A5069423173- Advanced Memory and Neural Computing
- Ferroelectric and Piezoelectric Materials
- Ferroelectric and Negative Capacitance Devices
- Aluminum Alloys Composites Properties
- Transition Metal Oxide Nanomaterials
- Metal Forming Simulation Techniques
- Advanced Sensor and Energy Harvesting Materials
- Advanced ceramic materials synthesis
- Neural dynamics and brain function
- Semiconductor materials and devices
- Acoustic Wave Resonator Technologies
- Dielectric materials and actuators
- Photoreceptor and optogenetics research
- Advanced Welding Techniques Analysis
- Additive Manufacturing and 3D Printing Technologies
- Neural Networks and Reservoir Computing
Shandong University
2022-2025
State Key Laboratory of Crystal Materials
2022-2024
Abstract Artificial synapses can boost neuromorphic computing to overcome the inherent limitations of von Neumann architecture. As a promising memristor candidate, ferroelectric tunnel junctions (FTJ) enable authors successfully emulate spike‐timing‐dependent synapses. However, nonlinear and asymmetric synaptic weight update under repeated presynaptic stimulation hampers by favoring runaway weights during learning. Here, demonstrate an FTJ whose conductivity varies linearly symmetrically...
Neuromorphic computing provides alternative hardware architectures with high computational efficiencies and low energy consumption by simulating the working principles of brain artificial neurons synapses as building blocks. This process helps overcome insurmountable speed barrier power from conventional von Neumann computer architectures. Among emerging neuromorphic electronic devices, ferroelectric-based have attracted extensive interest for their good controllability, deterministic...
Abstract The advent of big data and the Internet Things has created urgent demands for in‐sensor computing hardware with multimodal perception that can effectively resolve inefficiency, high latency, excessive energy consumption challenges faced by conventional sensory systems. Here, a simple‐structured optoelectronic synaptic device In 2 O 3 ·SnO /Nb:SrTiO (ITO/NSTO) heterostructure is proposed, which vividly demonstrates capabilities. First, ingenious responses under both optical...
Abstract Artificial synapses are electronic devices that simulate important functions of biological synapses, and therefore the basic components artificial neural morphological networks for brain-like computing. One most objectives developing is to characteristics as much possible, especially their self-adaptive ability external stimuli. Here, we have successfully developed an synapse with multiple synaptic highly adaptive based on a simple SrTiO 3 /Nb: heterojunction type memristor. Diverse...
Abstract The brain's unique processing power, such as perception, understanding, and interaction with the multimodal world, is achieved through diverse synaptic functionalities, which include varied temporal responses adaptation. Although specific functions in brain‐like computing have been successfully realized, emulating recognition spatio‐temporal learning remain significant challenges due to difficulties achieving signal adaptive long‐term plasticity a single electronic synapse. Here,...
Photovoltaic (PV) neuromorphic devices with photocurrents under illumination as readouts have gained increasing attention due to their ultralow latency and excellent energy efficiency during reading process. However, they face significant challenges in processing temporal data because of the lack inherent dynamics, limiting application reservoir computing (RC) systems. Here, we developed a simple two-terminal PV device based on an indium tin oxide/Nb-SrTiO3 oxide Schottky heterojunction,...
The engineering of ferroic orders, which involves the evolution atomic structure and local configuration in development next-generation electronic devices. Until now, diverse polarization structures topological domains are obtained ferroelectric thin films or heterostructures, switching subsequent domain nucleation found to be more conducive building energy-efficient multifunctional structures. In this work, a continuous periodic strain flexible freestanding BaTiO
Ferroelectric tunnel junctions (FTJs) have been regarded as one of the most promising candidates for next-generation devices data storage and neuromorphic computing owing to their advantages such fast operation speed, low energy consumption, convenient 3D stack ability, etc. Here, dramatically different from conventional engineering approaches, we developed a barrier decoration strategy improve ON/OFF ratio, where ultrathin SrTiO3 (STO) dielectric layers are periodically mounted onto BaTiO3...
Low-energy switching of ferroelectrics has been intensively studied for energy-efficient nanoelectronics. Mechanical force is considered as a low-energy consumption technique the polarization ferroelectric films due to flexoelectric effect. Reduced threshold always desirable considerations energy saving, easy domain manipulation, and sample surface protection. In this work, mechanical behaviors BaTiO3/SrRuO3 epitaxial heterostructure grown on Nb:SrTiO3 (001) substrate are reported. Domain...