thin Film Mechanics
- Image and Video Quality Assessment
- Advanced Neural Network Applications
- Digital Filter Design and Implementation
- CCD and CMOS Imaging Sensors
- VLSI and Analog Circuit Testing
Zhengzhou University
2025
Nanjing University of Chinese Medicine
2025
Jiangsu Province Hospital
2025
Southeast University
2025
China National Petroleum Corporation (China)
2024
Hefei University of Technology
2014-2024
China University of Mining and Technology
2024
Jilin University
2008-2018
State Key Laboratory on Integrated Optoelectronics
2008-2018
Hefei University
2014
The mosacity and optical properties of ZnO on (0001) Al2O3 grown by pulsed-laser deposition have been studied x-ray diffraction spectroscopic ellipsometry. Strong dependence has found between the grain size residual strain along c axis, εzz, as well film texture. In general, relieves texture improves at larger regardless growth conditions. excitonic transition energies are also to vary in presence field. It is observed that increase with increasing eventually they resolved into two...
The properties of the ZnO thin films prepared by metalorganic vapor phase epitaxy under various oxygen partial pressures were thoroughly studied. It was found that conduction type in undoped epilayers could be controlled adjusting family VI precursor, pressure during growth. characteristic n-type conductivity lower than 45 Pa. With increase content, crystallinity degraded to polycrystalline with additional (10–12) orientation and intrinsic p-type produced as larger 55 hole concentration...
ZnO homojunction light-emitting diode with n-ZnO∕p-ZnO:As∕GaAs structure is produced by metal organic chemical vapor deposition. The p-type ZnO:As film obtained out of thermal diffusion arsenic from GaAs substrate subsequent annealing at 550°C. n-type layer composed unintentionally doped film. Desirable rectifying behavior observed the current-voltage curve p-n homojunction. Furthermore, two distinct electroluminescence bands centered 3.2 and 2.5eV are junction under forward bias room temperature.
The coexistence of electric and magnetic orders with intrinsic coupling, referred to as magnetoelectric coupling in multiferroics, has been extensively studied oxide materials but remains relatively unexplored van...
A novel two-photon upconversion luminescence process was reported in Yb³⁺/Tm³⁺ co-doped LuAG transparent ceramics. Systematic photoluminescence measurements as a function of Tm³⁺ concentration reveal that an optimal doping level of...
Abstract Microporous membranes featuring 3D nanochannels present a compelling avenue for energy‐efficient liquid separations, attributable to their tunable interconnected through‐pore structures. However, the rational design of 3D‐nanochannel that simultaneously achieve high permeance and selectivity remains challenge, arising from scarcity appropriate molecular building blocks reliance on empirical synthetic methods. Herein, an innovative polyacylhydrazone (PAH) membrane with unique...
ZnO homojunction light-emitting diode was grown on single-crystal GaAs (100) substrate by ultrasonic spray pyrolysis. This comprised of N–In codoped p-type and unintentionally doped n-type film. Ohmic contact layer formed Zn∕Au Au∕Ge∕Ni alloyed metal electrodes, respectively. An electroluminescence emission associated with defects observed from the under forward current injection at room temperature. The I-V characteristics showed a threshold voltage ∼4V bias.
Deep neural network (DNN) has become a pivotal machine learning and object recognition technology in the big data era. The softmax layer is one of key component layers for completing multi-classification tasks. However, contains complex exponential division operations, resulting low accuracy long critical paths hardware accelerator design. In order to solve above issues, we present architecture with proper accuracy, good trade-off strong expansibility. We summarize classification rules...
The optical properties of polycrystalline ZnO have been studied to elucidate the occurrence random laser action. spatially-resolved refractive index has mapped out by using scanning electron energy loss spectroscopy across grain boundary. It is observed that decreases gradually when probe beam approaching A thin reflective layer ∼10 nm found form in vicinity boundary, which assists scattering. photon scattering factor determined and shown correlate well with results coherent backscattering...
An n-ZnO/p-ZnO : Sb homojunction light emitting diode was fabricated on c-plane sapphire by metal–organic chemical vapour deposition (MOCVD). The p-type ZnO layer with a hole concentration of 1.27 × 1017 cm−3 using trimethylantimony (TMSb) as the doping source. current–voltage characteristics device exhibited desirable rectifying behaviour turn-on voltage 3.3 V. Distinct electroluminescence ultraviolet and visible emissions detected from this under forward bias at room temperature. Moreover,...
Three green light emitting InGaN/GaN multiple quantum well (MQW) structures with different In composition grown by metal-organic chemical vapor deposition are investigated the X-ray diffraction and temperature-dependent photoluminescence (PL) measurements. It is found that when increases in MQWs, PL spectral bandwidth may anomalously decrease increasing temperature. The reduction of be ascribed to enhanced non-radiative recombination process which lower emission efficiency localized...
The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) with different thicknesses low temperature grown GaN cap layers are investigated. It is found that the MQW emission energy red-shifts peak intensity decreases increasing layer thickness, which may be partly caused by increased floating indium atoms accumulated at quantum well (QW) surface. They will result in interface roughness, higher defect density, even lead to a thermal degradation QW layers. An extra growth...
GaAs single junction solar cells were fabricated on epitaxial liftoff (ELO) 4:″ wafers. 1 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> have been with a yield ≫80% across full 4″ ELO Photoluminescence studies of wafers showed no evidence residual strain in the layers as indicated by peak at 870 nm 300 K. Transmission electron microscopy threading dislocations, voids or delaminating semiconductor-metal interface. Quantum efficiency...