A5061821285- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- ZnO doping and properties
- Ga2O3 and related materials
- Ion-surface interactions and analysis
- Metal and Thin Film Mechanics
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Advanced ceramic materials synthesis
- Radiation Effects in Electronics
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Graphene research and applications
- Gas Sensing Nanomaterials and Sensors
- Fusion materials and technologies
- Semiconductor Quantum Structures and Devices
- 2D Materials and Applications
- Copper-based nanomaterials and applications
- Acoustic Wave Resonator Technologies
- Advanced Memory and Neural Computing
- Diamond and Carbon-based Materials Research
- Spectroscopy and Quantum Chemical Studies
- Advanced materials and composites
- Electronic and Structural Properties of Oxides
- Ferroelectric and Piezoelectric Materials
Xi'an Jiaotong University
2014-2025
Changchun Institute of Optics, Fine Mechanics and Physics
2020-2024
Chinese Academy of Sciences
2006-2024
Xinjiang University
2024
University of Chinese Academy of Sciences
2008-2023
Shenzhen University
2020
Changchun University of Technology
2020
University of Science and Technology of China
2014-2017
Collaborative Innovation Center of Chemistry for Energy Materials
2016
Xiamen University
2016
Abstract Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap, high breakdown field energy density, excellent chemical thermal stability. However, application has been severely hindered by the low p-doping efficiency, which is ascribed ultrahigh acceptor activation originated from valance band maximum. Here, a modulation mode proposed quantum engineering doping method conducted achieve high-efficient p-type ultra-wide nitrides, GaN...
Integrating ferroelectric AlScN with III-N semiconductors to enhance the performance and tunability of nitride devices requires high-quality films. This work focuses on effect regulation mechanism post-annealing in pure N2 crystal quality properties It is found that improves increasing annealing temperatures. Remarkably, leakage current films caused by grain boundaries could be reduced four orders magnitude after at 400 °C. The growth dynamics simulations band structure calculations indicate...
The quantum interference in singlet fission (SF) among the multiple pathways from excited states to correlated triplet pair is comprehensively investigated. analytical analysis reveals that this strongly affected by exciton–exciton coupling and closely related property of J- H-type aggregates. Different spectra aggregates, which depends only on sign coupling, SF additionally signs couplings between states. dynamics further demonstrated numerically a time-dependent wavepacket diffusion method...
AlScN-based memristors show high potential of non-volatile storage and neuromorphic computing. Here, we report an AlScN/n-GaN heterostructure memristor with a large ON/OFF ratio over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{5}}$ </tex-math></inline-formula> attributed to the coexistence heterointerface energy band modulation trap-assisted conduction mechanisms. Unlike typical ferroelectric...
The voids will be formed in the physical vapor deposited (PVD)-AlN epilayer after high temperature annealing. In this work, formation mechanism of and its effect on crystal quality are investigated. Based microstructural analysis first principles calculations, it is confirmed that (1) dislocations mainly gather around strain status similar to other regions same PVD-AlN epilayer, (2) paired with opposite signs prefer move closer react each during annealing, thus contributing voids, (3)...
A time-dependent wavepacket diffusion method is used to investigate the effects of charge transfer (CT) states, singlet exciton, and multiexciton migrations on fission (SF) dynamics in organic aggregates. The results reveal that incorporation CT states can result SF different from direct interaction between exciton multiexciton, an obvious interference also observed channel indirect mediated by states. In case interaction, although fast population monomers, caused increase exciton–exciton...
In this review, we summarize the computationally efficient time‐dependent approaches to calculating vibronic spectra including one‐photon/two‐photon absorption (OPA/TPA), emission, circular dichroism (CD), and resonance Raman/hyper‐Raman scattering (RRS/RHRS) with inclusion of mode‐mixing, Frank–Condon (FC) Herzberg–Teller (HT) effects. At first, a unified dependency spectral differential cross sections (SDCSs) on generalized linear polarizability is derived in view relationship between...
In this work, we investigate the microstructure evolution of surface-nanocrystallized reduced activation ferrite/martensite steels upon high-dose helium ion irradiation (24.3 dpa). We report a significant irradiation-induced grain growth in irradiated buried layer at depth 300–500 nm, rather than peak damage region (at ∼840 nm). This phenomenon can be explained by thermal spike model: minimization boundary (GB) curvature resulting from atomic diffusion cascade center near GBs.
Molecular dynamics (MD) simulations were conducted to investigate the temperature effects on primary damage in gallium nitride (GaN) material. Five temperatures ranging from 300 K 900 studied for 10 keV Ga knock-on atom (PKA) with inject direction of [0001]. The results MD showed that threshold displacement energy (Ed) was affected by and at higher temperature, it larger. evolutions defects under various similar. However, found increase peak number, time, final time recombination efficiency...
In the present work, improved crystal quality of GaN on a graphene-covered sapphire substrate was achieved compared to grown bare substrate, and growth mechanism quasi-van der Waals epitaxy with an AlN nucleation layer clarified using metal-organic chemical vapor deposition. The in situ N-doping graphene by NH3 source during responsible for nucleation. first-principles calculation indicated that N atoms doped initially at step edges subsequently its center nuclei followed same sequence,...
Abstract GaN-based semiconductors are promising materials for solid-state optoelectronic applications. However, the strong internal electrostatic field (IEF) along [0001] direction is a serious problem that harms efficiency of lighting devices based on due to quantum confined Stark effect. Here we theoretically predict method, reducing dimensions from bulk two-dimensional (2D) structures, fundamentally remove IEF. After thinning several nanometers, wurtzite configuration (with IEF)...