A bifunctional conjugated organic molecule 4-(aminomethyl) benzoic acid hydroiodide (AB) is designed and employed as an cation in organic-inorganic halide perovskite materials. Compared with the monofunctional benzylamine (BA) nonconjugated 5-ammonium valeric acid, devices based on AB-MAPbI3 show a good stability superior power conversion efficiency of 15.6% short-circuit current 23.4 mA cm-2 , open-circuit voltage 0.94 V, fill factor 0.71. The not only benefits growth crystals mesoporous...

Two-dimensional (2D) heterostructures have aroused widespread attentions due to the fascinating properties originating from interfaces and derived potential applications in modern electronics optoelectronics. The interfacial band alignment engineering of 2D would open up promising routes toward flexible design optimization electronic optoelectronic properties. Herein, we report a one-step chemical vapor deposition method for growth continuously modulated WS2–WS2(1–x)Se2x (0 < x ≤ 1)...

Abstract Silicon‐based anodes with high theoretical capacity have intriguing potential applications for next‐generation high‐energy lithium‐ion batteries, but suffer from huge volumetric change that causes pulverization of electrodes. Rational design and construction effective electrode structures combined versatile binders remain a significant challenge. Here, unique natural binder konjac glucomannan (KGM) is developed an amorphous protective layer SiO 2 fabricated on the surface Si...

Metal halide perovskite nanostructures hold great promises as nanoscale light sources for integrated photonics due to their excellent optoelectronic properties. However, it remains a challenge fabricate nanodevices using traditional lithographic methods because the perovskites can be dissolved in polar solvents that are required device fabrication process. Herein, we report single CsPbBr3 nanoplate electroluminescence (EL) devices fabricated by directly growing nanoplates on prepatterned...

The electrochemical mechanism of nanocrystalline silicon anode in sodium ion batteries is first studied via operando Raman and X-ray diffraction. An irreversible structural conversion from crystalline to amorphous takes place during the initial cycles, leading ultrafast reversible insertion newly generated silicon. Furthermore, an optimized silicon/carbon composite has been developed further improve its performance.

Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial future applications. Here, we report theoretical model to describe at interface graphene semiconductors based on conventional theory floating Fermi level graphene. The contact barrier heights can estimated through this close values obtained from experiments, which are lower than those...

Organic-inorganic halide perovskites have emerged as excellent candidates for low-cost photovoltaics and optoelectronics. While the predominant recent trend in designing efficient stable solar cells has been to mix different A-site cations, role of cations is still limited tune lattice bandgap perovskites. Herein we compare optoelectronic properties acetamidinum (Ace) guanidinium (Gua) mixed methylammonium lead iodide shed a light on hidden cation carrier mobility mixed-cation The do not...

Strong-field-enhanced spectroscopy in a hybrid dipole resonance system composed of low-loss semiconductor nanoparticle and metal film is proposed demonstrated. This Si on silver featuring extraordinary near-field enhancement large field confinement. Extensive numerical calculations are carried out to investigate the influence gap size, particle diameter, substrate response particle–metal order properly model their hybridization. Our analysis reveals that this originates from strong magnetic...

Understanding the contact properties of graphene on semiconductors is crucial to improving performance optoelectronic devices. Here, we show that when in with a semiconductor, charge carrier transport into leads self-adaptive shift Fermi level, which tends lower barrier heights both n- and p-type semiconductors. A theoretical model presented describe mechanism quantitatively estimate heights. These results can benefit recent topical approaches for integration various semiconductor

Metal halide perovskite nanostructures have recently been the focus of intense research due to their exceptional optoelectronic properties and potential applications in integrated photonics devices. Charge transport nanostructure is a crucial process that defines efficiency devices but still requires deep understanding. Herein, we report study charge transport, particularly drift minority carrier both all-inorganic CsPbBr3 organic–inorganic hybrid CH3NH3PbBr3 nanoplates by electric field...

Abstract Layered semiconductor heterostructures are essential elements in modern electronic and optoelectronic devices. Dynamically engineering the composition of these may enable flexible design properties heterostructure‐based electronics optoelectronics as well their optimization. Here, we report for first time a two‐step chemical vapor deposition approach series WS 2(1 − x ) Se 2 /SnS vertical with high‐quality large areas. The steady‐state photoluminescence results exhibit an obvious...

