Lin Wang

ORCID: 0000-0003-3430-7345
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About
Contact & Profiles
Research Areas
  • Crystallization and Solubility Studies
  • X-ray Diffraction in Crystallography
  • 2D Materials and Applications
  • Advanced Memory and Neural Computing
  • Perovskite Materials and Applications
  • ZnO doping and properties
  • Electronic and Structural Properties of Oxides
  • Crystallography and molecular interactions
  • MXene and MAX Phase Materials
  • Ferroelectric and Negative Capacitance Devices
  • Gas Sensing Nanomaterials and Sensors
  • Graphene research and applications
  • Semiconductor materials and devices
  • Copper-based nanomaterials and applications
  • Ferroelectric and Piezoelectric Materials
  • Ga2O3 and related materials
  • Metamaterials and Metasurfaces Applications
  • Supercapacitor Materials and Fabrication
  • Advanced Photocatalysis Techniques
  • Covalent Organic Framework Applications
  • Chemical and Physical Properties in Aqueous Solutions
  • Transition Metal Oxide Nanomaterials
  • Magnetic and transport properties of perovskites and related materials
  • Photoreceptor and optogenetics research
  • Medical Image Segmentation Techniques

Shanghai Jiao Tong University
2023-2025

Shenzhen Institutes of Advanced Technology
2025

Chinese Academy of Sciences
2015-2025

Hohai University
2023-2024

Jiangsu University
2023-2024

Shanghai University
2014-2024

Suzhou Institute of Nano-tech and Nano-bionics
2023-2024

Southeast University
2024

National University of Singapore
2002-2023

Pittsburg State University
2021-2023

Abstract Neuromorphic computing, which emulates the biological neural systems could overcome high‐power consumption issue of conventional von‐Neumann computing. State‐of‐the‐art artificial synapses made two‐terminal memristors, however, show variability in filament formation and limited capacity due to their inherent single presynaptic input design. Here, a memtransistor‐based artificial synapse is realized by integrating memristor selector transistor into multiterminal device using monolayer...

10.1002/adfm.201901106 article EN Advanced Functional Materials 2019-04-22

Abstract Recently, 2D ferroelectrics have attracted extensive interest as a competitive platform for implementing future generation functional electronics, including digital memory and brain‐inspired computing circuits. Fulfilling their potential requires achieving the interplay between ferroelectricity electronic characteristics on device operation level, which is currently lacking since most studies are focused verification of from different materials. Here, by leveraging semiconducting...

10.1002/adfm.202004609 article EN Advanced Functional Materials 2020-09-09

Abstract Realization of memristors capable storing and processing data on flexible substrates is a key enabling technology toward “system‐on‐plastics”. Recent advancements in printing techniques show enormous potential to overcome the major challenges current manufacturing processes that require high temperature planar topography, which may radically change system integration approach substrates. However, fully printed are yet be successfully demonstrated due lack robust printable switching...

10.1002/aelm.201900740 article EN cc-by Advanced Electronic Materials 2019-09-19

Abstract Bulk photovoltaic effect (BPVE), featuring polarization-dependent uniform photoresponse at zero external bias, holds potential for exceeding the Shockley-Queisser limit in efficiency of existing opto-electronic devices. However, implementation BPVE has been limited to naturally materials with broken inversion symmetry, such as ferroelectrics, which suffer low efficiencies. Here, we propose metasurface-mediated graphene photodetectors cascaded polarization-sensitive under...

10.1038/s41467-020-20115-1 article EN cc-by Nature Communications 2020-12-17

Two-dimensional ferroelectrics is attractive for synaptic device applications because of its low power consumption and amenability to high-density integration. Here, we demonstrate that tin monosulfide (SnS) films less than 6 nm thick show optimum performance as a semiconductor channel in an in-plane ferroelectric analogue device, whereas thicker have much poorer response due screening effects by higher concentration charge carriers. The SnS exhibits behaviors with highly stable...

10.1021/acsnano.0c03869 article EN ACS Nano 2020-06-03

In this study, a cost-effective calcium alginate-based ion-exchange resin (CABIER) was employed for treatment of metal waste streams. pH, concentration, and presence competitive ions played important roles in the removal. The X-ray photoelectron spectroscopy (XPS) Fourier transform infrared (FT-IR) analysis indicated that functional groups on carbohydrate backbone (i.e., C−O−R COO-1) were responsible binding metals. It found lead abstraction driven by ion exchange between Ca2+ Pb2+. On...

10.1021/la026060v article EN Langmuir 2002-10-25

Zinc oxide (ZnO) hierarchical structures (HSs) have recently demonstrated notable photochemical and photovoltaic performances attributed to their nano/micro combined architectures. In this study, ZnO HSs were synthesized at room temperature using ultrarapid sonochemistry. This novel approach can effectively overcome deficiencies in the synthesis via traditional direct precipitation by promoting nucleation accelerating diffusion. Only 15 min was needed complete formation of highly...

