A5100431956- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- ZnO doping and properties
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Phase-change materials and chalcogenides
- Nanowire Synthesis and Applications
- Electronic and Structural Properties of Oxides
- Perovskite Materials and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Carbohydrate Chemistry and Synthesis
- solar cell performance optimization
- 3D IC and TSV technologies
- Air Quality and Health Impacts
- Electromagnetic wave absorption materials
- Flame retardant materials and properties
- Green IT and Sustainability
- Visual Attention and Saliency Detection
- Catalytic Processes in Materials Science
- Laser Material Processing Techniques
Nankai University
2016-2025
Ningbo Institute of Industrial Technology
2021-2025
Chinese Academy of Sciences
2012-2025
Xi'an Jiaotong University
2025
University of Chinese Academy of Sciences
2022
Tianjin University of Technology
2012-2021
National University of Singapore
2019
BOE Technology Group (China)
2017
Georgia Institute of Technology
2015-2016
AID Atlanta
2015
High-quality Cu(In,Ga)Se2 (CIGS) films are deposited from hydrazine-based solutions and employed as absorber layers in thin-film photovoltaic devices. The CIGS exhibit tunable stoichiometry well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these offer power conversion efficiencies of 10% (AM1.5 illumination).
Thin-film CuIn(Se,S)2 (i.e., CIS) absorbers have been solution-deposited using a hydrazine-based approach that offers the potential to significantly lower fabrication cost for CIS solar cells. In this method, metal chalcogenides are completely dissolved in hydrazine, forming homogeneous precursor solution. Film deposition is demonstrated by spin-coating of solution onto various substrates, including Mo-coated glass and thermally oxidized silicon wafers. Using approach, no postdeposition...
This communication discusses grain size enhancement in CIGS thin films induced by Sb-doping and demonstrates consequent photovoltaic (PV) device performance improvement CIGS-based solar cells. The chemical-doping approach also shows promise enabling low-temperature (≤ 400°C) processing of PV technology.
This paper reviews the development history of alkali element doping on Cu(In,Ga)Se2 (CIGS) solar cells and summarizes important achievements that have been made in this field. The influences incorporation strategies CIGS absorbers device performances are also reviewed. By analyzing surface structure electronic property variation induced by fluoride (NaF KF) post-deposition treatment (PDT), we discuss interpret following issues: ① delamination thin films Na facilitates CuInSe2 formation...
Blistering-free poly-films were achieved by introducing carbon impurities, showing a proof-of-concept certified efficiency of 23.82% based on n-Si/SiO x /poly-Si contacts.
Isoelectronic cation substitution is a potential method to decrease the density of Cu‐Zn anti‐site defects in CZTSSe, thus improving V OC and performance CZTSSe solar cells. The proper doping concentration determined traditionally by trial error approach, costing much time, materials. How shorten time find big challenge for development Here, utilizing machine learning model, authors carry out an adaptive design predicting optimal ratio Mn 2+ ions cells improved cell efficiency. With help...
Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature, and then polycrystalline thin films of Cu2ZnSnS4 (CZTS) produced sulfurizing the precursors in a sulfur atmosphere temperature 550 °C for 3 h Fabricated CZTS characterized X-ray diffraction, energy dispersive spectroscopy, ultraviolet-visible-near infrared spectrophotometry, Hall effect system, 3D optical microscopy. The experimental results show that, when ratios [Cu]/([Zn] + [Sn]) [Zn]/[Sn] are 0.83...
Chalcopyrite-based solar cell deposited by solution processes is of great research interest because the ease fabrication and cost effectiveness. Despite initial promising results, most reported methods encounter challenges such as limited grain growth, carbon-rich interlayer, high thermal budget, presence secondary Cu-rich phases, which limit power conversion efficiency (PCE). In this paper, we develop a new technique to deposit large grain, carbon-free CISSe absorber layers from aqueous...
Cu(In, Ga)Se2 (CIGS) thin films with different thicknesses were deposited by the three-stage coevaporation process at a constant substrate temperature. The structure, morphology and optical electrical properties of solar cell performance studied. It was found that degree (1 1 2) preferred orientation becomes strong reducing thickness. Owing to reaction Cu2−xSe In Ga supplied in third stage, lot cavities existed upper part which thicker than µm. On thickness, band gap increased little...
We report cathodic exfoliation of bulk SnSe for a high yield (>90%) synthesis sub-5 nm scale quantum dots.
The fabrication of kesterite CZTSe solar cells via an electrodeposition method provides attractive approach for the low‐cost and environment‐friendly energy supply, yet highest conversion efficiency such (around 9%) is still far away from Cu‐based cells. Herein, a 10.54% efficient cell (0.28 cm 2 active sized area, without antireflection layer) developed by introducing electrodeposited Cu–Ge alloy layer at bottom metal precursor. It found that presence Ge element within film can promote...
Copper electroplating offering the potential to replace low‐temperature sintered silver pastes holds significant promise as a metallization process for silicon heterojunction (SHJ) solar cells (SCs). To unlock full of copper electroplating, it is crucial enhance contact properties between electroplated grids and indium tin oxide (ITO) films, addressing both resistivity physical adhesion. Herein, zinc‐assisted Fe 2+ system modify ITO film used, leading formation an In/Sn/SnO mixed‐metal...
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Abstract Wide‐bandgap Cu(In, Ga)Se 2 (CIGS) solar cells offer excellent thermal stability and significant potential for tandem applications. However, conventional CdS buffer layers exhibit poor band alignment with wide‐bandgap absorbers, resulting in severe interface recombination losses. Similarly, employing Zn(O,S) alone as a layer leads to insufficient surface inversion, limiting its effectiveness. Here, tailored engineering strategy is introduced using 30 nm Zn(O,S)/15 bilayer structure....
The high-quality development of the traditional Chinese medicine (TCM) industry is dependent on supportive policies and requires higher levels coordination integration. National local government must coordinate integrated TCM under modern governance principles. However, policy structure its impact have not been thoroughly explored from perspectives design empirical evidence. A TCMIDPs evaluation system was established using PMC-Index model to quantitatively analyze in China Shaanxi Province....