A5100387886- GaN-based semiconductor devices and materials
- Astronomy and Astrophysical Research
- Nanowire Synthesis and Applications
- Thermal Radiation and Cooling Technologies
- Semiconductor materials and devices
- nanoparticles nucleation surface interactions
- History and Developments in Astronomy
- Astronomical Observations and Instrumentation
Chinese Academy of Sciences
2023
AlGaN is an important material for deep ultraviolet optoelectronic devices and electronic devices. The phase separation on the surface means small-scale compositional fluctuations of Al, which prone to degrade performance In order study mechanism separation, Al0.3Ga0.7N wafer was investigated by scanning diffusion microscopy method based photo-assisted Kelvin force probe microscope. response photovoltage near bandgap quite different edge center island surface. We utilize theoretical model...
AlGaN is a key material for deep ultraviolet optoelectronic and electronic devices. With the increase of Al composition ratio, phase separation on surface, caused by small-scale compositional fluctuations, prone to affecting performance device. In order explore mechanism nanoscale, wafers with different quantities compositions are investigated confocal photoluminescence spectroscopy single-pass Kelvin force probe microscopy. The ratios three samples about 0.3, 0.5, 0.7, respectively....