A5090266874- 3D IC and TSV technologies
- Electronic Packaging and Soldering Technologies
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Advanced ceramic materials synthesis
- Thermal properties of materials
- ZnO doping and properties
- Synthesis and properties of polymers
- Nanomaterials and Printing Technologies
- Graphene research and applications
- Metal and Thin Film Mechanics
- Advancements in Semiconductor Devices and Circuit Design
- Nanofabrication and Lithography Techniques
- Injection Molding Process and Properties
- Thin-Film Transistor Technologies
- Electronic and Structural Properties of Oxides
- Additive Manufacturing and 3D Printing Technologies
- Advanced Surface Polishing Techniques
- Advanced Photocatalysis Techniques
- Advancements in Battery Materials
- Copper Interconnects and Reliability
- Advanced MEMS and NEMS Technologies
- Supercapacitor Materials and Fabrication
Institute of Microelectronics
2021-2024
Chinese Academy of Sciences
2020-2024
The University of Tokyo
2014-2023
Meisei University
2019-2021
Waseda University
2019-2021
Shanghai Institute of Microsystem and Information Technology
2020
Tianjin Research Institute of Electric Science (China)
2020
ShanghaiTech University
2020
University of Chinese Academy of Sciences
2020
Chalmers University of Technology
2020
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power high-frequency electronics applications, such as wireless communication radar systems. However, the performance reliability of GaN-based high-electron-mobility transistors (HEMTs) are limited by channel temperature induced Joule heating in device channel. Integration with thermal conductivity substrates can improve heat extraction from HEMTs lower operating device....
High-power GaN-based electronics are limited by high channel temperatures induced self-heating, which degrades device performance and reliability. Increasing the thermal boundary conductance (TBC) between GaN SiC will aid in heat dissipation of GaN-on-SiC devices taking advantage conductivity substrates. For typical growth method, there issues concerning transition layer at interface low-quality adjacent to interface, impedes flow. In this work, a room-temperature bonding method is used bond...
The ultrawide band gap, high breakdown electric field, and large-area affordable substrates make β-Ga2O3 promising for applications of next-generation power electronics, while its thermal conductivity is at least 1 order magnitude lower than other wide/ultrawide gap semiconductors. To avoid the degradation device performance reliability induced by localized Joule-heating, proper management strategies are essential, especially high-power high-frequency applications. This work reports a...
Surface-active bonding (SAB) is a promising technique for semiconductors directly bonding. However, the interlayer of interface and reduced layer thickness may affect thermal transport. In this study, temperature-dependent cross-plane conductivity 4H-SiC thin films effective boundary resistance (TBReff) SiC-on-SiC are measured by multiple-probe wavelength nanosecond transient thermoreflectance (MW-TTR). The film exhibits good quantitative agreement with calculation density functional theory...
We for the first time demonstrate heterogeneous integration of 2-inch β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin films onto 4H-SiC and Si (001) substrates by ion-cutting process, as well fabrication high-performance MOSFETs on wafers. single-crystalline film with a wafer-level thickness non-uniformity below ±1.8% is transferred SiC substrates. Three high-quality wafers,...
Graphene-based materials have been extensively investigated in the energy-related applications owing to their unique properties, such as high conductivity and mechanical flexibility. Three-dimensional (3D) graphene architectures could further strengthen performance facilitate energy storage. To fabricate 3D architectures, rapidly developed printing technology presents a lot of advantages has received much research attention. In this paper, we reviewed recent advances graphene-based discussed...
Integrating β-Ga2O3 films onto a highly thermally conductive substrate is regarded as promising method to remove the heat from high-power devices, ultimately increasing their reliability and performance. In this work, we fabricated three wafer-scale heterogeneous integration materials (HIMs), i.e., β-Ga2O3–SiC (GaOSiC), β-Ga2O3–Al2O3–SiC (GaOISiC), β-Ga2O3–Al2O3–Si (GaOISi), by using ion-cutting surface-activated bonding techniques. The block effect of intermediate amorphous Al2O3 layer SiC...
