Noga Meir

ORCID: 0000-0002-7467-373X
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About
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Research Areas
  • Quantum Dots Synthesis And Properties
  • Chalcogenide Semiconductor Thin Films
  • Nanowire Synthesis and Applications
  • Perovskite Materials and Applications
  • 2D Materials and Applications
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Graphene research and applications
  • Luminescence and Fluorescent Materials
  • Luminescence Properties of Advanced Materials
  • Phase-change materials and chalcogenides
  • Surface and Thin Film Phenomena
  • Nanomaterials for catalytic reactions
  • Semiconductor materials and devices
  • Quantum optics and atomic interactions
  • Plasmonic and Surface Plasmon Research
  • Nonlinear Optical Materials Studies
  • Copper-based nanomaterials and applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Thin-Film Transistor Technologies
  • Silicon Nanostructures and Photoluminescence
  • Molecular Junctions and Nanostructures
  • Nonlinear Optical Materials Research
  • Ferroelectric and Negative Capacitance Devices
  • Near-Field Optical Microscopy

Nova Measuring Instruments (Israel)
2021-2024

Weizmann Institute of Science
2014-2019

Melodea (Israel)
2014

Ben-Gurion University of the Negev
2012

We studied the chemical, optical and catalytic properties of metal (Pt, Pd, Ag, Au)–Cu2O core–shell nanoparticles grown via a simple reproducible approach which utilizes aqueous-phase reactions at room temperature. were able to control thickness Cu2O shell examine effect core's shape size on structure hybrid nanocrystals. also nanocrystals, in particular frequency plasmon gold nanorods. In addition, activity nanostructures was examined by testing reduction reaction 4-nitrophenol with NaBH4....

10.1039/c2ta00721e article EN Journal of Materials Chemistry A 2012-12-06

Pairs of coupled quantum dots with controlled coupling between the two potential wells serve as an extremely rich system, exhibiting a plethora optical phenomena that do not exist in each isolated constituent dots. Over past decade, systems have been under extensive study context epitaxially grown (QDs), but only handful examples reported colloidal QDs. This is mostly due to difficulties controllably growing nanoparticles encapsulate within them separated by energetic barrier via synthesis...

10.1021/acs.accounts.5b00554 article EN publisher-specific-oa Accounts of Chemical Research 2016-04-23

Nonlinear optical processes can be dramatically enhanced via the use of localized surface plasmon modes in metal nanoparticles. Here we show how more elaborate structures, based on shape-controlled Au/Cu2O core/shell nanostructures, enable further enhancement nanoparticle third-harmonic scattering cross-section. The semiconducting component takes a twofold role this structure, both providing knob to tune resonant frequency gold and by virtue its excitonic states. advantages deficiencies...

10.1021/acsnano.5b01834 article EN ACS Nano 2015-07-21

Abstract Solution‐processed core/multishell semiconductor quantum dots (QDs) could be tailored to facilitate the carrier separation, promotion, and recombination mechanisms necessary implement photon upconversion. In contrast other upconversion schemes, upconverting QDs combine stability of an inorganic crystalline structure with spectral tunability afforded by confinement. Nevertheless, their yield (UCQY) is fairly low. Here, design rules are uncovered that enable significantly enhance...

10.1002/adfm.201900755 article EN Advanced Functional Materials 2019-04-05

We investigated the effect of cation exchange on anionic framework lightly doped CdSe:Te/CdS nanorods. In contrast with previously studied core/shell systems, Te dopant, located in center CdSe core, provides an extremely sensitive indicator for any structural changes that may occur as a result process. first optimized procedure order to retain fluorescence properties nanorods after Cd2+ Cu+ and back Cd2+. Next, using multiexciton spectroscopy, we were able probe magnitude exciton–exciton...

