Xiaoyang Ji

ORCID: 0000-0002-7263-7014
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About
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Research Areas
  • Advancements in Battery Materials
  • Thermal properties of materials
  • Advanced Battery Materials and Technologies
  • Adhesion, Friction, and Surface Interactions
  • Advanced Battery Technologies Research
  • Diamond and Carbon-based Materials Research
  • Advanced Surface Polishing Techniques
  • Thermal Radiation and Cooling Technologies
  • Microwave Engineering and Waveguides
  • Graphene research and applications
  • Ga2O3 and related materials
  • Full-Duplex Wireless Communications
  • Solid-state spectroscopy and crystallography
  • Fiber-reinforced polymer composites
  • Antenna Design and Analysis
  • Advanced Antenna and Metasurface Technologies
  • Ferroelectric and Piezoelectric Materials
  • Thermography and Photoacoustic Techniques
  • Acoustic Wave Resonator Technologies
  • MXene and MAX Phase Materials
  • Advanced Thermoelectric Materials and Devices
  • Thermal Expansion and Ionic Conductivity
  • Copper Interconnects and Reliability
  • Semiconductor materials and devices
  • Supercapacitor Materials and Fabrication

Quality and Reliability (Greece)
2025

University of Bristol
2025

University of Illinois Urbana-Champaign
2021-2024

East China Normal University
2018

University of Science and Technology of China
2016

The increasing resistance of copper (Cu) interconnects for decreasing dimensions is a major challenge in continued downscaling integrated circuits beyond the 7 nm technology node as it leads to unacceptable signal delays and power consumption computing. resistivity Cu increases due electron scattering at surfaces grain boundaries nanoscale. Topological semimetals, owing their topologically protected surface states suppressed backscattering, are promising candidates potentially replace...

10.1002/adma.202208965 article EN Advanced Materials 2023-02-06

Abstract Thermal management in Li‐ion batteries is critical for their safety, reliability, and performance. Understanding the thermal conductivity of battery materials crucial controlling temperature distribution batteries. This work provides systemic quantitative measurements three important classes solid electrolytes (SEs) over range 150 < T 350 K. Studies include oxides Li 1.5 Al 0.5 Ge (PO 4 ) 3 6.4 La Zr 1.4 Ta 0.6 O 12 , sulfides 2 S–P S 5 6 PS Cl, Na halides InCl YCl ....

10.1002/smll.202101693 article EN Small 2021-06-12

Thermal management is the main technological challenge for next generation electronic devices. Recently, several groups successfully demonstrated boron arsenide (BAs) microcrystals with an ultrahigh thermal conductivity approaching that of diamond. The development scalable epitaxial BAs growth techniques urgently required to enable a transition material real applications. We have grown layers on 3C-SiC/Si and sapphire substrates over wide temperature range using molecular beam epitaxy (MBE)....

10.1116/6.0004383 article EN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2025-04-07

Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced characterization techniques that can visualize conductance across buried interfaces, nonmetal-nonmetal are still under development. This work reports a dual-modulation-frequency time-domain thermoreflectance (TDTR) mapping technique (1.61 and 9.3 MHz) to conduction...

10.1021/acsami.1c06212 article EN ACS Applied Materials & Interfaces 2021-06-30

Techniques for quantitatively characterizing electrode composition are crucial comprehending battery degradation. However, these methods typically destructive and lack sensitivity to light elements like lithium hydrogen. In our study, we utilize non-destructive ion beam analysis techniques determine the accumulation depth profiles of trapped solid electrolyte interphase (SEI) components during cycling electrodeposited silicon thin film anodes (EDEP-Si, ∼300 nm). Our quantitative findings...

10.1016/j.jpowsour.2024.235039 article EN cc-by-nc Journal of Power Sources 2024-07-16

GaN high electron mobility transistors (HEMTs) on SiC substrates are the highest performing commercially available for high-power, high-frequency applications. However, Joule self-heating limits maximum areal power density, i.e., operating is derated to ensure lifetime of GaN-based devices. Diamond attractive as a heat sink due its record-high thermal conductivity combined with electrical resistivity. GaN-on-diamond devices have been demonstrated, bringing diamond close possible active...

10.1021/acsaelm.5c00119 article EN cc-by ACS Applied Electronic Materials 2025-03-27

Abstract Overheating has emerged as a primary challenge constraining the reliability and performance of next‐generation high‐performance (ultra)wide bandgap (WBG or UWBG) electronics. Advanced heterogeneous bonding high‐thermal‐conductivity WBG thin films substrates not only constitutes pivotal technique for fabricating these electronics but also offers potential solutions thermal management. This study presents integration 3C‐silicon carbide (SiC) diamond through surface‐activated...

