A5101502709- Multiferroics and related materials
- Magnetic Properties and Synthesis of Ferrites
- Magneto-Optical Properties and Applications
- Magnetic properties of thin films
- Ferroelectric and Piezoelectric Materials
- ZnO doping and properties
- Magnetic Properties and Applications
- Magnetic and transport properties of perovskites and related materials
- Electromagnetic wave absorption materials
- Microwave Dielectric Ceramics Synthesis
- Glass properties and applications
- Acoustic Wave Resonator Technologies
- Nanowire Synthesis and Applications
- Physics of Superconductivity and Magnetism
- Thin-Film Transistor Technologies
- Metallic Glasses and Amorphous Alloys
- Electrocatalysts for Energy Conversion
- Copper-based nanomaterials and applications
- Luminescence Properties of Advanced Materials
- Ga2O3 and related materials
- Metallurgical and Alloy Processes
- Luminescence and Fluorescent Materials
- Surface Roughness and Optical Measurements
- Semiconductor materials and interfaces
- Electrodeposition and Electroless Coatings
University of Science and Technology Beijing
2023
Hangzhou Dianzi University
2011-2020
University of California, Berkeley
2015-2016
Shandong University
2007-2010
State Key Laboratory of Crystal Materials
2008-2009
By synchronizing a microwave waveform with the synchrotron x-ray pulses, we use ferromagnetic resonance (FMR) of Py (Ni81Fe19) layer in Py/Cu/Cu75Mn25/Cu/Co multilayer to pump pure spin current into Cu75Mn25 spacer layer, and then directly probe by time-resolved magnetic circular dichroism (XMCD). This element-specific pump-probe measurement unambiguously identifies AC layer. In addition, phase resolved measurements reveal characteristic bipolar behavior Co spins that is fingerprint...
Co-doped wurtzite ZnO [Zn(1−x)CoxO] thin films have been grown on Al2O3(0001) substrates by using oxygen plasma-assisted molecular beam epitaxy at the low growth temperature of 450°C. The epitaxial Co concentration 0⩽x⩽0.12 are single crystalline, which were examined reflection high energy electron diffraction and x-ray diffraction. Both optical transmission spectrum in situ. photoelectron spectroscopy studies confirmed incorporation Co2+ cations into lattice. Magnetic measurements revealed...
We studied the electrical transport properties of single-crystal epitaxial Co-doped ZnO films grown by molecular-beam epitaxy. Upon increasing temperature, mechanisms changed from hard-gap resistance to Efros variable range hopping. The magnetic field and temperature dependence magnetoresistance revealed that large positive observed in regime originated shrinkage electron wave functions. However, no sign spin-dependent behavior was found.
Abstract Two‐step sintering ( TSS ) process has been used to fabricate hexagonal barium ferrite (BaFe 12 O 19 , BaM) ceramics with high density and fine grain size. The densification, microstructure, magnetic properties were investigated. sample prepared by the first‐step temperature of 1325°C, second‐step 1300°C, holding time 20 hours a 98.01 ± 0.25% theoretical (5.29 g/cm 3 exhibits uniform microstructure small average size (2.92 0.05 μm). In addition, saturation magnetization BaM...
Epitaxial single-crystal Ge1−xMnx ferromagnetic-semiconductor films were fabricated on Ge(001) substrates by molecular beam epitaxy. All the samples are ferromagnetic and have strong magnetic anisotropy indicated different magnetization in plane out of plane. The electrical transport obeys Efros variable range hopping law low temperature range. Interestingly, a negative coefficient ordinary Hall effect p-type carriers was found at temperature. Anomalous Ge0.949Mn0.051 film observed below...
Amorphous Ge1−xMnx magnetic semiconductor films with high Mn concentrations were prepared on liquid-nitrogen (LN2)-cooled glass substrates by ultrahigh vacuum thermal coevaporation. Hysteresis loops measured at 5K show coexistence of ferromagnetism and paramagnetism. The maximum Curie temperature 220K was found in Ge0.48Mn0.52 film. Moreover, exchange bias occurs magnetization hysteresis for samples higher concentrations, which can be explained the antiferromagntic coupling between...
Tailoring the spin orientation at atomic scale has been a key task in spintronics technology. While controlling out-of-plane to in-plane achieved by precise control of perpendicular magnetic anisotropy layer thickness level, design and not yet well developed. On aligned steps 6° vicinal Cu(001) surface with parallel [110] axis, we grow Py/Ni overlayer films epitaxially permit systematic exploration step-induced as function both Py Ni film thicknesses. We found that from induce an uniaxial...
Ge 1 − x Mn / single-crystal heterojunction diodes with p-type Ge1−xMnx ferromagnetic semiconductor were grown, respectively on substrates of p-type, n-type, and intrinsic semiconductors by molecular beam epitaxy. The I-V curve the p-Ge0.95Mn0.05/intrinsic-Ge diode can be greatly tuned a magnetic field, which was indicated large positive magnetoresistance. magnetoresistance shows peak value 700% under +2 V bias voltage around Curie temperature 225 K Ge0.95Mn0.05 semiconductor, it remains as...