A5091365102- Semiconductor materials and interfaces
- 2D Materials and Applications
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- ZnO doping and properties
- Ga2O3 and related materials
- Graphene research and applications
- Ferroelectric and Negative Capacitance Devices
- Advanced Photocatalysis Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Perovskite Materials and Applications
- GaN-based semiconductor devices and materials
- Advanced Thermoelectric Materials and Devices
- Metal and Thin Film Mechanics
- Silicon Nanostructures and Photoluminescence
- Semiconductor Quantum Structures and Devices
- Gas Sensing Nanomaterials and Sensors
- Nanowire Synthesis and Applications
- Chalcogenide Semiconductor Thin Films
- Copper-based nanomaterials and applications
- Thin-Film Transistor Technologies
- Quantum Dots Synthesis And Properties
Institute of Materials Research and Engineering
2015-2024
Agency for Science, Technology and Research
2015-2024
Singapore Polytechnic
2018
Institute for Materials Research, Tohoku University
2018
Indian Institute of Technology Kharagpur
2009-2010
National University of Singapore
2001-2007
University of California, San Diego
2007
Pennsylvania State University
1998-2002
Advanced Micro Devices (United States)
2000
University of Chicago
1991-1992
The two-dimensional layer of molybdenum disulfide (MoS2) exhibits promising prospects in the applications optoelectronics and valleytronics. Herein, we report a successful new process for synthesizing wafer-scale MoS2 atomic layers on diverse substrates via magnetron sputtering. Spectroscopic microscopic results reveal that these synthesized are highly homogeneous crystallized; moreover, uniform monolayers at wafer scale can be achieved. Raman photoluminescence spectroscopy indicate...
Abstract Neuromorphic computing, which emulates the biological neural systems could overcome high‐power consumption issue of conventional von‐Neumann computing. State‐of‐the‐art artificial synapses made two‐terminal memristors, however, show variability in filament formation and limited capacity due to their inherent single presynaptic input design. Here, a memtransistor‐based artificial synapse is realized by integrating memristor selector transistor into multiterminal device using monolayer...
Cu<sub>2</sub>O and CuO thin films deposited by a sol–gel spin-coating process show promise for photocatalytic water splitting.
Cupric oxide (CuO) thin film was sputtered onto fluorine-doped tin (FTO) coated glass substrate and incorporated into a photoelectrochemical (PEC) cell as photocathode. Through in situ nanocrystal engineering, CuO shows an improvement its stability photocurrent generation capability. For the same thickness (150 nm), films deposited at sputtering power of 300 W exhibit ∼0.92 mAcm–2 (0 V vs RHE), which is significantly higher than those 30 (∼0.58 mAcm–2). By increasing to 500 nm, further...
Abstract Realization of memristors capable storing and processing data on flexible substrates is a key enabling technology toward “system‐on‐plastics”. Recent advancements in printing techniques show enormous potential to overcome the major challenges current manufacturing processes that require high temperature planar topography, which may radically change system integration approach substrates. However, fully printed are yet be successfully demonstrated due lack robust printable switching...
Memristor crossbar with programmable conductance could overcome the energy consumption and speed limitations of neural networks when executing core computing tasks in image processing. However, implementation array (CBA) based on ultrathin 2D materials is hindered by challenges associated large-scale material synthesis device integration. Here, a memristor CBA demonstrated using wafer-scale (2-inch) polycrystalline hafnium diselenide (HfSe2 ) grown molecular beam epitaxy, metal-assisted van...
Two-terminal resistive switching devices are commonly plagued with longstanding scientific issues including interdevice variability and sneak current that lead to computational errors high-power consumption. This necessitates the integration of a separate selector in one-transistor-one-RRAM (1T-1R) configuration mitigate crosstalk issue, which compromises circuit footprint. Here, we demonstrate multi-terminal memtransistor crossbar array increased parallelism programming via independent gate...
Abstract The rapid development in information technologies necessitates advancements of their supporting hardware. In particular, new computing paradigms are needed to overcome the bottleneck traditional von Neumann architecture. Bottom‐up innovation, especially at materials and devices level, has potential disrupt existing through emergent phenomena. As a type conceptual device, 2D ferroelectric field‐effect transistor (FeFET) is highly sought after due its integration with modern...
Photovoltaics and photocatalysis are two significant applications of clean sustainable solar energy, albeit constrained by their inability to harvest the infrared spectrum radiation. Lanthanide-doped materials particularly promising in this regard, with tunable absorption region ability convert long-wavelength excitation into shorter-wavelength light output through an upconversion process. In review, we highlight emerging lanthanide-doped areas photovoltaics photocatalysis. We attempt...
In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiOx) films are able to provide a—up now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The provided by the ALD TiOx is activated a post-deposition anneal and subsequent light soaking treatment. Ultralow effective recombination velocities down 2.8 cm/s 8.3 cm/s, respectively, achieved n-type p-type float-zone c-Si wafers. Detailed analysis confirms...
Atomically thin Mo1−xWxS2 (0 ≤ x 1) ternary compounds have been grown on 2-inch c-plane sapphire substrates with high uniformity by sulfurizing Mo1−xWx layers that were deposited at room temperature using a co-sputtering technique. Atomic force microscopy (AFM), Raman scattering, and optical absorbance spectroscopy (OAS) studies reveal the films consist of crystallites two-to-four monolayers in thickness. X-ray photoelectron (XPS) shows core levels Mo3d W4f shift to lower binding energies...
The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when compressive/tensile strain is applied on the NB. This mainly due to change in Schottky barrier height (SBH). A theoretical model proposed explain observed phenomenon.
We present a method for substitutional p-type doping in monolayer (1L) and few-layer (FL) WS2 using highly reactive nitrogen atoms. demonstrate that the nitrogen-induced lattice distortion atomically thin is negligible due to its low kinetic energy. The electrical characteristics of 1L/FL field-effect transistors (FETs) clearly show an n-channel p-channel conversion with incorporation. investigate defect formation energy origin conduction first-principles calculations. reveal state appears...
Abstract Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding interface properties between atomically thin MoS channel gate dielectric is fundamentally important enhancing carrier transport properties. Here, we investigate frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with monolayer an ultra-thin HfO high- k dielectric. We...
Abstract Two-dimensional (2D) materials and their corresponding van der Waals heterostructures have drawn tremendous interest due to extraordinary electrical optoelectronic properties. Insulating 2D hexagonal boron nitride ( h -BN) with an atomically smooth surface has been widely used as a passivation layer improve carrier transport for other materials, especially Transition Metal Dichalcogenides (TMDCs). However, heat flow at the interface between TMDCs -BN, which will play important role...
Multilayer coating structure comprising a copper (Cu) layer sandwiched between titanium dioxide (TiO2) were demonstrated as transparent heat reflecting (THR) on glass for energy-saving window application. The main highlight is the utilization of Cu, low-cost material, in-lieu silver which widely used in current commercial glass. Color tunable was realized through design multilayer and process optimization. impact thermal treatment overall performance sputter deposited TiO2/Cu/TiO2 thin film...
The nature and extent of electronic screening at heterointerfaces their consequences on energy level alignment are profound importance in numerous applications, such as solar cells, electronics etc. increasing availability two-dimensional (2D) transition metal dichalcogenides (TMDs) brings additional opportunities for them to be used interlayers "van der Waals (vdW) heterostructures" organic/inorganic flexible devices. These innovations raise the question which 2D TMDs participate actively...