Single-crystal cubic silicon carbide has attracted great attention for MEMS and electronic devices. However, current leakage at the SiC/Si junction high temperatures visible-light absorption of Si substrate are main obstacles hindering use platform in a broad range applications. To solve these bottlenecks, we present new single crystal SiC on an electrically insulating transparent using anodic bonding process. The thin film was prepared 150 mm with surface roughness 7 nm LPCVD. wafer bonded...
High cost of high-purity semi-insulating (HPSI) SiC is a significant barrier to its widespread industrial use as substrate for RF GaN transistors. This study presents cost-effective 6 in. SiC-on-SiC (SOS) composite substrate. novel created by bonding an HPSI-SiC film onto more affordable supporting wafer using smart cut and surface activated technologies. approach not only allows multiple transfers films but also enables the reuse substrate, potentially reducing costs over 60%. The epitaxial...
Lead-based solders bring pollution to the environment and result in health threat humans.The preparation application of metallic nanoparticles provide a potential method develop Pb-free bonding materials.In this article, Ag-coated Cu bulks was realized through low temperature sintering by directly using chemically-reduced Ag nanoparticle paste baked powders at 60 o C, respectively.The results indicate that capillary flow caused ring-like deposit on substrate coating, while phenomenon...
Abstract In this study, the results of direct wafer bonding SiC–SiC at room temperature by standard surface-activated (SAB) and modified SAB with a Si-containing Ar ion beam were compared, in terms energy, interface structure composition, effects rapid thermal annealing (RTA) 1273 K gas. Compared that obtained SAB, is ∼30% stronger almost completely recrystallized without oxidation during RTA, which should be due to situ Si compensation surface activation beam.
Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced characterization techniques that can visualize conductance across buried interfaces, nonmetal-nonmetal are still under development. This work reports a dual-modulation-frequency time-domain thermoreflectance (TDTR) mapping technique (1.61 and 9.3 MHz) to conduction...
The semiconductor, β-Ga2O3 is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap (∼4.9 eV) and large Baliga's figure of merit. However, the thermal conductivity much lower than that other wide/ultra-wide semiconductors, such as SiC GaN, which results deterioration β-Ga2O3-based device performance reliability self-heating. To overcome this problem, a scalable management strategy was proposed by heterogeneously integrating...
We report the characterization of channel mobility properties metal-oxide-semiconductor fieldeffect transistors (MOSFETs) on heterogeneous β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -on-SiC (GaOSiC) substrate fabricated by an ion-cutting process. The GaOSiC MOSFETs is significantly improved as postannealing temperature Ga increases from 900 °C to 1200 °C. transistor annealed...
4H-SiC wafer bonding has been achieved by the modified surface activated (SAB) method without any chemical-clean treatment and high temperature annealing. Strong between SiC wafers with tensile strength greater than 32 MPa was demonstrated at room under 5 kN force for 300 s. Almost entire bonded very well except a small peripheral region few voids. The interface structure analyzed to verify mechanism. It found an amorphous layer existed as intermediate interface. After annealing 1273 K in...
A silicon nitride (SiNx) film deposited at 500 °C by plasma-enhanced atomic layer deposition (PEALD) is employed as the gate dielectric for GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). An interface enhancement technology featuring in situ low-damage NH3/N2 remote plasma pretreatments (RPPs) developed prior to SiNx deposition, which contributes an improved surface morphology while remarkably suppressed oxides. It revealed constant-capacitance...
Heterogeneous integration of compound semiconductors on a Si platform leads to advanced device applications in the field photonics and high frequency electronics. However, unavoidable bubbles formed at bonding interface are detrimental for achieving yield dissimilar semiconductor by direct wafer technology. In this work, lateral outgassing surface trenches (LOTs) introduced efficiently inhibit bubbles. It is found that chemical reactions InP–Si similar those Si–Si bonding, generated gas can...