10.1021/acs.chemmater.6b03332 article EN publisher-specific-oa Chemistry of Materials 2016-10-13

We optimized the performance of quantum confined Stark effect QCSE based voltage nanosensors. A high throughput approach for single particle characterization was developed and utilized to screen a library such Type II ZnSe CdS seeded nanorods were found have best among different nanosensors evaluated in this work. The degree correlation between intensity changes spectral excitons emission under applied field characterized. An upper limit temporal response individual modulation characterized...

10.1021/acsphotonics.8b00617 article EN ACS Photonics 2018-10-15

Abstract Logic devices based on two-dimensional (2D) channel materials require highly crystalline monolayers. Despite various laboratory-scale metrology techniques being intensively used to characterize 2D small coupons, the development of in-line and routine characterization material monolayers grown 300 mm wafers remains in its early stages. In this work, we evaluate combine different metrologies thickness morphology tungsten disulfide (WS 2 ) at wafer level. By combining complementary...

10.35848/1347-4065/ad26bc article EN other-oa Japanese Journal of Applied Physics 2024-02-06

Matching the reactivities of S and Se, homogenously alloyed ultrathin sheets CdS<sub>x</sub>Se<sub>1−x</sub> were obtained. The 5–6 monolayer thick nanosheets showed promising optical properties (e.g. quantum yield) relative to binary compounds.

10.1039/c4ra10559a article EN RSC Advances 2014-01-01

In-line Raman spectroscopy for compositional and strain metrology throughout front-end-of-line (FEOL) manufacturing of next-generation gate-all-around nanosheet field-effect transistors is presented. Thin alternating layers fully strained pseudomorphic Si(1 − x)Gex Si were grown epitaxially on a substrate subsequently patterned. Intentional variations introduced by changing the Ge content (x = 0.25, 0.35, 0.50). Polarization-dependent in-line was employed to characterize quantify evolution...

10.1117/1.jmm.21.2.021203 article EN cc-by Journal of Micro/Nanopatterning Materials and Metrology 2022-01-27

Nanomaterials that possess the ability to upconvert two low-energy photons into a single high-energy photon are of great potential be useful in variety applications. Recent attempts realize upconversion (UC) semiconducting quantum dot (QD) systems focused mainly on fabrication heterostructured colloidal double QDs, or by using QDs as sensitizers for triplet-triplet annihilation organic molecules. Here we propose simplified approach, which coupled thiol ligands and UC is achieved via...

10.1039/c9ra01273g article EN cc-by-nc RSC Advances 2019-01-01

Devices based on 2D material channels require high-quality monolayer material. However, although the value of many laboratory metrology techniques has been demonstrated small coupons, development inline characterization layers grown full 300mm wafers is still missing. In this work, we evaluate and combine different metrologies to characterize at wafer level thickness morphology tungsten disulfide (WS<sub>2</sub>) wafers. Combining results from allows us reveal WS<sub>2</sub> as well their...

10.1117/12.2657968 article EN 2023-04-27

Optical gain from colloidal quantum dots has been desired for several decades since their discovery. While multiexcitations is by now well-established, nonradiative Auger recombination limits the lifetime of such population inversion in dots. CdSe cores isovalently doped one to few Te atoms capped with rod-shaped CdS are examined as a candidate system enhanced stimulated emission properties. Emission depletion spectroscopy shows behavior characteristic 3-level systems these This implies...

10.1021/nn506404n article EN ACS Nano 2014-12-31

In-line Raman spectroscopy for compositional and strain metrology throughout front-end-of-line manufacturing of next generation stacked gate-all-around nanosheet field-effect transistors is presented. Thin alternating layers fully strained pseudomorphic Si<sub>(1-x)</sub>Ge<sub>x</sub> Si were grown epitaxially on a substrate subsequently patterned. Intentional variations introduced by changing the Ge content (x = 0.25, 0,35, 0.50). Polarization-dependent in-line was employed to characterize...

10.1117/12.2582181 article EN Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV 2021-02-19
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