10.1021/cm400220q article EN Chemistry of Materials 2013-03-01

Abstract Although polymers have been studied for well over a century, there are few examples of covalently linked polymer crystals synthesised directly from solution. One-dimensional (1D) covalent that packed into framework structure can be viewed as 1D organic (COF), but making single crystal this has elusive. Herein, by combining labile metal coordination and dynamic chemistry, we discover strategy to synthesise single-crystal metallo-COFs under solvothermal conditions. The is rigorously...

10.1038/s41467-020-15281-1 article EN cc-by Nature Communications 2020-03-18

Abstract Photodetectors with broadband detection capability are desirable for sensing applications in the coming age of internet‐of‐things. Although 2D layered materials (2DMs) have been actively pursued due to their unique optical properties, by far only graphene and black arsenic phosphorus wide absorption spectrum that covers most molecular vibrational fingerprints. However, reported responsivity response time falling short requirements needed enabling simultaneous weak‐signal high‐speed...

10.1002/adma.201705039 article EN Advanced Materials 2017-12-21

Memristor devices that exhibit high integration density, fast speed, and low power consumption are candidates for neuromorphic devices. Here, we demonstrate a filament-based memristor using p-type SnS as the resistive switching material, exhibiting superlative metrics such voltage ∼0.2 V, speed faster than 1.5 ns, endurance cycles, an ultralarge on/off ratio of 108. The device exhibits ∼100 fJ per switch. Chip-level simulations based on 32 × high-density crossbar arrays with 50 nm feature...

10.1021/acs.nanolett.1c03169 article EN Nano Letters 2021-10-13

Abstract Achieving excellent electrostatic control and immunity to short channel effects are the formidable challenges in ultrascaled devices. 3D device architectures, such as nanoribbon, have successfully mitigated these problems by achieving uniform top‐ side‐wall of channel. Here, leveraging on merits structure, high‐mobility black phosphorus nanoribbon field‐effect transistors (BPNR‐FET) demonstrated anisotropic transport properties systematically investigated. A simple top‐down reactive...

10.1002/adfm.201801524 article EN Advanced Functional Materials 2018-05-21

Abstract Neuromorphic computing on the hardware level is promising for performing ever‐increasing data‐centric tasks owing to its superiority conventional von Neumann architecture in terms of energy efficiency and learning ability. One key aspect implementation development artificial synapses that can effectively emulate multiple functionalities exhibited by their biological counterparts. Here, building an inorganic ferroelectric gate stack integrated with a 2D layered semiconductor (WS 2 ),...

10.1002/aelm.202000057 article EN Advanced Electronic Materials 2020-05-08

Detecting circularly polarized light is central to many advanced sensing technologies. We summarize the recent progress on chiral materials developed for CPL detection and provide perspectives strategies improve dissymmetry factors.

10.1039/d1tc04163k article EN Journal of Materials Chemistry C 2021-10-27

Using high-throughput first-principles calculations to search for layered van der Waals materials with the largest piezoelectric stress coefficients, we discover NbOI2 be one among 2940 monolayers screened. The performance of is independent thickness, and its electromechanical coupling factor near unity a hallmark optimal interconversion between electrical mechanical energy. Laser scanning vibrometer studies on bulk few-layer crystals verify their huge responses, which exceed internal...

10.1038/s41467-022-29495-y article EN cc-by Nature Communications 2022-04-07

The reduced symmetry in strong spin-orbit coupling materials such as transition metal ditellurides (TMDTs) gives rise to non-trivial topology, unique spin texture, and large charge-to-spin conversion efficiencies. Bilayer TMDTs are non-centrosymmetric have topological properties compared monolayer or trilayer, but a controllable way prepare bilayer MoTe2 crystal has not been achieved date. Herein, we achieve the layer-by-layer growth of large-area trilayer 1T' single crystals...

10.1038/s41467-022-33201-3 article EN cc-by Nature Communications 2022-09-17

The miniaturization of ferroelectric devices in non-volatile memories requires the device to maintain stable switching behavior as thickness scales down nanometer scale, which coercive field be sufficiently large. Recently discovered metal-free perovskites exhibit advantages such structural tunability and solution-processability, but they are disadvantaged by a lower compared inorganic perovskites. Herein, we demonstrate that (110 kV/cm) perovskite MDABCO-NH

10.1038/s41467-022-28314-8 article EN cc-by Nature Communications 2022-02-10

Abstract Van der Waals ferroelectric semiconductors, which encompass both ferroelectricity and semiconductivity, have garnered intensive research interests for developing novel non‐volatile functional devices. Previous studies focus on characterization device demonstration, with little attention paid to the fundamental electronic properties of these materials their structures, are essential design optimization. In this study, scanning microwave impedance microscopy (sMIM) is utilized...

10.1002/adfm.202316583 article EN cc-by Advanced Functional Materials 2024-03-13

The narrow band gap property of black phosphorus (BP) that bridges the energy between graphene and transition metal dichalcogenides holds great promise for enabling broadband optical detection from ultraviolet to infrared wavelengths. Despite its rich potential as an intriguing building block optoelectronic applications, however, very little progress has been made in realizing BP-based photodetectors. Here, we demonstrate a high sensitivity BP phototransistor operates at short-wavelength...

10.1021/acsami.7b09713 article EN ACS Applied Materials & Interfaces 2017-09-29
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