Abstract The fast development of mid-wave infrared photonics has increased the demand for high-performance photodetectors that operate in this spectral range. However, signal-to-noise ratio, regarded as a primary figure merit detection, is strongly limited by high dark current narrow-bandgap materials. Therefore, conventional such HgCdTe require cryogenic temperatures to avoid excessively current. To address challenge, we report an avalanche photodiode design using photon-trapping structures...

Lithium niobate on insulator (LNOI) has become an intriguing platform for integrated photonics applications in communications, microwave photonics, and computing. Whereas, devices including modulators, resonators, lasers with high performance have been recently realized the LNOI platform, high-speed photodetectors, essential building block photonic circuits, not demonstrated yet. Here, we demonstrate first time, heterogeneously modified uni-traveling carrier photodiodes a record-high...

High sensitivity avalanche photodiodes (APDs) operating at eye-safe infrared wavelengths (1400–1650 nm) are essential components in many communications and sensing systems. We report the demonstration of a room temperature, ultrahigh gain ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mi>M</mml:mi> <mml:mo>=</mml:mo> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>278</mml:mn> </mml:mrow> </mml:math> , <mml:mi>λ</mml:mi> <mml:mn>1550</mml:mn> <mml:mspace...

We report the gain, noise, and dark current characteristics of random alloy Al0.79In0.21As0.74Sb0.26 (hereafter AlInAsSb)-based avalanche photodiodes (APDs) on InP substrates. observe, at room temperature, a low excess noise corresponding to k value (ratio impact ionization coefficients) 0.018 density 82 μA/cm2 with gain 15. These performance metrics represent an order magnitude improvement k-value over commercially available APDs InAlAs multiplication layers grown This material is also...

We report on the demonstration of Al0.85Ga0.15As0.56Sb0.44 (hereafter, AlGaAsSb) avalanche photodiodes (APDs) with a 1000 nm-thick multiplication layer. Such thick AlGaAsSb device was grown by digital alloy technique to avoid phase separation. The current-voltage measurements under dark and illumination conditions were performed determine gain for APDs. highest ∼ 42, initiation occurred at 21.6 V. breakdown voltage found be around −53 measured current densities bulk surface components 6.0...

We demonstrate low noise random alloy (RA) Al0.85Ga0.15AsSb (hereafter AlGaAsSb) avalanche photodiodes (APDs) nearly lattice-matched to InP substrates. In contrast digital (DA), RAs are manufacturable due the ease of growth. The 910 nm-thick RA AlGaAsSb was grown at a temperature around 450 °C mitigate phase separation by suppressing surface mobility adatoms. high quality material verified x-ray diffraction, Nomarski, and atomic force microscope images. Capacitance–voltage measurement found...

Digital alloy and random Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.85</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.15</sub> As xmlns:xlink="http://www.w3.org/1999/xlink">0.56</sub> Sb xmlns:xlink="http://www.w3.org/1999/xlink">0.44</sub> avalanche photodiodes (APDs) exhibit low excess noise, comparable to Si APDs. Consequently, this material is a promising multiplication layer candidate for separate absorption, charge,...

High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a wide range of applications, including telecommunications, data centers, spectroscopy, imaging, light detection and ranging, medical diagnostics, quantum applications. This paper reports antimony-based separate absorption, charge, multiplication structure APDs on InP substrates. Al0.7In0.3As0.79Sb0.21 is for the multiplier region, InGaAs as absorber. The excess noise comparable that silicon APDs;...

Digital alloy Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.85</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.15</sub> As xmlns:xlink="http://www.w3.org/1999/xlink">0.56</sub> Sb xmlns:xlink="http://www.w3.org/1999/xlink">0.44</sub> , random and xmlns:xlink="http://www.w3.org/1999/xlink">0.79</sub> In xmlns:xlink="http://www.w3.org/1999/xlink">0.21</sub> xmlns:xlink="http://www.w3.org/1999/xlink">0.74</sub>...

The InGaAs lattice-matched to InP has been widely deployed as the absorption material in short-wavelength infrared photodetection applications such imaging and optical communications. Here, a series of digital alloy (DA)-grown InAs/GaAs short-period superlattices were investigated extend spectral range. scanning transmission electron microscopy, high-resolution X-ray diffraction, atomic force microscopy measurements exhibit good quality, while photoluminescence (PL) spectra demonstrate wide...

Al0.85Ga0.15As0.56Sb0.44 has recently attracted significant research interest as a material for 1550 nm low-noise short-wave infrared (SWIR) avalanche photodiodes (APDs) due to the very wide ratio between its electron and hole ionization coefficients. This work reports new experimental excess noise data thick PIN NIP structures, measuring low at significantly higher multiplication values than previously reported (F = 2.2 M 38). These results disagree with classical McIntyre theory, which...

For short-wavelength infrared (SWIR) avalanche photodiodes, a separate absorption, charge, and multiplication design is widely used. AlInAsSb on an InP substrate potential layer with lattice match to absorber candidates across the SWIR. Our new measurements demonstrate that promising multiplier candidate relatively low dark current density of 10−4 A/cm2 at gain 30; high gain, measured up 245 in this study; large differentiation electron hole ionization leading excess noise, be 2.5 30. These...