10.1002/aelm.202400387 article EN cc-by Advanced Electronic Materials 2024-10-14

Silicon carbide silicon (SiC SiC) composites are often used in oxidizing environments at high temperatures. Measurements of the thermal conductance oxide layer provide a way to better understand oxidation process with spatial resolution. We use time domain thermoreflectance (TDTR) map and conductivity SiC composite resolution 3 {\mu}m. Heterodyne detection using 50 kHz modulated probe beam 10 MHz pump suppresses coherent pick-up enables faster data acquisition than what has previously been...

10.1111/jace.17873 article EN Journal of the American Ceramic Society 2021-04-23

In this paper, a novel planar bandpass filter with wide stopband suppression is proposed based on the combination of coplanar waveguide (CPW) and substrate integrated wave-guide (SIW) technologies. The achieved by eliminating second harmonic resonance CPW cavity centrally positioned metallic via, which plays key role in design. could obtain good out-of-band rejection (<;-20 dB) from 18 GHz (1.5 f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/ieee-iws.2018.8400816 article EN 2018 IEEE MTT-S International Wireless Symposium (IWS) 2018-05-01

We demonstrate unseeded lateral overgrowth of nanocrystalline diamond as a way increasing the thermal conductivity thin layers diamond. The technique can be used growing on top semiconductors, creating layer high in direct contact with semiconductors and allowing for encasement GaN

10.1149/11307.0015ecst article EN ECS Transactions 2024-05-17

Overheating has emerged as a primary challenge constraining the reliability and performance of next-generation high-performance electronics, such chiplets (ultra)wide bandgap electronics. Advanced heterogeneous integration not only constitutes pivotal technique for fabricating these electronics but also offers potential solutions thermal management. This study presents high conductivity semiconductors, specifically, 3C-SiC thin films diamond substrates, through room-temperature...

10.48550/arxiv.2404.09120 preprint EN arXiv (Cornell University) 2024-04-13

We demonstrate diamond lateral overgrowth as a way of increasing the thermal conductivity thin layers diamond. The technique can be used growing on top semiconductors, creating layer high in direct contact with semiconductors and allowing for encasement GaN As we move to higher power densities, requirements heat removal become extreme. best passive remove from semiconductor is have spreader near source. Having under substrate good. epi better having bottom still. As-grown non-diamond...

10.1149/ma2024-01321567mtgabs article EN Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) 2024-08-09

This paper proposes a novel circularly polarized (CP) substrate integrated dielectric resonator antenna (SIDRA). It is fed by half-mode waveguide (HMSIW) through pair of cross-slots. The feeding HMSIW and radiator the proposed SIDRA can be fully together based on simple printed circuit board (PCB) technology. has merits low profile, cost, high efficiency, easy integration.

10.1109/usnc-ursi.2018.8602794 article EN 2018-07-01

Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced characterization techniques which can visualize conductance across buried interfaces, nonmetal-nonmetal are still under development. This work reports a dual-modulation-frequency TDTR mapping technique to conduction semiconductor beta-Ga2O3-SiC samples. Both beta-Ga2O3...

10.48550/arxiv.2103.08084 preprint EN other-oa arXiv (Cornell University) 2021-01-01

Management of heat during charging and discharging Li-ion batteries is critical for their safety, reliability, performance. Understanding the thermal conductivity materials comprising crucial controlling temperature distribution in batteries. This work provides systemic quantitative measurements three important classes solid electrolytes (oxides, sulfides, halides) over range 150-350 K. Studies include oxides Li1.5Al0.5Ge1.5(PO4)3 Li6.4La3Zr1.4Ta0.6O12, sulfides Li2S-P2S5, Li6PS5Cl, Na3PS4,...

10.48550/arxiv.2103.08718 preprint EN other-oa arXiv (Cornell University) 2021-01-01

The reversible heat in lithium-ion batteries (LIBs) due to entropy change is fundamentally important for understanding the chemical reactions LIBs and developing proper thermal management strategies. However, direct measurements of are challenging limited temperature resolution applied thermometry. In this work, by an ultra-sensitive thermometry with a differential AC bridge using two thermistors, noise-equivalent we achieve (10 uK) several orders magnitude higher than previous on LIBs. We...

10.48550/arxiv.2107.00625 preprint EN other-oa arXiv (Cornell University) 2021-01-01
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