Sidewall defects play a key role in determining the efficiency of GaN-based micro-light emitting diodes (LEDs) for next generation display applications, but there still lacks direct observation defects-related recombination at affected area. In this Letter, we proposed technique to investigate mechanism and size effect sidewall GaN blue micro-LEDs. The results show that mesa etching will produce stress release near sidewall, which can reduce quantum confinement Stark (QCSE) improve radiative...

The chloride ion is widely used to improve the morphology and crystallization of perovskite film, but its influence on pathway still unclear. Here, Cl-assisted in mesoporous metal oxides unveiled by situ grazing incidence wide-angle X-ray scattering. characterizations suggest that Cl– ions can effectively delay formation intermediate MA2Pb3I8·2DMSO shorten existence time, promote conversion perovskite, ultimately significantly crystallinity mesoscopic structure. photoelectric properties...

Abstract Measurements are presented of the current‐voltage ( I – V ) characteristics individual thiol‐tethered porphyrin molecules (isolated in an alkanethiol matrix) and self‐assembled monolayers. In both cases, it is found that / 2 displays a minimum at characteristic “transition voltage” m . Repeated measurements transition voltage enable its time development statistical behavior to be determined. For isolated molecules, shows multipeaked distribution values, indicating presence small...

Printable mesoscopic perovskite solar cells (PMPSCs) have exhibited great attractive prospects in the energy conversion field due to their high stability and potential scalability. However, thick film mesoporous layers challenges charge transportation increase grain boundary defects, limiting performance of PMPSCs. It is critical not only improve electric property but also passivate traps device performance. Herein we synthesized a bis-adduct 2,5-(dimethyl ester) C60 fulleropyrrolidine...

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. local I–V results show that some the act as high-conductive channels and exhibiting behaviors compared flat regions Schottky characteristics. We have studied effects using density-functional-theory calculations. It is standing folded zigzag armchair directions a tendency to decrease increase work function, respectively, pushing...

Hierarchical nanovesicle-like hollow microspheres are employed to fabricate flexible pressure sensors for detecting micro-vibration signals in non-contacting mode.

We introduce a setup and method to produce gold tips that are suitable for tip-enhanced Raman spectroscopy by using single step constant current electrochemical etch. The etching process is fully automated with only three preset parameters: the current, reference voltage immersed length of wires. By optimizing these parameters, reproducible high quality smooth surface radius curvature about 20 nm can be formed. Tips prepared this were examined experiments on samples single-wall carbon...

The local carrier properties, including minority diffusion lengths and surface recombination velocities, were measured at single thread dislocations in GaN film by a combination of photovoltage spectroscopy Kelvin probe force microscopy. introduced nanoindentation observed as V-pits, where the was lower than that on plane under ultra-violet illumination. A model is proposed to fit spatially resolved curves. Compared with those surface, hole length 90 nm shorter electron velocity 1.6 times...

The propagation properties of surface acoustic waves (SAWs) in semi-insulating Fe-doped GaN films grown on sapphire substrates by hydride vapor phase epitaxy are investigated. Compared with native n-type GaN, exhibits a higher electromechanical coupling coefficient due to its high electrical resistivity. In addition, guided longitudinal leaky wave (LLSAW) was observed experimentally very velocity (about 7890 m/s), and this mode verified numerical simulations. small attenuation LLSAW along...

Using scanning tunnelling microscopy (STM), we have studied mixed self-assembled monolayers of linear alkanethiol molecules. Nonanedithiol (C9S2), nonanethiol (C9S), decanethiol (C10S), and dodecanethiol (C12S) were inserted into a octanethiol (C8S) host matrix monolayer on an Au(111) surface using two-step method. Quasi-one-dimensional double-row structures found in the ordered, close-packed domains C8S for each system. These coexist with ordered striped phase (for C9S C10S) or disordered...

AlGaN is an important material for deep ultraviolet optoelectronic devices and electronic devices. The phase separation on the surface means small-scale compositional fluctuations of Al, which prone to degrade performance In order study mechanism separation, Al0.3Ga0.7N wafer was investigated by scanning diffusion microscopy method based photo-assisted Kelvin force probe microscope. response photovoltage near bandgap quite different edge center island surface. We utilize theoretical model...

Semiconductor heterostructures are basic building blocks for modern electronics and optoelectronics. However, it still remains a great challenge to combine different semiconductor materials in single nanostructures with tailored geometry chemical composition. Here, polar-induced selective epitaxial growth method is reported alternately grow CdS xSe1- x heterostructure nanoribbons (NRs) side by the lateral direction, heterointerface (junction) number be well controlled. Transmission electron...