We provide an overview of our progress on the development linear mode avalanche photodiodes (LmAPDs) InP substrates using antimony (Sb)-based multipliers for short-wavelength infrared (SWIR) spectral region. identify key figures merit LmAPDs to higher sensitivity and speed applications like light detection ranging (LiDAR) remote sensing. discuss design separate absorption, charge, multiplication (SACM) APDs that are used narrow gap absorption. summarize results impact ionization, gain, dark...

Transparent amorphous germanium (a‐Ge) has emerged as a promising material for engineering nanostructures and metasurfaces, offering significant potential enhancing the performance of photonic devices in short‐wavelength infrared (SWIR) spectrum. Herein, successful application a‐Ge metasurfaces with truncated pyramid profile to enhance external quantum efficiency (EQE) digital alloy Al 0.3 InAsSb p–i–n photodiode across broad‐wavelength range SWIR is presented. The experimental findings...

Digital alloy Al0.85Ga0.15As0.56Sb0.44 and random Al0.79In0.21As0.74Sb0.26 avalanche photodiodes with a 1-μm multiplication layer exhibit low excess noise under 543-nm laser illumination comparable to Si photodiodes. This has motivated study of the optical characteristics these materials. The absorption coefficients complex refractive indices were extracted via variable-angle spectroscopic ellipsometry. Features three semiconductor fitting approaches are compared, Kramers–Kronig-consistent...

We report the frequency response of Al0.3InAsSb/Al0.7InAsSb nBn photodetectors. The 3-dB bandwidth devices varies from ∼ 150 MHz to 700 with different device diameters and saturates bias voltage immediately after turn on. A new equivalent circuit model is developed explain behavior simulated based on agrees well microwave scattering parameter measurements. analysis reveals that limiting factor photodetector large diffusion capacitance caused by minority carrier lifetime area. Additionally,...

We report the noise characteristics of an AlInAsSb avalanche photodiode (APD) on InP substrate. observe low excess corresponding to impact ionization coefficient ratio (k) 0.012, and a dark current density 55 μA/cm2 at gain 10 room temperature. The performance commercial APDs substrates is limited by state art (SOA) current. combination leads significant improvement compared provides potential candidate for noise, SOA, near-infrared applications. When combined in separate absorber, charge...

We present gain, dark current and excess noise characteristics of PIN Al_0.85Ga_0.15As_0.56Sb_0.44 (hereafter AlGaAsSb) avalanche photodiodes (APDs) on InP substrates with 1000 nm thick multiplier layers. The AlGaAsSb APDs were grown by molecular beam epitaxy using a digital alloy technique (DA) to avoid phase separation. Current-voltage measurements give peak gain ~ 42, breakdown voltage – 54.3 V, density at 10 145 &mu;A/cm². Excess...

Avalanche photodiodes (APDs) are critical components for a variety of remote sensing applications, particularly 3D imaging using light detection and ranging (LiDAR). APDs can provide higher sensitivity faster response times than traditional PIN diodes due to their internal gain. To apply LiDAR gas monitoring including greenhouse gases, need be sensitive further into the infrared Si detect. This work investigates an absorber that is 2 &mu;m compatible with APD. A separate absorption, charge,...

The performance of the photodetector is often primary limiting factor affecting a free space communication or LiDAR system's sensitivity. Avalanche photodiodes (APDs) can be used to improve signal noise ratio (SNR) compared conventional <i>p-i-n</i> photodiodes. Our study focuses on demonstrating an APD operating in eye-safe short-wave infrared (SWIR) spectrum (&gt;1400 nm) with high multiplication (<i>M</i>&gt;1200) and low excess (<i>F</i>&lt;7 at <i>M</i>=200) room temperature. This...

The digital alloy (DA) growth technique has been widely reported to implement band structure engineering for deterministic optical and electronic properties overcome limitations imposed by miscibility gaps. Random (RA) InGaAs lattice-matched InP with a bandgap of 0.74 eV is used as the absorption material photodetectors in short-wavelength infrared spectral range. In this work, grown on substrates alloy, short-period InAs/GaAs superlattices, six monolayer periodic thickness extend its...

The thermal properties of modified uni-traveling carrier (MUTC) photodiode flip-chip bonded to AlN and diamond are simulated. impedance InGaAs is the primary source internal heating. An n-down epitaxial structure designed improve dissipation. Compared conventional p-down configuration, MUTCs diamond, or submounts achieved 145% 110% improvement in dissipated power density at failure, respectively. improved characteristics presage higher RF output before failure.

Summary Microseismic monitoring can provide important parameters for the evaluation of fracturing, water/gas injection production, and gas storage, etc. in oil energy sector. Due to tiny magnitude huge number microseismics, their signals are generally drowned out background noise; thus, traditional seismic location fails, which highlights large arrived amplitude. Therefore, methods probability statistics have be used identify analyze microseismicity. In principle denoise our vector scanning,...

We have demonstrated InGaAs/AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes. The gain, excess noise, temperature-dependent dark current been characterized. APDs were grown on semi-insulating InP substrates, which is beneficial for bandwidth improvement compared to AlInAsSb GaSb substrates.

Avalanche photodiodes (APDs) are used in high-speed data communication and light detection ranging (LIDAR) systems due to their high sensitivity speed. However, InAlAs InP based APDs have relatively excess noise because they similar electron hole ionization coefficients (&alpha; &beta; respectively). Here, we report on an ultra-low material Al_0.85Ga_0.15As_0.56Sb_0.44 (hereafter AlGaAsSb) with a k value (&beta;/&alpha;) of 0.01. The multiplication...