A5102712919- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Metal and Thin Film Mechanics
- solar cell performance optimization
- Carbon Nanotubes in Composites
- Boron and Carbon Nanomaterials Research
- Advanced Chemical Physics Studies
- Semiconductor materials and devices
- EEG and Brain-Computer Interfaces
- Atomic and Molecular Physics
- Evaluation Methods in Various Fields
- Electronic Packaging and Soldering Technologies
- Photovoltaic System Optimization Techniques
- Evacuation and Crowd Dynamics
- Astrophysics and Star Formation Studies
- Photochemistry and Electron Transfer Studies
- Laser Design and Applications
- Advanced Chemical Sensor Technologies
- Mass Spectrometry Techniques and Applications
- Network Traffic and Congestion Control
Hebei University
2018-2024
National University of Defense Technology
2024
Northwestern Polytechnical University
2023
Energy Foundation
2013-2022
Wuhan University of Technology
2022
NARI Group (China)
2019-2021
Nankai University
2017-2019
Beijing University of Technology
2011
University of California, Davis
2008-2009
University of Science and Technology of China
1999-2005
Abstract Defect state passivation and conductivity of materials are always in opposition; thus, it is unlikely for one material to possess both excellent carrier transport defect simultaneously. As a result, the use partial local contact strategies required silicon solar cells, which leads fabrication processes with technical complexities. Thus, that possesses good highly desirable photovoltaic (PV) cells. In this work, passivation‐conductivity phase‐like diagram presented...
Diverse defects in copper indium gallium diselenide solar cells cause nonradiative recombination losses and impair device performance. Here, an organic passivation scheme for surface grain boundary is reported, which employs agent to infiltrate the thin films. A transparent conductive passivating (TCP) film then developed by incorporating metal nanowires into polymer used cells. The TCP films have a transmittance of more than 90% visible nearinfrared spectra sheet resistance ~10.5 Ω/sq. This...
Novel ESCs is constructed by tunable energy band structure Zn(O,S) materials and incorporated in SHJ cells contributing to device performance.
The organic passivated carbon nanotube (CNT)/silicon (Si) solar cell is a new type of low-cost, high-efficiency cell, with challenges concerning the stability layer used for passivation. In this work, studied respect to internal and external (humidity) water content additionally long-term low moisture environments. It found that CNT/Si complex interface not stable, despite both passivation CNTs being stable on their own due providing an additional path molecules interface. With use simple...
The main hurdle to the upgradation of photovoltaic industry is large performance losses that tunnel oxide passivated contact (TOPCon) and silicon heterojunction (SHJ) cells have during cutting separating process for assembly shingle solar panels. Here, an organic solution with passivation effect prepared in situ by a non‐vacuum spraying process, which effectively compensates loss caused laser slicing technology. Both open‐circuit voltage ( V oc ) power conversion efficiency (PCE) are...
Using metal oxides to form a carrier-selective interface on crystalline silicon (c-Si) has recently generated considerable interest for use with c-Si photovoltaics because of the potential reduce cost. n-type oxides, such as MoO3, V2O5, and WO3, have been widely studied. In this work, p-type oxide, Cu-doped NiO (NiO:Cu), is explored transparent hole-selective contact n-Si. An ultrathin SiOx layer, fabricated by wet-chemical method (wet-SiOx), introduced at NiO:Cu/n-Si achieve tunnelling...
Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions. The implantation energy of the ions is 19 keV, dose between 1015 ions/cm2 1016 ions/cm2. c-BN annealed at a temperature 400 °C 800 °C. results show that surface resistivity lowered two to three orders, activation 0.18 eV.
The photoionization efficiency (PIE) spectra of metastable sulfur (S) atoms in the 1 D and S states have been recorded 73 350-84 950 cm(-1) frequency range by using a velocity-mapped ion imaging apparatus that uses tunable vacuum ultraviolet laser as ionization source. S(1 D) S) are produced 193 nm photodissociation CS2. observed PIE shows 35 autoionizing resonances with little or no contribution from direct into S+(4S 3/2)+e(-) continuum. Velocity-mapped images S+ at individual Rydberg used...
The goal of high efficiency in Si solar cells has been developed to a close limit by heterojunction (SHJ) scheme. further work should aim simplify its fabrication process for the reduction cost. In this study, scheme single‐side cell with hydrogenated microcrystalline silicon oxide emitter ((µc‐SiO x :H(p + )) and diffused back surface field (BSF) was presented, save flip wafers number vacuum chambers. device performance evolution performed AFORS‐HET simulation experiments. It is...
The innate inverse Auger effect within bulk silicon can result in multiple carrier generation. Observation of this is reliant upon low high-energy photon reflectance and high-quality surface passivation. In the photovoltaics industry, metal-assisted chemical etching (MACE) to afford black (b-Si) provide a reflectance. However, an industrially feasible cheaper technology conformally passivate outer-shell defects these nanowires currently lacking. Here, introduced infiltrate nanopores with...
Carbon/silicon heterojunctions provide a new perspective for silicon solar cells and in particular those made from carbon nanotubes (CNTs) have already achieved industrial‐level power conversion efficiency device size when using organic passivation back‐junction design. However, the current state of art geometry photovoltaics is interdigitated back contact (IBC) cell this has yet to be demonstrated CNT/Si due complexity fabricating required patterns. Herein, IBC‐CNT are via simple spin...
High-efficiency and low cost are always the goals pursued by photovoltaic industry. However, silicon-based heterojunction solar cells with highest efficiency of 26.7% based on a complex preparation process that inevitably results in an increase costs. Among them, indium tin oxide (ITO) film usually plays role antireflection, light transmission, transport charge carries, rather than one carrier-selective contacts p-n junction. In this article, ITO/Si cell is fabricated which ITO thin applied...
Abstract A novel solvothermal-reduction pathway (SRP) to nanocrystalline metal tellurides (MTe, M = Zn, Pb) has been established by the reaction of salts with tellurium in various solvents presence hydrazine hydrate(N2H4·H2O) as a reducing agent. Nanocrystallites different morphologies such cube particles and similar-rectangular flakes were obtained under mild conditions. The effects temperature on reactions investigated.