A5065788064- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Atomic and Subatomic Physics Research
- Quantum optics and atomic interactions
- Advanced Fiber Laser Technologies
- Advanced Frequency and Time Standards
- Cold Atom Physics and Bose-Einstein Condensates
- Laser Material Processing Techniques
- Spectroscopy and Laser Applications
- Photoacoustic and Ultrasonic Imaging
- Semiconductor Quantum Structures and Devices
- Photonic Crystals and Applications
- Advanced Photonic Communication Systems
- Mechanical and Optical Resonators
- Advanced MEMS and NEMS Technologies
- Optical Coatings and Gratings
- Semiconductor materials and interfaces
- GaN-based semiconductor devices and materials
- Silicon and Solar Cell Technologies
- Optical Network Technologies
- Ultrasonics and Acoustic Wave Propagation
- Neural Networks and Reservoir Computing
- Laser Design and Applications
- Molecular Junctions and Nanostructures
University of Glasgow
2018-2024
The field of silicon photonics has experienced widespread adoption in the datacoms industry over past decade, with a plethora other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable artificial intelligence. As result this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access process lines, enabling mass production systems. On side spectrum, several research labs, typically...
A distributed feedback GaAs-based semiconductor laser with a laterally coupled grating is demonstrated at wavelength of 780.24 nm up to 60 mW power. mode expander and aluminum-free active layers have been used reduce the linewidth 612 kHz while maintaining high output The demonstrates over 40 dB side-mode suppression ratio >0.3nm tuning suitable for atom cooling experiments D2 87Rb atomic transition. This has substantial potential be integrated into miniaturized cold systems.
A chirped-coupling sidewall Bragg grating is proposed to mitigate the nonlinear effects that deteriorate linewidth in DFB lasers operating at a high power and current regime. This novel geometry analyzed simulated extract optimal design parameters terms of intra-cavity field distribution. Compared with uniform gratings, devices fabricated are shown operate stable single mode operation over wider range exhibit as narrow 100 kHz.
We present an electroabsorption modulated laser based on identical epitaxial scheme, side-wall grating, on- chip microwave probe interface, and a new low-permittivity planarization method. The modulation speed is significantly increased by reducing the electrode capacitance planarizing with 5-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>-thick HSQ layer. Furthermore, implementing direct ground-signal-ground interface provides straightforward...
The design, fabrication and characterisation of a silicon nitride optical phased array (OPA) for waveguide integration with flip-chip bonded rubidium (Rb) atomic MEMS vapour cells are demonstrated. A one-dimensional OPA symmetric splitter tree design at 780 nm wavelength is fabricated by electron-beam lithography plasma dry-etching. waveguides were cladded dioxide before bonding to an Rb cell. was performed end-fire coupling 780.24 laser the lens fibre. saturated absorption spectroscopy...
A new epitaxial layer design with a double mode expander layer, high refractive index claddings, and an aluminum-free active area has been used to demonstrate distributed feedback lasers operating at 778.1 nm wavelength reduced Lorentzian linewidth aimed miniature atomic clock applications. The also reduces the vertical beam divergence improve modal matching optical fibers as well maintain power output reduce emission linewidth. single-mode operation over 35 dB side-mode suppression ratio,...
Distributed feedback lasers at 778.1 nm wavelength demonstrate 48 mW output, 20.5º vertical divergence, –150 dBc/Hz intensity noise, and 3.67 kHz Lorentzian linewidth. Such devices successfully resolved the 85 Rb two-photon hyperfine levels in free-running conditions.
We present the development of a silicon-nitride photonic integrated circuit platform aimed at range miniature atomic systems including clocks and cold atom sensors which includes narrow-linewidth (≤3.7 kHz) distributed feedback lasers wafer-bonded MEMS rubidium vapour cells.
Distributed feedback (DFB) lasers have been realized emitting at a wavelength of 780.24 nm which demonstrate powers in excess 60 mW with 612 kHz linewidth for use rubidium ( 87 Rb) cold atom systems.
We present a new electro-absorption modulated laser based on lumped configuration, identical epitaxial layer scheme, and low-permittivity planarization method. The design of the device is intended to offer high modulation frequency using simple cheap fabrication process. A thick-film HSQ spin-on coating was used planarize enable low capacitance contact p-side. 6-μm-thick planarized fabricated implement electrode electroabsorption modulator.
There is an ever-growing need for compact sources which can be used the cooling process in high accuracy atomic clocks. Current systems make use of large, expensive lasers are power-hungry and often require frequency doubling order to hit required wavelengths. Distributed feedback (DFB) have been fabricated at a number key wavelengths would allow chip scale devices with very become reality. Two transitions analysed here <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Distributed feedback (DFB) lasers have been demonstrated at 778.1 nm wavelength with 48 mW output power, 20.5° vertical divergence, −150 dBc/Hz relative intensity noise (RIN), and linewidth of 3.67 kHz. Such devices were employed to successfully resolve the <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">87</sup> Rb two-photon hyperfine levels in free-running conditions.
GaAs/AlGaAs Distributed Feedback Semiconductor (DFB) lasers with laterally-coupled gratings are demonstrated at 778.1 nm wavelength output powers up to 48 mW, over 35 dB side-mode suppression ratios, tuning ranges of 0.8 nm, and vertical beam divergences 20.5. An asymmetrical mode expander aluminum-free active layers have been used in the material epilayer reduce linewidth 3.67 kHz relative intensity noise (RIN) –140 dBc/Hz while maintaining high powers. The fabricated demonstrate...
The growing interest in quantum technology applications such as laser cooling and sensing has generated a large demand for narrow linewidth high-power sources the visible near-infrared wavelength emission range. Semiconductor lasers are ideal candidates developing these they combine low cost low-power consumption with small size unparalleled potential integration. This work presents experimental results on two complementary design strategies that can be effectively used to reduce Distributed...