Limei Zheng

ORCID: 0000-0003-3676-0549
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About
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Research Areas
  • Ferroelectric and Piezoelectric Materials
  • Acoustic Wave Resonator Technologies
  • Microwave Dielectric Ceramics Synthesis
  • Multiferroics and related materials
  • X-ray Diffraction in Crystallography
  • Crystallization and Solubility Studies
  • Dielectric materials and actuators
  • Crystallography and molecular interactions
  • Advanced Memory and Neural Computing
  • Supramolecular Chemistry and Complexes
  • Molecular Sensors and Ion Detection
  • Ferroelectric and Negative Capacitance Devices
  • Advanced biosensing and bioanalysis techniques
  • Electronic and Structural Properties of Oxides
  • Ultrasonics and Acoustic Wave Propagation
  • Advanced Sensor and Energy Harvesting Materials
  • Photorefractive and Nonlinear Optics
  • Magnetic and transport properties of perovskites and related materials
  • Biosensors and Analytical Detection
  • Ovarian cancer diagnosis and treatment
  • Neural Networks and Reservoir Computing
  • Electrochemical Analysis and Applications
  • Neural dynamics and brain function
  • Medical Research and Treatments
  • Advanced Nanomaterials in Catalysis

Shandong University
2009-2025

State Key Laboratory of Crystal Materials
2006-2025

Zhejiang University
2017-2024

Sir Run Run Shaw Hospital
2017-2024

Zhangzhou Normal University
2023

First Affiliated Hospital of Fujian Medical University
2022

Fujian Medical University
2022

Henan University of Technology
2008-2022

Harbin Institute of Technology
2011-2021

Center for High Pressure Science and Technology Advanced Research
2021

Objective Non-alcoholic fatty liver disease (NAFLD) is the leading cause of end-stage diseases worldwide. Understanding NAFLD prevalence and trends over time at global, regional national levels critical to understanding burden creating more tailored prevention strategies. Design Population-based observational study. Setting The study was including 21 regions 195 countries or territories. Main outcomes measure estimated annual percentage change for prevalence. Results Worldwide, cases have...

10.1136/bmjopen-2019-036663 article EN cc-by-nc BMJ Open 2020-08-01

Abstract Artificial synapses can boost neuromorphic computing to overcome the inherent limitations of von Neumann architecture. As a promising memristor candidate, ferroelectric tunnel junctions (FTJ) enable authors successfully emulate spike‐timing‐dependent synapses. However, nonlinear and asymmetric synaptic weight update under repeated presynaptic stimulation hampers by favoring runaway weights during learning. Here, demonstrate an FTJ whose conductivity varies linearly symmetrically...

10.1002/adfm.202202366 article EN Advanced Functional Materials 2022-06-22

The development of high-performance energy storage materials is decisive for meeting the miniaturization and integration requirements in advanced pulse power capacitors. In this study, we designed [(Bi0.5Na0.5)0.94Ba0.06](1-1.5x)LaxTiO3 (BNT-BT-xLa) lead-free ceramics based on their phase diagram. A strategy combining adjustment domain control via doping was proposed to enhance performance. obtained results showed that La3+ ions doped into BNT-BT improved crystal structure symmetry induced a...

10.1021/acsami.2c01863 article EN ACS Applied Materials & Interfaces 2022-04-25

A large coercive field (EC) and ultrahigh piezoelectricity are essential for ferroelectrics used in high-drive electromechanical applications. The discovery of relaxor-PbTiO3 crystals is a recent breakthrough; they currently afford the highest piezoelectricity, but usually with low EC. Such performance deterioration occurs because high interlinked an easy polarization rotation, subsequently favoring dipole switch under small fields. Therefore, search both EC has become imminent challenge....

10.1038/s41467-022-29962-6 article EN cc-by Nature Communications 2022-05-04

Neuromorphic computing provides alternative hardware architectures with high computational efficiencies and low energy consumption by simulating the working principles of brain artificial neurons synapses as building blocks. This process helps overcome insurmountable speed barrier power from conventional von Neumann computer architectures. Among emerging neuromorphic electronic devices, ferroelectric-based have attracted extensive interest for their good controllability, deterministic...

