The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue weak MOSFETs' output current and threshold voltage. MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to maximum cumulative dose. Despite intrinsic hardness Ga2O3, radiation-induced gate leakage drain dispersion...

Gamma-ray irradiation into vertical type n-channel hexagonal (4H)-silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) was performed under various gate biases. The threshold voltage for the MOSFETs irradiated with a constant positive bias showed large negative shift, and shift slightly recovered above 100 kGy. For non- biases, no significant change in voltage, Vth, observed up to 400 By changing from either or non-bias, Vth significantly induced by 50 kGy after...

The single-event damage observed in AlGaN/GaN high-electron mobility transistors (HEMTs) was investigated. For power control applications, normally off operation is achieved by p-type GaN gate material and its rated drain-source voltage of 600 V. Because no insulator, rupture essentially excluded. Therefore, the HEMTs are expected to exhibit better immunity heavy ions comparison with SiC MOSFETs. In test results, two types catastrophic failure modes were different leakage current paths; one...

SiC membranes were prepared using curing of precursor polymer (polycarbosilane, PCS) film by electron beam irradiation in helium atmosphere. The membrane via PCS coated 10 mass% solution for dip-coating followed immersing it 30 s solution, showed H2 permeance 3.1×10−7 mol/m2/s/Pa and the selectivity 51 at 523 K. was increased proportional to temperature activated diffusion H2. It indicates without pinholes or cracks formed on support. As pyrolysis cured increased, reached maximum 923

The voltage dependence of the single-event upset (SEU) cross section on a 16-nm FinFET static random access memory (SRAM) is investigated. According to experimental and numerical simulation results under low linear energy transfer (LET) conditions, SRAM does not decrease exponentially as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {DD}}$ </tex-math></inline-formula> increases.

In order to develop highly radiation-tolerant SiC MOSFETs, we investigated the dependence of gamma-ray radiation response on gate oxide thickness and nitridation processes, used for growth p-well implantation. MOSFETs with a thick (60 nm) showed rapid decrease in threshold voltage shift ΔVth more than 400 kGy, transitioned normally-on state at lower doses those thin (35 nm). The oxides treated concentrations N2O (10%) demonstrated higher tolerance (ΔVth, channel mobility, subthreshold swing)...

Silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) are expected as power electronic devices for high radiative conditions, including nuclear plants and space. Radiation response of commercial-grade prototype SiC MOSFETs with applying the gate bias is interest, in terms installation device robots or sensors working under such radioactive circumstances. Due to gamma-rays irradiation, threshold voltages (Vth) samples un- negative-biased up -4.5 V slightly shift...

Abstract The response of hexagonal (4H) silicon carbide (SiC) power metal–oxide–semiconductor field effect transistors (MOSFETs) to gamma-ray irradiation was investigated under elevated temperature and humid conditions. shift in drain current–gate voltage ( I D – V G ) curves towards negative voltages the leakage with a current hump due were suppressed high humidity conditions relative dry This result can be explained terms reduction trapped oxide charge oxide–SiC interface traps generated...

Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150°C up to 10.4 MGy. Until irradiation 1.2 MGy, the drain current – gate voltage curves SiC MOSFETs shifted negative side, and leakage voltages below threshold increased with increasing absorbed dose. However, no significant change in electrical characteristics observed doses above For blocking characteristics, there were degradations irradiated even after

Gamma-ray irradiation effects of motor-driver circuit composed SiC MOSFETs under motor driving with different PWM frequencies were investigated. The current and voltage waveforms normal when the exceeded 1.1 MGy at frequency 10 kHz. In addition, was still rotating in this total dose. We compared responses between cases states no bias. drain – gate characteristics bias shifted to negative side wider than states. Also leakage case state is fewer that

For radiation hardened image sensors, a Silicon-On-Insulator (SOI) -Si/ 4H-SiC hybrid pixel device was developed. The consists of one Si photodiode and three nMOSFETs. At fabrication, SOI substrate directly bonded on via SiO2. After bonding, the base silicon Buried Oxide (BOX) were removed by TMAH wet-etching. By using this SOI-Si/ substrate, SOI-Si photodiodes nMOSFETs integrated in same substrate. As result, response to light illumination successfully demonstrated.

