A5005073811- Astrophysics and Cosmic Phenomena
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Gamma-ray bursts and supernovae
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Piezoelectric Materials
- Dark Matter and Cosmic Phenomena
- Ferroelectric and Negative Capacitance Devices
- Electromagnetic Compatibility and Noise Suppression
- Radio Astronomy Observations and Technology
- Nuclear Physics and Applications
- Acoustic Wave Resonator Technologies
- Solar and Space Plasma Dynamics
- Photonic and Optical Devices
- Power Systems and Renewable Energy
- Electronic and Structural Properties of Oxides
- Pulsars and Gravitational Waves Research
- Particle Accelerators and Free-Electron Lasers
- Radiation Therapy and Dosimetry
- Neutrino Physics Research
- Magnetic confinement fusion research
- Stellar, planetary, and galactic studies
- High-Temperature Coating Behaviors
- Terahertz technology and applications
- Integrated Circuits and Semiconductor Failure Analysis
Chiba Institute of Technology
2023-2025
Tokyo Metropolitan University
2016-2024
Nagoya University
2005-2016
Hiroshima International University
2015
RIKEN Advanced Science Institute
2013
Konan University
1999-2012
Panasonic (Japan)
1995-2011
Doshisha University
2001-2002
Cardiovascular Research Foundation
2001
Lenox Hill Hospital
2001
The purpose of this study was to determine the efficacy stent-based delivery sirolimus (SRL) alone or in combination with dexamethasone (DEX) reduce in-stent neointimal hyperplasia. SRL is a potent immunosuppressive agent that inhibits SMC proliferation by blocking cell cycle progression.Stents were coated nonerodable polymer containing 185 microgram SRL, 350 DEX, and DEX. Polymer biocompatibility studies porcine canine models showed acceptable tissue response at 60 days. Forty-seven stents...
Temperature-dependent current-voltage characteristics of fully processed Ba 0.7 Sr 0.3 TiO 3 thin film capacitors integrated in a charge-coupled device delay-line processor as bypass were studied. The with thickness 185 nm formed by metal-organic decomposition processing. leakage current measured after completion the integration process was 1 to 2 orders magnitude higher than that capacitor patterning. at low voltages (<1 V, 50 kV/cm) indicated ohmic conduction within temperature range...
Sub-TeV gamma-ray emission from the North-West rim of supernova remnant RX J0852.0$-$4622 was detected with CANGAROO-II telescope and recently confirmed by H.E.S.S. group. In addition, data revealed a very wide (up to two degrees in diameter), shell-like profile emission. We have carried out CANGAROO-III observations January February 2005 three telescopes show here results three-fold coincidence data. confirm about morphology energy spectrum, find spectrum NW-rim is consistent that whole remnant.
We have observed the giant radio galaxy Centaurus A and globular cluster $ω$ Centauri in TeV energy region using CANGAROO-III stereoscopic system. The system has been operation since 2004 withan array of four Imaging Atmospheric Cherenkov Telescopes (IACT) with $\sim$100-m spacings. observations were carried out March April 2004. In total, approximately 10 hours data obtained for each target.No statistically significant gamma-ray signal found above 420 GeV over a wide angular (a one-degree...
Abstract A 3V 100ns read/write 256kb ferroelectric nonvolatile memory (FeRAM) is achieved with 1T/1C cells, novel reference cell circuits and plate circuits. The FeRAM fabricated in 1.2um CMOS process single Aluminum interconnection Bi based layered perovskite material “Y-l” has no fatigue even after 1012 destructive read re-write stress cycles.
Because accretion and merger shocks in clusters of galaxies may accelerate particles to high energies, are candidate sites for the origin ultra-high-energy (UHE) cosmic rays. A prediction was presented gamma-ray emission from a cluster at detectable level with current generation imaging atmospheric Cherenkov telescopes. The produced via inverse Compton upscattering microwave background photons by electron–positron pairs generated collisions UHE rays cluster. We observed two galaxies, Abell...
Abstract We have successfully incorporated the ferroelectric and high dielectric constant capacitors into integrated circuits. The GaAs MMICs with BST been widely used for cellular phones. technology is also applied to a silicon CCD delayline processor VCRs camcorders. With respect Y1, an experimentally fabricated 256k bit FeRAM has exhibited remarkable performance of 100 ns 3V operation 1T/1C cell configuration dedicated FeRAM. These ferroelectrics achieved by controlling properties in thin...
This study presents a design method for the continuous switching test circuits of power devices. Depending on relationship between rated voltage DC source and device under (DUT), two types are proposed. These comprise cascaded buck-boost (or boost-buck) converter to achieve regeneration. Based analysis circuits, is proposed ensure that any failure does not spread circuit even when DUT fails during tests. A designed according method, its experimental results demonstrate validity design.
Recently, induction heating systems are being widely used in many applications, and wireless power transmission introduced into commercially available electrical vehicles. These applications use time varying magnetic fields (under 100 kHz) which close proximity of the human body. Therefore, it should be discussed an influence around kHz to This paper presents design implementation a field generator for biological research. While conventional generators only produce one frequency component,...