10.1063/5.0165029 article EN cc-by Applied Physics Letters 2024-01-15

Abstract The advent of big data and the Internet Things has created urgent demands for in‐sensor computing hardware with multimodal perception that can effectively resolve inefficiency, high latency, excessive energy consumption challenges faced by conventional sensory systems. Here, a simple‐structured optoelectronic synaptic device In 2 O 3 ·SnO /Nb:SrTiO (ITO/NSTO) heterostructure is proposed, which vividly demonstrates capabilities. First, ingenious responses under both optical...

10.1002/adfm.202409045 article EN Advanced Functional Materials 2024-08-05

Environmental friendly piezoelectric single crystal, Ta-modified (K,Na)NbO3 with the size of 12 × 11 mm3, has been successfully grown using top seeded solution growth technique. This orthorhombic phase (K,Na)(Nb,Ta)O3 crystal is largest to date in KNN-based crystals homogeneous composition. The large allowed us apply domain engineering technique further enhance its properties. In addition, a self-consistent complete set elastic, dielectric and constants for [001]c poled engineered measured,...

10.1039/c3ce40658j article EN CrystEngComm 2013-01-01

Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low state via conducting filament forming/deforming, while tunnel junctions (FTJs) arises barrier height or width variation polarization reverses between asymmetric electrodes. Here authors demonstrate a coexistence induced BaTiO3...

10.1002/adma.201606165 article EN Advanced Materials 2017-04-25

Abstract Synthetic antiferromagnet (SAF) with high thermal stability, ultra‐fast spin dynamics, and highly efficient spin‐orbit torque switching has great application potential in neuromorphic computing hardware. However, two challenges, the weakening of Hall signal remanent state need for a large auxiliary magnetic field perpendicular magnetization switching, greatly limit advantages SAF computing. In this work, both enhanced anomalous resistance magnetic‐field‐free are achieved by using...

10.1002/adfm.202404679 article EN Advanced Functional Materials 2024-05-25

Lead-free single crystal, (K, Na, Li)(Nb, Ta)O3:Mn, was successfully grown using top-seeded solution growth method. Complete matrix of dielectric, piezoelectric and elastic constants for [001]C poled crystal determined. The coefficient d33 measured by the resonance method 545 pC/N, which is almost three times that its ceramic counterpart. values Berlincourt meter ( [Formula: see text]) strain-field curve were even higher. differences assumed to relate with different extrinsic contributions...

10.1111/jace.13540 article EN Journal of the American Ceramic Society 2015-03-17

Optical temperature sensing based on the variation of fluorescence intensity ratio rare-earth materials has become appealing due to multiple superiorities over electrical sensing. However, confined by largest energy separation two thermally linked levels ions, highest sensitivity such is essentially smaller than 2878/T2, as reported previously from diverse systems. In this work, we demonstrate that ultrahigh-sensitive can be achieved Pr3+-doped (K0.5Na0.5)NbO3 1D2-3H4 emission 3P0-3H4...

10.1063/1.4941669 article EN Applied Physics Letters 2016-02-08

The complete set of material constants single domain rhombohedral phase 0.27Pb(In1/2Nb1/2)O3-0.46Pb(Mg1/3Nb2/3)O3-0.27PbTiO3:Mn crystal has been determined. orientation dependence piezoelectric, dielectric, and electromechanical properties was calculated based on these data. maximum piezoelectric were found to exist near the [001]C pseudo-cubic direction. In addition, poled crystals with “4R” multi-domain configuration experimentally measured compared values. Only a small difference (3%)...

10.1063/1.4821030 article EN Journal of Applied Physics 2013-09-12

Lead-free piezoelectric single crystal 0.95(Na0.5Bi0.5)TiO3 (NBT)-0.05BaTiO3 was grown by top-seeded solution growth method, which has rhombohedral symmetry with composition near morphotropic phase boundary. Full set of dielectric, piezoelectric, and elastic constants for [001]c poled domain-engineered determined. Excellent electromechanical properties low dielectric loss (d33 = 360 pC/N, d31 −113 d15 162 k33 0.720, kt 0.540, tan δ 1.1%) make it a good candidate to replace lead-based...

