Xiao Renshaw Wang

ORCID: 0000-0002-5503-9899
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Research Areas
  • Electronic and Structural Properties of Oxides
  • Magnetic and transport properties of perovskites and related materials
  • Advanced Condensed Matter Physics
  • Ferroelectric and Piezoelectric Materials
  • Physics of Superconductivity and Magnetism
  • 2D Materials and Applications
  • Semiconductor materials and devices
  • Multiferroics and related materials
  • Electrocatalysts for Energy Conversion
  • Metamaterials and Metasurfaces Applications
  • Advanced Memory and Neural Computing
  • Magnetic properties of thin films
  • Ferroelectric and Negative Capacitance Devices
  • Perovskite Materials and Applications
  • Augmented Reality Applications
  • Catalytic Processes in Materials Science
  • Plasmonic and Surface Plasmon Research
  • Transition Metal Oxide Nanomaterials
  • Iron-based superconductors research
  • Quantum and electron transport phenomena
  • Advanced battery technologies research
  • Advanced Antenna and Metasurface Technologies
  • Catalysis and Oxidation Reactions
  • Crystallization and Solubility Studies
  • Gas Sensing Nanomaterials and Sensors

Nanyang Technological University
2017-2025

Massachusetts Institute of Technology
2004-2024

Shanghai University
2023

Soochow University
2023

National University of Singapore
2012-2021

Institute of New Materials
2021

Anhui University
2021

Southern University of Science and Technology
2021

Queensland University of Technology
2021

Kunming University of Science and Technology
2021

Electrostatic energy storage technology based on dielectrics is fundamental to advanced electronics and high-power electrical systems. Recently, relaxor ferroelectrics characterized by nanodomains have shown great promise as with high density efficiency. We demonstrate substantial enhancements of properties in ferroelectric films a superparaelectric design. The are scaled down polar clusters several unit cells so that polarization switching hysteresis nearly eliminated while relatively...

10.1126/science.abi7687 article EN Science 2021-09-30

RuO2 catalysts exhibit record activities toward the oxygen evolution reaction (OER), which is crucial to enable efficient and sustainable energy storage. Here we examine OER kinetics on rutile (110), (100), (101), (111) orientations, finding (100) most active. We assess potential involvement of lattice in mechanism with online electrochemical mass spectrometry, showed no evidence exchange these oriented facets acidic or basic electrolytes. Similar results were obtained for polyoriented films...

10.1021/acsenergylett.7b00135 article EN ACS Energy Letters 2017-03-15

Abstract Two-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, need integrated high-quality dielectrics—which are challenging deposit. Here we show that single-crystal strontium titanate—a high- κ perovskite oxide—can two-dimensional using van der Waals forces. Strontium titanate thin films grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide tungsten diselenide make n-type p-type...

10.1038/s41928-022-00753-7 article EN cc-by Nature Electronics 2022-04-25

Abstract The rapid development in information technologies necessitates advancements of their supporting hardware. In particular, new computing paradigms are needed to overcome the bottleneck traditional von Neumann architecture. Bottom‐up innovation, especially at materials and devices level, has potential disrupt existing through emergent phenomena. As a type conceptual device, 2D ferroelectric field‐effect transistor (FeFET) is highly sought after due its integration with modern...

10.1002/adfm.202310438 article EN Advanced Functional Materials 2024-02-01

Oxide heterostructures often exhibit unusual physical properties that are absent in the constituent bulk materials. Here, we report an atomically sharp transition to a ferromagnetic phase when polar antiferromagnetic LaMnO3 (001) films grown on SrTiO3 substrates. For thickness of six unit cells or more, film abruptly becomes over its entire area, which is visualized by scanning superconducting quantum interference device microscopy. The explained terms electronic reconstruction originating...