Direct integration of AlGaAs/GaAs HEMTs on AlN ceramic substrates has been demonstrated based the fluidic self-assembly (FSA) technology. The FSA is a unique technology to arrange small device blocks (around few tens microns) onto other substrates. With this core part HEMT having no pad can be mounted substrate. then connected electrically with circuit substrate using planar wiring process. This eliminates large stray capacitance and inductance in conventional It that good FET...
A solution for conformal n-type finFET extension doping is demonstrated, yielding I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> values of 1.23 mA/μm at xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> =100 nA/um 1V. This high device performance results from 40% reduced external resistance, which in term stemming 130% increased fin sidewall (confirmed by SIMS, SSRM and Atom Probe) relative to ion implant process. In this work we...
We observed the unidentified TeV gamma-ray source HESS J1804-216 with CANGAROO-III atmospheric Cerenkov telescopes from May to July in 2006. detected very high energy gamma rays above 600 GeV at 10 sigma level an effective exposure of 76 hr. obtained a differential flux (5.0+/-1.5_{stat}+/-1.6_{sys})\times 10^{-12}(E/1 TeV)^{-\alpha} cm^{-2}s^{-1}TeV^{-1} photon index \alpha 2.69 +/- 0.30_{stat} 0.34_{sys}, which is consistent that H.E.S.S. observation 2004. also confirm extended morphology...
Two types of DD neutron energy spectrometer (NES) are under development for deuterium plasma operation in KSTAR to understand behavior beam ions the plasma. One is based on state-of-the-art nuclear emulsion technique. The other a coincidence detection recoiled proton and scattered caused by an elastic scattering incident neutron, which called associated particle counting-NES. prototype NES systems were installed at J-port 2012. During 2012 2013 experimental campaigns, multiple...
As inverter circuits are applied to various applications, the required performance and expected lifetime of have varied. This study focuses on relationship between gate voltage power metal-oxide-semiconductor–field-effect transistors (MOSFETs) their long-term reliability. By applying these features, it is proposed a high-performance driving method for MOSFETs in intended short-lifetime, applications. paper theoretically shows MOSFET voltage. It also that both conduction loss switching can be...
A 0.18-/spl mu/m system LSI embedded ferroelectric memory (FeRAM) operating at a very low voltage has been developed for the first time. The low-voltage operation attained by newly stacked capacitors completely encapsulated hydrogen barriers, which enable us to eliminate reduction of thin film during back end line process including FSG, tungsten CVD (W-CVD), and plasma SiN (p-SiN) passivation. fabricated 1-Mbit one-transistor one-capacitor SrBi/sub 2/(Ta/sub x/Nb/sub 1-x/)/sub 2/O/sub 9/...
We have developed a compact fast neutron camera based on stack of nuclear emulsion plates and pinhole collimator. The was installed at J-port Korea superconducting tokamak advanced research National Fusion Research Institute, Republic Korea. Fast images agreed better with calculated ones Monte Carlo simulation using the uniform distribution Deuterium-Deuterium (DD) source in torus 40 cm radius.
This paper proposes a gate drive circuit with an in situ condition monitoring system for detecting the oxide degradation of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). Trapped charges can cause fluctuations on-resistance and threshold voltages. These phenomena degrade long-term reliability power conversion circuits. The proposed detects by measuring input capacitance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In order to measure the 2.5 MeV neutrons produced by DD nuclear fusion reactions, we have developed a compact neutron detector based on emulsion. After optimization of development conditions, evaluated response an accelerator-based source. The absolute efficiency at energy was estimated be (4.1±0.2)×10-6 tracks/neutron.
Ferroelectric nonvolatile memory (FeRAM) technology using thin films of a bismuth layer-structured ferroelectric material (also known as "Y-1") is presented. The exemplified Y-1 FeRAM exhibits excellent characteristics with regard to data transfer rate, operating voltages, etc., which cannot be achieved by other memories such EEPROMs and FLASH. Preparation characterization capacitors are also described, reveal seems promising candidate for applications because its fatigue-free behaviour.
This paper discusses the influences of common source inductance in power converter circuits. Common is source-side inside a module, and it shares circuit parameters with both gate drive circuit. Therefore, will influence switching characteristics module. No has yet addressed relationship between such as surge voltage loss. In order to improve during turn-off operations, this presents design procedure respect inductance. addition, experimental results rated at 500V, 40A are shown.
We report the detection, with CANGAROO-III imaging atmospheric Cherenkov telescope array, of a very high energy gamma-ray signal from unidentified source HESS J1614-518, which was discovered in H.E.S.S. Galactic plane survey. Diffuse emission detected above 760 GeV at 8.9 sigma level during an effective exposure 54 hr 2008 May to August. The spectrum can be represented by power-law: 8.2+-2.2_{stat}+-2.5_{sys}x10^{-12}x (E/1TeV)^{-Gamma} cm^{-2} s^{-1} TeV^{-1} photon index Gamma...
We have successfully developed a 0.18 /spl mu/m SBT-based 1 Mbit embedded FeRAM, which operates at very low voltage of 1.1 V and ensures the data retention time up to 1000 hours 125/spl deg/C. The operation high reliability characteristics FeRAM are first demonstration our knowledge. These excellent been attained by newly completely encapsulated hydrogen barriers.