High dose irradiation effects of gamma-rays up to 17 MGy (H2O) on 4H-SiC junction field effect transistors (JFETs) were investigated. Due the irradiation, gradual positive threshold voltage (Vth) shift as high 0.5 V and continuous decrease in transconductance gm observed. In addition, Vth instability hysteresis appeared for irradiated JFETs when gate (VG) sweep direction, interval, i.e., averaged sweeping rate, range, delay time changed. Increase VG interval attributed both forward reverse...

Single-event effects (SEEs) of atom switches (ASs) embedded on 40-nm complementary metal-oxide-semiconductor (CMOS) are investigated with both heavy-ion and pulsed laser irradiation. In the evaluation an AS-based field-programmable gate array (AS-FPGA), ASs show immunity against irradiation there is no change state in a cross-bar switch memory lookup tables (LUTs). not supposed to make any single-event transient (SET) noise when ions hit. However, CMOS layer shows SETs, new approaches...

This article investigates the single-event effects on 16-nm bulk field-effect transistors (FinFETS) in terms of single-bit upsets and multiple-cell under heavy ion irradiation. These are analyzed classified according to voltage, linear energy transfer ions, data patterns, fail bit patterns. The analysis suggested a characteristic charge collection mechanism attributable FinFET structure. Estimation unique sensitive area shape based cross sections is also discussed.

For radiation-hardened CMOS image sensor (CIS), 4H-SiC photosensors with active pixel (APS)-type circuits were developed and demonstrated. The dark current of photodiodes was <2 nA/cm2. spectral sensitivity characteristics also evaluated in the wavelength from 200 nm to 400 nm. maximal quantum efficiency 63% at 270 APS type showed high responses UV light, demonstrating their operation. High gamma-ray dose experiments carried out. after 2 MGy (SiO2) irradiation 25 APS-type successfully...

Abstract For radiation-hardened CMOS image sensors (CIS), 4H-SiC 64 pixel array CIS were developed, and real time imaging with an operation frequency of 30 Hz was demonstrated. Two types arrays a 3-transistor active sensor (3T-APS) 4-transistor (4T-APS) fabricated SiC MOSFETs, UV photodiodes 3-layered Al interconnections. The combined peripheral circuits optical lens, 3T-/4T-APS developed.

Single Event Gate Rupture (SEGR) is one of the catastrophic failures caused by heavy ions in power MOS devices. In this study, n-type SiC capacitors representing gate structure generally used MOSFETs were to conduct ion irradiation tests clarify SEGR mechanism. The Linear Energy Transfer (LET) dependence critical electric field ( E cr ) for these was evaluated with two different oxidation processes accumulation confirm whether process affects tolerance. We found that value and slopes LET...

4H-SiC n-channel metal oxide semiconductor field effect transistors (NMOSFETs) with a Ba-silicate interface layer were irradiated gamma-rays up to 850 kGy at room temperature. Above 600 kGy, the mobility increased from 12 18 cm2 V−1 s−1. The narrower channel in NMOSFETs enhanced radiation responses, such as enhancement and threshold voltage shift. These results indicate that edge of significantly modifies electrical characteristics.

The behavior of damage sites induced by SEGR in SiC vertical power MOSFETs was found to be essentially different from that observed corresponding Si devices, although the electrical similarly modeled.

Semiconductor laser based, injection locking was performed for efficient excitation of subjects. The linewidth the master extended to 380MHz by using a frequency modulation technique through direct current modulation. By with broad-area semiconductor laser, modulated input amplified 610mW, faithfully maintaining broadened and spectral shape. This result means that compact high power system is possible broad precisely controllable.

Silicon carbide junction field effect transistors (SiC JFETs) were irradiated with gamma-rays up to 9 MGy (H 2 O). With increasing dose, apparent shift of drain current-gate voltage ( I D - V G ) curves negative side as observed for SiC metal oxide semiconductor (MOS) FETs did not take place. No significant difference is between and gate leakage currents JFETs. This strongly indicates that defects paths introduced into bulk region but the interface passivation layer SiO . While, transfer...

Two kinds of Si–O–C(–H) particles having intrinsic photoluminescence (PL) spectra were prepared from silicone resin microspheres by heat treatment in a hydrogen atmosphere at 800 or 1100°C. The obtained painted on Si substrate using binder, and ion-beam-luminescence observed under proton beam irradiation with an acceleration energy the range 1–3 MeV. Observed had peaks wavelength 520–540 nm. These peak wavelengths larger than those UV light irradiation. luminescence H2 1100 (sample...