A 12.6% Cu2ZnSnSxSe4–x (CZTSSe) solar cell is presented with detailed device characteristics. Both short-circuit current density (Jsc) and open circuit voltage (Voc) increase in the champion, relative to previous devices, due better bulk CZTSSe quality improved optical architecture. The reduction Voc deficit shows opportunities push cells higher efficiency.

ABSTRACT Using vacuum process, we fabricated Cu 2 ZnSnS 4 solar cells with 8.4% efficiency, a number independently certified by an external, accredited laboratory. This is the highest efficiency reported for pure sulfide prepared any method. Consistent literature, optimal composition Cu‐poor and Zn‐rich despite precipitation of secondary phases (e.g., ZnS). Despite very thin absorber thickness (~600 nm), reasonably good short‐circuit current was obtained. Time‐resolved photoluminescence...

A world-record CZTSSe device is reported, surpassing 11% power conversion efficiency for the first time. The results reflect not only higher efficiency, but also other improved characteristics, such as fill factor and short circuit current. improvement in devices continues to point significant promise kesterite-based absorbers.

ABSTRACT A power conversion efficiency record of 10.1% was achieved for kesterite absorbers, using a Cu 2 ZnSn(Se,S) 4 thin‐film solar cell made by hydrazine‐based solution processing. Key device characteristics were compiled, including light/dark J–V , quantum efficiency, temperature dependence V oc and series resistance, photoluminescence, capacitance spectroscopy, providing important insight into how the devices compare with high‐performance Cu(In,Ga)Se . The shown to be primarily limited...

We demonstrate that a fundamental performance bottleneck for hydrazine processed kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells with efficiencies reaching above 11% can be the formation of band-edge tail states, which quantum efficiency and photoluminescence data indicate is roughly twice as severe in higher-performing Cu(In,Ga)(S,Se)2 devices. Low temperature time-resolved suggest enhanced tailing arises primarily from electrostatic potential fluctuations induced by strong compensation...

High efficiency Cu2ZnSnS4 solar cells have been fabricated on glass substrates by thermal evaporation of Cu, Zn, Sn, and S. Solar with up to 6.8% were obtained absorber layer thicknesses less than 1 μm annealing times in the minutes. Detailed electrical analysis devices indicate that performance is limited high series resistance, a “double diode” behavior current voltage characteristics, an open circuit carrier recombination process activation energy below band gap material.

Abstract High‐performance Cu 2 ZnSnS 4 photovoltaic devices are demonstrated using electrodeposition of metal stacks and annealing a CuZnSn precursor in sulfur atmosphere. A champion electroplated solar cell achieves power conversion efficiency 7.3%, which is record for electrodeposited devices. The device performance points to as low‐cost viable approach earth‐abundant fabrication.

11.6%-efficiency Cu2ZnSnSe4 (CZTSe) thin-film solar cells are fabricated via a thermal co-evaporation method. The CZTSe thin film with improved microstructure exhibits minority carrier diffusion length over 2 μm, resulting in efficient photogenerated collection the device. A comparative study of photoluminescence pure selenide and sulfide devices shows reduced band-tailing for phase.

High-efficiency Cu2ZnSn(S,Se)4 solar cells are reported by applying In2S3/CdS double emitters. This new structure offers a high doping concentration within the cells, resulting in substantial enhancement open-circuit voltage. The 12.4% device is obtained with record voltage deficit of 593 mV.

In this work, we describe details of a two-step deposition approach that enables the preparation continuous and well-structured thin films Cs2SnI6, which is one-half Sn-deficient 0-D perovskite derivative (i.e., compound can also be written as CsSn0.5I3, with structure consisting isolated SnI64– octahedra). The were characterized using powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), thermogravimetric analysis (TGA), UV–vis spectroscopy, photoluminescence (PL),...

We present a device characterization study for hydrazine-processed kesterite Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with focus on pinpointing the main loss mechanisms limiting efficiency. Temperature-dependent and time-resolved photoluminescence spectroscopy these cells, in comparison to analogous studies reference Cu(In,Ga)(Se,S)2 (CIGS) cell, reveal strong recombination at CZTSSe/CdS interface, very low minority-carrier lifetimes, high series resistance that diverges temperature. These...

