Yesheng Li

ORCID: 0009-0006-9357-2412
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Research Areas
  • Advanced Memory and Neural Computing
  • Advancements in Battery Materials
  • Ferroelectric and Negative Capacitance Devices
  • Gas Sensing Nanomaterials and Sensors
  • Transition Metal Oxide Nanomaterials
  • Supercapacitor Materials and Fabrication
  • Advanced Photocatalysis Techniques
  • Electrocatalysts for Energy Conversion
  • X-ray Diffraction in Crystallography
  • Advanced battery technologies research
  • Crystallization and Solubility Studies
  • Advanced Battery Materials and Technologies
  • Metal and Thin Film Mechanics
  • Photoreceptor and optogenetics research
  • Aluminum Alloy Microstructure Properties
  • Advanced Battery Technologies Research
  • Liver Disease Diagnosis and Treatment
  • Perovskite Materials and Applications
  • Hepatocellular Carcinoma Treatment and Prognosis
  • Copper-based nanomaterials and applications
  • Lung Cancer Treatments and Mutations
  • Analytical Chemistry and Sensors
  • Aluminum Alloys Composites Properties
  • Graphene research and applications
  • Electromagnetic wave absorption materials

Jiangxi University of Science and Technology
2010-2024

Wuhan University
2022-2024

Fudan University Shanghai Cancer Center
2023-2024

Guizhou Electric Power Design and Research Institute
2024

Suzhou Research Institute
2024

Shanghai Public Health Clinical Center
2018-2023

National University of Singapore
2019-2022

State Key Laboratory of New Ceramics and Fine Processing
2015-2020

Tsinghua University
2015-2020

Wenzhou University
2018-2019

In this paper, we reported that oxygen vacancies could be introduced in tungsten oxide hierarchical nanostructures through air treatment at certain temperatures. The production of may due to two mechanisms, i.e., critical phase transition and nanoscale inhomogeneous deformation, depending on the annealing temperature or time size building block. can 300 350 °C when transformation from orthorhombic WO3·0.33H2O hexagonal WO3 takes place 400 deformation occurs nanobelts. Moreover, vacancy...

10.1021/acs.jpcc.6b00457 article EN The Journal of Physical Chemistry C 2016-04-16

Brain‐inspired neuromorphic computing is a new paradigm that holds great potential to overcome the intrinsic energy and speed issues of traditional von Neumann based architecture. With ability perform vector‐matrix multiplications flexible tunable conductance, memristor crossbar array (CBA) structure one most promising candidates realize neural cognitive systems. The boom in development memristive synapses neurons has propelled developments artificial networks (ANNs) emulate highly...

10.1002/aisy.202000137 article EN cc-by Advanced Intelligent Systems 2020-11-04

Memristor crossbar with programmable conductance could overcome the energy consumption and speed limitations of neural networks when executing core computing tasks in image processing. However, implementation array (CBA) based on ultrathin 2D materials is hindered by challenges associated large-scale material synthesis device integration. Here, a memristor CBA demonstrated using wafer-scale (2-inch) polycrystalline hafnium diselenide (HfSe2 ) grown molecular beam epitaxy, metal-assisted van...

10.1002/adma.202103376 article EN Advanced Materials 2021-09-12

In-memory computing based on memristor arrays holds promise to address the speed and energy issues of classical von Neumann system. However, stochasticity ions' transport in conventional oxide-based memristors imposes severe intrinsic variability, which compromises learning accuracy hinders implementation neural network hardware accelerators. Here, these challenges are addressed using a low-voltage array an ultrathin PdSeOx /PdSe2 heterostructure switching medium realized by controllable...

10.1002/adma.202201488 article EN cc-by Advanced Materials 2022-04-08

Abstract State-of-the-art memristors are mostly formed by vertical metal–insulator–metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to stochastic filament, set/reset voltage MIM is difficult control, results in poor temporal and spatial uniformity. Here, a two-terminal lateral memristor based electron-beam-irradiated rhenium disulfide (ReS 2 ) realized, unveils mechanism Schottky barrier height (SBH) modulation. The...

10.1038/s41699-020-00190-0 article EN cc-by npj 2D Materials and Applications 2021-01-04

Abstract Memristors with biological synaptic behaviors and functions have been intensively studied as an important component for neuromorphic computing system, which hold promise to address the power consumption issue in modern computers based on von Neumann architecture. However, resistive switching mechanism that relies stochastic formation of conductive filaments leads poor cycle‐to‐cycle (temporal) cell‐to‐cell (spatial) variations filamentary memristors. The emergence memristors 2D...

10.1002/aelm.202000760 article EN Advanced Electronic Materials 2020-11-09

Coupling charge impurity scattering effects and charge-carrier modulation by doping can offer intriguing opportunities for atomic-level control of resistive switching (RS). Nonetheless, such have remained unexplored memristive applications based on 2D materials. Here a facile approach is reported to transform an RS-inactive rhenium disulfide (ReS2 ) into effective material through interfacial induced molybdenum-irradiation (Mo-i) doping. Using ReS2 as model system, this study unveils unique...

10.1002/adma.202202722 article EN Advanced Materials 2022-05-25

Memristors are considered promising energy-efficient artificial intelligence hardware, which can eliminate the von Neumann bottleneck by parallel in-memory computing. The common imperfection-enabled memristors plagued with critical variability issues impeding their commercialization. Reported approaches to reduce usually sacrifice other performances, e.g., small on/off ratios and high operation currents. Here, we demonstrate an unconventional Ag-doped nonimperfection diffusion...

10.1126/sciadv.adk9474 article EN cc-by-nc Science Advances 2024-03-13

Abstract Hierarchical WO 3 nanomesh, assembled from single-crystalline nanowires, is prepared via a hydrothermal method using thiourea (Tu) as the morphology-controlling agent. Formation of hierarchical architecture comprising nanowires takes place Ostwald ripening mechanism with growth orientation. The sensor based on nanomesh has good electrical conductivity and therefore suitable NO 2 sensing material. exhibited high response, short response recovery time, excellent selectivity towards...

10.1007/s40145-019-0343-3 article EN cc-by Journal of Advanced Ceramics 2020-02-01

Tungsten oxide hierarchical nanostructures controllably assembled with one dimensional which exhibit different exposed facets and crystal phases were synthesized via a facile hydrothermal reaction assisted by urea.

10.1039/c5ce01829c article EN CrystEngComm 2015-01-01

Angiogenesis is a fundamental part of the response to tissue injury, which involved in development hepatic fibrosis. Vascular endothelial growth factor plays an important role angiogenesis. The expression VEGF increased during fibrogenesis and correlates with micro-vessel density. In this study, we investigated effects bevacizumab, anti-angiogenetic drug, on formation We found that bevacizumab could attenuate fibrosis contribute protection liver function. Bevacizumab was also downregulate...

10.1371/journal.pone.0073492 article EN cc-by PLoS ONE 2013-08-30

The roles of nonsteroidal anti-inflammatory drugs (NSAIDs) in the occurrence and prognosis hepatocellular carcinoma (HCC) remain controversial. This analysis aimed to summarize relationships between NSAIDs HCC development.Studies published prior October 1, 2017, PubMed, Embase, Ovid, Web Science, Cochrane Library databases were systematically searched analyzed.Eleven studies included this analysis. A meta-analysis five revealed that aspirin use could significantly decrease risk (hazards...

10.2147/cmar.s167560 article EN cc-by-nc Cancer Management and Research 2018-08-01
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