A5018045983- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- ZnO doping and properties
- Near-Field Optical Microscopy
- Force Microscopy Techniques and Applications
- Advanced Battery Materials and Technologies
- Mechanical and Optical Resonators
- Carbon Nanotubes in Composites
- 2D Materials and Applications
- Semiconductor Quantum Structures and Devices
- Advanced Materials and Mechanics
- Thermal Radiation and Cooling Technologies
- Advanced materials and composites
- Injection Molding Process and Properties
- Synthesis and Biological Activity
- Superconducting and THz Device Technology
- MXene and MAX Phase Materials
- Graphene research and applications
- Phytochemical Studies and Bioactivities
- nanoparticles nucleation surface interactions
- Supercapacitor Materials and Fabrication
- Advanced MEMS and NEMS Technologies
- Boron and Carbon Nanomaterials Research
University of Science and Technology of China
2021-2024
Suzhou Institute of Nano-tech and Nano-bionics
2018-2024
Chinese Academy of Sciences
2018-2024
Nanopolis Suzhou (China)
2023
Guangxi University of Chinese Medicine
2021
Suzhou University of Science and Technology
2021
Abstract Silicon‐based anodes with high theoretical capacity have intriguing potential applications for next‐generation high‐energy lithium‐ion batteries, but suffer from huge volumetric change that causes pulverization of electrodes. Rational design and construction effective electrode structures combined versatile binders remain a significant challenge. Here, unique natural binder konjac glucomannan (KGM) is developed an amorphous protective layer SiO 2 fabricated on the surface Si...
We report a sub-terahertz scattering-type scanning near-field microscope (sub-THz s-SNOM) which uses 6 mm long metallic tip driven by quartz tuning fork as the probe. Under continuous-wave illumination 94 GHz Gunn diode oscillator, terahertz images are obtained demodulating scattered wave at both fundamental and second harmonic of oscillation frequency together with atomic-force-microscope (AFM) image. The image gold grating period 2.3 µm modulation agrees well AFM experimental relationship...
The exceptional performance of GaN semiconductors in lasers, wireless communication, and energy storage systems makes them crucial for future multi-functional devices. However, during the polishing wafers, abrasive particles can induce subsurface damage, compromising device performance. This study investigates dislocation loops single crystal to understand nucleation glide under external stress. Using nanoindentation compressive stress, we confirmed multiple slip system activation via...
AlGaN is an important material for deep ultraviolet optoelectronic devices and electronic devices. The phase separation on the surface means small-scale compositional fluctuations of Al, which prone to degrade performance In order study mechanism separation, Al0.3Ga0.7N wafer was investigated by scanning diffusion microscopy method based photo-assisted Kelvin force probe microscope. response photovoltage near bandgap quite different edge center island surface. We utilize theoretical model...
Abstract This study utilized nanoindentation to perform nano-mechanical tests on freestanding aluminum nitride (AlN) single crystal substrates with (0002), (10-10), and (11-20) orientations prepared by the Physical Vapor Transport (PVT) method varying indentation depths. The results indicate that c-plane exhibits greater hardness smaller Young's modulus compared other orientations. Moreover, mechanical properties of AlN different demonstrate consistency size effect, showing a decrease in...
Abstract To change the binary structure of nanotube and array in vertically aligned carbon arrays, this work deposits regularly arranged amorphous alumina sheets on classical growth catalyst (10 nm‐thick 2 iron) obtains an similar to Medusa head. Subsequent experiments revealed that these show both unstable stable qualities during growth: they thermally deform their newly discovered characteristics blocking source diffusion, which regulates order specific areas; withstand deformation caused...
We study the oscillatory behavior of qPlus sensors with a long tilted tip by means finite element simulations. The vibration modes sensor are quite different from those cantilever short tip. Flexural tungsten will occur. can no longer be considered as rigid body that moves prong tuning fork. Instead, it oscillates both horizontally and vertically. characteristics sizes were studied. An optimized size was derived obtained values amplitude, ratio between vertical lateral amplitude components,...
The anticancer effects of rosmarinic acid (RA) are a hotspot current research. In order to enhance its pharmacological activity, N-substituted RA was prepared, and it has been shown exhibit notable antitumor effects. elucidate the underlying mechanisms action, pharmacokinetic analysis is necessary. present study, liquid chromatography-tandem mass spectrometric method, used determine concentrations analog, (E)-3-(3,4-dihydroxyphenyl)-2-(3-(3,4-dihydroxyphenyl)acrylamido)propanoic (A2) in...
Abstract For anisotropic materials, the pseudo-dielectric function (DF) from isotropic model is often applied in spectroscopic ellipsometry data analysis instead of DF because its simplicity. Whether this approximation applicable depends on discrepancy between pseudo-DF and DF, which we find to be related illumination configuration greatly. spectra obtained a non-polar freestanding GaN two configurations with c -axis perpendicular parallel incident plane respectively, both are used compare...
Carrier diffusion properties, including the length, coefficient, and carrier lifetime are important for photonic devices. In nitride semiconductors, there many microscopic structures, which have a strong influence on diffusion. this paper, method based photo-assisted Kelvin-probe force microscope confocal time-resolved photoluminescence spectrum at same position is developed to map simultaneously topography nanoscale vertical semiconductor surface. On surface without any dislocations, hole...
The strong polarization effects and abundant surface states in III-nitrides result a tunable electric field, modifying the absorption/emission by changing band structure. Thus, mechanism of field is crucial for future optical logic devices. Here, we propose to extract information from edge numerical simulations. simulations show that increase strength would red-shift spectrum as well decrease slope both uniform non-uniform field. For simulations, also provide lower limit quantum be simulated...
Composite Ti(C,N) based cermets with hybrid microstructure was developed in this article, the mechanical properties and crack resistance of were investigated. consist composite hard phase matrix. The have higher fracture toughness, WC also added into cermet order to improve transverse rupture strength. high due pull-out effect coarse as well deflection, branch, bridge microcracks induced by structure.