ABSTRACT The remarkable potential for inexpensive upscale of solution processing technologies is expected to enable chalcogenide‐based photovoltaic systems become more widely adopted meet worldwide energy needs. Here, we report a thin‐film solar cell with solution‐processed Cu(In,Ga)(S,Se) 2 (CIGS) absorber. power conversion efficiency 15.2% the highest published value pure deposition technique any absorber material and on par best nonvacuum‐processed CIGS devices. We compare performance our...

A low band gap liquid-processed Cu2ZnSn(Se1−xSx)4 (CZTSSe) kesterite solar cell with x ≈ 0.03 is prepared from earth abundant metals, yielding 10.1% power conversion efficiency. This champion shows a of 1.04 eV, higher minority-carrier lifetime, lower series resistance and Voc deficit compared to our previously reported (Eg = 1.15 eV; 0.4) similar record The ability vary the CZTSSe using sulfur content (i.e., varying x) facilitates examination factors limiting performance in current...

Energy band alignments between CdS and Cu2ZnSn(SxSe1−x)4 (CZTSSe) grown via solution-based vacuum-based deposition routes were studied as a function of the [S]/[S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, secondary mass spectrometry. Band bending in underlying CZTSSe layer was measured pump/probe photovoltage shifts spectra offsets determined photoemission under flat conditions. Increasing S content films...

In situ control of perovskite absorber properties enables a record-efficiency two-terminal monolithic perovskite-CIGS tandem thin-film solar cell.

The photovoltaic absorber Cu 2 ZnSn(S x Se 1– ) 4 (CZTSSe) has attracted interest in recent years due to the earth‐abundance of its constituents and realization high performance (12.6% efficiency). open‐circuit voltage CZTSSe devices is believed be limited by band tailing caused exceptionally density Cu/Zn antisites. By replacing with Ag, whose covalent radius ≈15% larger than that Zn, I–II antisite defects predicted drop. fundamental properties mixed Ag‐Cu kesterite compound are reported as...

We present an optical-design approach that improves the short-circuit current and efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells by tuning thickness upper-device layers in order to maximize transmission into CZTSSe absorber. The design combines optical modeling idealized planar devices with a semi-empirical for treating impact surface roughness. Experimentally, we demonstrate new device architecture — which emphasizes thinner CdS transparent-conducting increases about 10% champion-caliber...

We report a monolithic tandem photovoltaic device with earth-abundant solution processed absorbers. Kesterite Cu2ZnSn(S,Se)4 and perovskite CH3NH3PbI3 solar cells were fabricated monolithically on single substrate without layer transfer. The resulting devices exhibited high open circuit voltage (Voc) of 1350 mV, close to the sum single-absorber reference voltages outperforms any chalcogenide (including Cu(In,Ga)Se2) reported date. Ongoing optimization several elements including severely...

We report direct measurements of the valley susceptibility, change population in response to an applied symmetry-breaking strain, AlAs two-dimensional electron system. As density is reduced, susceptibility dramatically increases relative its band value, reflecting system's strong electron-electron interaction. The increase has a remarkable resemblance enhancement spin and establishes analogy between degrees freedom.

Admittance spectra and drive-level-capacitance profiles of several high performance Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with bandgap ∼1.0–1.5 eV are reported. In contrast to the case for Cu(In,Ga)(S,Se)2, CZTSSe capacitance exhibit a dielectric freeze out geometric plateau at moderately low frequencies intermediate temperatures (120–200 K). These reveal important information regarding bulk properties films, such as constant dominant acceptor energy level 0.13–0.2 depending on bandgap. This...

Thin-film CuIn(Se,S)2 (i.e., CIS) absorbers have been solution-deposited using a hydrazine-based approach that offers the potential to significantly lower fabrication cost for CIS solar cells. In this method, metal chalcogenides are completely dissolved in hydrazine, forming homogeneous precursor solution. Film deposition is demonstrated by spin-coating of solution onto various substrates, including Mo-coated glass and thermally oxidized silicon wafers. Using approach, no postdeposition...

While cadmium telluride and copper-indium-gallium-sulfide-selenide (CIGSSe) solar cells have either already surpassed (for CdTe) or reached CIGSSe) the 1 GW yr⁻¹ production level, highlighting promise of these rapidly growing thin-film technologies, reliance on heavy metal scarce elements indium tellurium has prompted concern about scalability towards terawatt level. Despite recent advances in structurally related copper-zinc-tin-sulfide-selenide (CZTSSe) absorbers, which from CIGSSe is...