A5100426795- Advanced Optical Sensing Technologies
- CCD and CMOS Imaging Sensors
- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Advanced Wireless Communication Techniques
- Advanced MIMO Systems Optimization
- Advanced X-ray and CT Imaging
- Wireless Communication Networks Research
- Analytical Chemistry and Sensors
- Indoor and Outdoor Localization Technologies
- Advanced Wireless Communication Technologies
- Microbial Metabolic Engineering and Bioproduction
- Optical Imaging and Spectroscopy Techniques
- Phase-change materials and chalcogenides
- Nonlinear Optical Materials Studies
- Millimeter-Wave Propagation and Modeling
- PAPR reduction in OFDM
- Biofuel production and bioconversion
- Enzyme Catalysis and Immobilization
- Satellite Communication Systems
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Age of Information Optimization
- Ocular and Laser Science Research
- Advanced Fiber Laser Technologies
Samsung (South Korea)
2005-2023
The Ohio State University
2022-2023
Ulsan National Institute of Science and Technology
2019-2020
This article presents a 320 × 240 indirect time-of-flight (iToF) CMOS image sensor (CIS) with on-chip motion artifact suppression and background light cancelling (BGLC). The proposed iToF CIS uses backside-illuminated trident pinned photodiode (PPD) that assists charge transfer built-in lateral electric field for enhanced depth accuracy. To overcome the limitation of conventional exhibits artifact, we propose pseudo-four-tap (P4-tap) demodulation method alternate phase driving using two-tap...
We present an indirect Time-of-Flight (ToF) sensor based on standard pinned-photodiode (PPD) devices and design guides to pave the way for development of a ToF pixel operating at 100 MHz modulation frequency. The PPDs are established well as predominant 2-D color imagers in these days because their low noise characteristic, but slow transfer speed photo-generated electrons still prevents them from being employed 3-D depth imagers. Optimized PPD structure with no process modifications is...
An indirect time-of-flight (iToF) CMOS image sensor (CIS) is a device that provides depth as well two-dimensional shape of an object by measuring the phase difference reflected pulse trains light. Because iToF CIS offers high spatial resolution from scaled photodetectors such pinned photodiodes (PPD) [1] or photogates [2], accuracy, it advantageous for gesture recognition with higher accuracy compared conventional 2D imagers. Even though CISs have been limited to indoor applications, gaming,...
Al0.85Ga0.15As0.56Sb0.44 has recently attracted significant research interest as a material for 1550 nm low-noise short-wave infrared (SWIR) avalanche photodiodes (APDs) due to the very wide ratio between its electron and hole ionization coefficients. This work reports new experimental excess noise data thick PIN NIP structures, measuring low at significantly higher multiplication values than previously reported (F = 2.2 M 38). These results disagree with classical McIntyre theory, which...
We provide an overview of our progress on the development linear mode avalanche photodiodes (LmAPDs) InP substrates using antimony (Sb)-based multipliers for short-wavelength infrared (SWIR) spectral region. identify key figures merit LmAPDs to higher sensitivity and speed applications like light detection ranging (LiDAR) remote sensing. discuss design separate absorption, charge, multiplication (SACM) APDs that are used narrow gap absorption. summarize results impact ionization, gain, dark...
Samsung SDI has developed 2.6-inch full color VGA Active Matrix Organic Light-Emitting Diode (AMOLED) display with the world's highest resolution of 302ppi using Laser Induced Thermal Imaging (LITI) method top emission structure. A voltage compensating pixel circuit 2μm design-rule in low-temperature poly-Si (LTPS) thin film transistors (TFTs) was introduced to compensate variation threshold (Vth) order improve image quality. Moreover, an aperture ratio ∼40% obtained for each even though...
In large scale cellular systems, it is needed to simultaneously support a massive number of users with low latency. However, in conventional random access performance severely degraded as the increases due frequent collisions. Recently, compressed sensing based touted good solution improve systems. To investigate latency we model process by Markov chain, and derive successful probability expected on steady state analysis.
To realize wireless communications in tera-hertz (THz) spectrum, the design of transmit signal with low peak-to-average power ratio (PAPR) is essential due to poor amplifier (PA) efficiency this extremely high frequency band. Although discrete Fourier transform (DFT) spread orthogonal frequency-division multiplexing (DFT-s-OFDM) a viable solution reduce PAPR than conventional multiple access (OFDMA), choice between these two schemes downlink reveals fundamental tradeoff and multiuser...
Even though the 5G new radio (NR) system at mmWave frequencies provides large bandwidth and user data rates, it suffers severely from blockages absorption losses, making its coverage limited to few meters. A wide range of technologies schemes are being investigated overcome this issue high frequencies. Reconfigurable intelligent surfaces (RISs) is one among them. An RIS consists a panel that reflects incident signal towards receiver, adding an extra path, thereby, aiding in extending cell...
Background doping polarity type is a critical parameter for avalanche photodiode performance. We demonstrated technique using capacitance-voltage (CV) measurements on double mesa structures with p-i-n or n-i-p homojunctions to determine the of unintentionally doped intrinsic (uid) region. CV scale size and enable design flexibility in producing variable top bottom diameters. designed tested AlGaAsSb AlInAsSb performed at varying temperatures. Measurements varied mesa, indicating p-n junction...
This paper presents a new physical random access channel (PRACH) preamble design suitable for the next-generation 6G cellular communication systems operating in sub-Terahertz (THz) bands. In these extremely high frequency channels, subcarrier spacing (SCS) of orthogonal frequency-division multiplexing (OFDM) based waveform should be significantly increased at least to MHz-level mitigate severe effect phase noise, thus resulting OFDM symbol length several hundreds nano-seconds. Under this...