10.1063/1.4821853 article EN Applied Physics Letters 2013-09-16

Abstract Ferroelastic switching in ferroelectric/multiferroic oxides plays a crucial role determining their dielectric, piezoelectric, and magnetoelectric properties. In thin films of these materials, however, substrate clamping is generally thought to limit the electric-field- or mechanical-force-driven responses local scale. Here, we report mechanical-force-induced large-area, non-local, collective ferroelastic domain PbTiO 3 epitaxial by tuning misfit-strain be near phase boundary wherein...

10.1038/s41467-019-11825-2 article EN cc-by Nature Communications 2019-09-02

Due to its lead-free composition and a unique double polarization hysteresis loop with large maximum (<i>P</i><sub>max</sub>) small remnant (<i>P</i><sub>r</sub>), AgNbO<sub>3</sub>-based antiferroelectrics (AFEs) have attracted extensive research interest for electric energy storage applications. However, low dielectric breakdown field (<i>E</i><sub>b</sub>) limits an density further development. In this work, highly efficient method was proposed fabricate high-energy-density...

10.26599/jac.2023.9220678 article EN cc-by Journal of Advanced Ceramics 2022-12-19

A high quality orthorhombic (K, Na, Li)(Nb, Ta)O3 single crystal with a large size of 9 × 11 mm3 was successfully grown using the top-seeded solution growth method. Its allowed us to perform comprehensive investigation on this crystal. complete set elastic, dielectric and piezoelectric coefficients determined combined resonance ultrasonic methods. The longitudinal coefficient d33 transverse d31 lead-free are as 354 pC N−1 −163 N−1, respectively, which two times higher than those KNN-TL...

10.1039/c4ce01208a article EN CrystEngComm 2014-09-01

Domain pattern variations with temperature were studied by polarizing light microscopy for the morphotropic phase boundary composition $0.67\mathrm{Pb}(\mathrm{M}{\mathrm{g}}_{1/3}\mathrm{N}{\mathrm{b}}_{2/3}){\mathrm{O}}_{3}\ensuremath{-}0.33\mathrm{PbTi}{\mathrm{O}}_{3}$ (PMN-0.33PT) single crystal. At room temperature, monoclinic ${\mathrm{M}}_{\mathrm{A}}$ is dominant in unpoled crystal, which coexists a small fraction of tetragonal (T) phase. The orientation spontaneous polarization was...

10.1103/physrevb.91.184105 article EN publisher-specific-oa Physical Review B 2015-05-08

Abstract Artificial synapses are electronic devices that simulate important functions of biological synapses, and therefore the basic components artificial neural morphological networks for brain-like computing. One most objectives developing is to characteristics as much possible, especially their self-adaptive ability external stimuli. Here, we have successfully developed an synapse with multiple synaptic highly adaptive based on a simple SrTiO 3 /Nb: heterojunction type memristor. Diverse...

10.1088/2752-5724/ace3dc article EN cc-by Materials Futures 2023-07-04

Ferroelectric materials with high mechanical quality factors ${Q}_{m}$ are used in high-power electromechanical devices, but the physical mechanism of enhancement is not well understood. This study uses Rayleigh analysis to quantitatively investigate pinning effect acceptor-doped relaxor ferroelectric crystals. Enhancement longitudinal factor ${Q}_{33}$ attributed restricted polarization rotation, while that shear ${Q}_{15}$ ascribed both rotation and clamped domain-wall motion. insight into...

10.1103/physrevapplied.9.064028 article EN Physical Review Applied 2018-06-19

The engineering of ferroic orders, which involves the evolution atomic structure and local configuration in development next-generation electronic devices. Until now, diverse polarization structures topological domains are obtained ferroelectric thin films or heterostructures, switching subsequent domain nucleation found to be more conducive building energy-efficient multifunctional structures. In this work, a continuous periodic strain flexible freestanding BaTiO

10.1002/advs.202401657 article EN Advanced Science 2024-04-22
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