10.1126/science.aaa5198 article EN Science 2015-08-13

We report the optical, electrical transport, and magnetotransport properties of high quality oxygen deficient SrTiO3 (STO) single crystal film fabricated by pulsed laser deposition reduced in vacuum chamber. The vacancy distribution thin is expected to be uniform. By comparing with bulk STO, it was found that vacancies STO far from uniform over whole material. metal-insulator transition (MIT) observed induced carrier freeze-out effect. low temperature frozen state can re-excited an electric...

10.1103/physrevlett.107.146802 article EN Physical Review Letters 2011-09-28

In this article, we present a comprehensive review on recent research progress in design and fabrication of active tunable metamaterials devices based phase transition VO2. Firstly, introduce mechanisms the metal-to-insulator (MIPT) VO2 investigated by ultrafast THz spectroscopies. By analyzing spectra, evolutions MIPT induced different external excitations are described. The superiorities using as building blocks to construct highly discussed. Subsequently, recently demonstrated...

10.1088/1361-6528/aa9cb1 article EN Nanotechnology 2017-12-12

The observation of a two dimensional electron gas (2DEG) (1, 2), superconductivity (3, 4), magnetic effects (5) and electronic phase separation (6-8) at the interfaces insulating oxides, especially LaAlO3/SrTiO3, has further enhanced potential complex oxides for novel electronics. occurrence 2DEG is strongly believed to be driven by polarization discontinuity (9) interface between oxides. In this scenario, crystal orientation plays an important role no conductivity would expected e.g.,...

10.1038/ncomms2804 article EN cc-by-nc-nd Nature Communications 2013-05-14

Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low state via conducting filament forming/deforming, while tunnel junctions (FTJs) arises barrier height or width variation polarization reverses between asymmetric electrodes. Here authors demonstrate a coexistence induced BaTiO3...

10.1002/adma.201606165 article EN Advanced Materials 2017-04-25

In the past 10 years, ubiquitous manufacturing (UM) has received a growing amount of attention among researchers in community because computing technologies (UCTs) can be applied to address wide range issues industry, e.g. processes and equipment, management planning. However, best authors' knowledge, there is lack comprehensive critical review from holistic view state-of-the-art UM its systems. This paper aims provide concise overview technical features, characteristics broad applications...

10.1080/00207543.2017.1413259 article EN International Journal of Production Research 2017-12-14

Magnetic van der Waals (vdW) materials possess versatile spin configurations stabilized in reduced dimensions. One magnetic order is the interlayer antiferromagnetism A-type vdW antiferromagnet, which may be effectively modified by field, stacking order, and thickness scaling. However, atomically revealing orientation antiferromagnet highly challenging, because most of material candidates exhibit an insulating ground state or instability ambient conditions. Here, we report layer-dependent...

10.1021/acsnano.2c01151 article EN ACS Nano 2022-05-19

Neuromorphic computing (NC), which emulates neural activities of the human brain, is considered for low-power implementation artificial intelligence. Toward realizing NC, fabrication, and investigations hardware elements─such as synaptic devices neurons─are crucial. Electrolyte gating has been widely used conductance modulation by massive carrier injections proven to be an effective way emulating biological synapses. Synaptic devices, in form transistors, have studied using various...

10.1021/acsami.1c19916 article EN ACS Applied Materials & Interfaces 2022-03-01

Coherent deep ultraviolet (DUV) light sources are crucial for various applications such as nanolithography, biomedical imaging, and spectroscopy. DUV can be generated by using conventional nonlinear optical crystals (NLOs). However, NLOs limited their bulky size, inadequate transparency at the regime, stringent phase-matching requirements harmonic generation. Recently, dielectric metasurfaces support high Q-factor resonances offer a promising approach efficient generation short wavelengths....

10.1021/acsnano.3c10471 article EN ACS Nano 2024-01-23

Energy transfer is a ubiquitous phenomenon that delivers energy from blue-shifted emitter to red-shifted absorber, facilitating wide photonic applications. Two-dimensional (2D) semiconductors provide unique opportunities for exploring novel mechanisms in the atomic-scale limit. Herein, we have designed planar optical microcavity-confined MoS

10.1038/s41467-024-45554-y article EN cc-by Nature Communications 2024-02-26
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