A5101969387- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Advanced Optical Sensing Technologies
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Semiconductor materials and devices
- Radiation Detection and Scintillator Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Ga2O3 and related materials
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Chalcogenide Semiconductor Thin Films
- Neural Networks and Reservoir Computing
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Semiconductor Lasers and Optical Devices
- Network Security and Intrusion Detection
- Terahertz technology and applications
- Infrared Target Detection Methodologies
- Radiation Effects in Electronics
- Visual Attention and Saliency Detection
- Advanced Antenna and Metasurface Technologies
- Silicon Carbide Semiconductor Technologies
Tsinghua University
2012-2024
Nanjing University of Science and Technology
2024
University of Virginia
2018-2021
McCormick (United States)
2019
Synopsys (United States)
2018-2019
DEVCOM Army Research Laboratory
2019
Ansys (United States)
2018-2019
Southeast University
2013
State Key Laboratory on Integrated Optoelectronics
2012-2013
Jiangsu Province Institute of Quality & Safety Engineering
2013
The metaverse is attracting considerable attention recently. It aims to build a virtual environment that people can interact with the world and cooperate each other. In this survey paper, we re-introduce in new framework based on broad range of technologies, including perception which enables us precisely capture characteristics real world, computation supports large requirement over large-scale data, reconstruction builds from one, cooperation facilitates long-distance communication...
The rapid development of artificial intelligence requires faster information processing capabilities. However, the traditional von Neumann architecture is limited by transmission speed. combination neuromorphic structure and photon calculation will break this limitation effectively improve efficiency. Here, we demonstrate an optical synaptic device based on GaN/AlN periodic that exhibits strong persistent photoconductivity in ultraviolet (UV) detection, which caused polarization...
Optical neural networks are at the forefront of computational innovation, utilizing photons as primary carriers information and employing optical components for computation. However, fundamental nonlinear device in is barely satisfied because its high energy threshold poor reconfigurability. This paper proposes demonstrates an sigmoid-type computation mode Vertical-Cavity Surface-Emitting Lasers (VCSELs) biased beneath threshold. The programmable by simply adjusting injection current....
InAlAs digital alloy avalanche photodiodes exhibit lower excess noise than those fabricated from conventional random material. Experiment and Monte Carlo simulation both show that relative to the ionization probability for electrons is slightly while of holes greatly suppressed. We propose suppression carrier in alloys happens because creation minibands localize carriers. The difference between conduction bands valence comes scattering path.
We have successfully implemented green and red light-emitting diodes (LEDs) based on InGaN/GaN quantum dots (QDs) grown by controlling the process of growth interruption method using metal organic vapor phase epitaxy (MOVPE). It is found that three-step underlying superlattice structure are beneficial for achieving greater indium incorporation in InGaN QDs. As a result, LEDs with electroluminescence (EL) peak energies 2.28 eV at 20 mA 1.70 80 mA, respectively, demonstrated. The EL emission...
Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace the bulky and fragile photomultiplier tube (PMT) for weak light detection. However, performance of most available APDs is barely satisfactory compared that PMTs because inter-valley scattering. Here, we demonstrate PMT-like APD based on GaN/AlN periodically stacked-structure (PSS), in which electrons encounter much less scattering during transport than holes. Uni-directional avalanche takes place...
Digital alloy AlInAsSb avalanche photodiodes exhibit low excess noise comparable to those fabricated from Si. The electron and hole ionization coefficients are critical parameters for simulation analysis of high-sensitivity receivers. We report using a mixed injection technique that employs measurement the gain different incident wavelengths algorithm.
Artificial intelligence (AI) is escalating rapidly in most applications nowadays. However, the current artificial hardware system couldn’t meet demand of AI considering energy and latency budget. The imaging a crucial example, wherein more than 90% data generated by sensors redundant processed indiscriminately for like classification recognition. Thus, lots time are wasted irrationally. Therefore, it necessary to develop novel insensor computing architectures mimicking functions human...
The InGaAs lattice-matched to InP has been widely deployed as the absorption material in short-wavelength infrared photodetection applications such imaging and optical communications. Here, a series of digital alloy (DA)-grown InAs/GaAs short-period superlattices were investigated extend spectral range. scanning transmission electron microscopy, high-resolution X-ray diffraction, atomic force microscopy measurements exhibit good quality, while photoluminescence (PL) spectra demonstrate wide...
We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar excess noise, k∼0.2, as InAlAs APDs InP.
The unprecedented wide bandgap tunability (∼1 eV) of AlxIn1-xAsySb1-y lattice-matched to GaSb enables the fabrication photodetectors over a range from near-infrared mid-infrared. In this paper, valence band-offsets in with different Al compositions are analyzed by tight binding calculations and X-ray photoelectron spectroscopy measurements. observed weak variation band offsets is consistent lack any minigaps band, compared conduction band.
Recently, InAlAs digital alloys have been shown to exhibit unique electronic dispersion properties, which can be used make low-noise avalanche photodiodes. In this paper, the strain effect is analyzed for its impact on band structure of alloy. Simulation using a tight binding model that includes yields bandgap energies are consistent with experimental results. The would larger without strain. addition, positive relationship has found between minigaps alloy and offset bulk InAs AlAs at same...
Silicon carbide Schottky diodes with thick i-regions are reported. Compared previously reported p-i-n photodiodes, a shift of the absorption peak from 270 nm to 350 was observed. The responsivity curves diode modeled and compared experimental data.
In ultra-high sensitive APDs, a vibrate of temperature might bring fatal decline the multiplication performance. Conventional method to realize temperature-stable APD focuses on optimization device structure, which has limited effects. While in this paper, solution by reducing carrier scattering rate based an GaN/AlN periodically-stacked structure (PSS) is brought out improve stability essentially. Transport property systematically investigated. Compared with conventional GaN homojunction...
The spin and optical polarization based on a coupled InGaN/GaN quantum well (QW) dots (QDs) structure is investigated. In this structure, spin-electrons can be temporarily stored in QW, injection from the QW into QDs via spin-conserved tunneling enabled. Spin relaxation suppressed owing to small energy difference between initial state final states QDs. Photoluminescence (PL) time-resolved photoluminescence (TRPL) measurements are carried out spin-injection -detection. Owing mechanism plays...
A theoretical study on interfacial ionization in the AlN/GaN periodically stacked structure (PSS) avalanche photodiode (APD) has been carried out to explain why experimental electron coefficient is higher than that simulation result. Full band structures for GaN and AlN are combined at heterojunction interface of PSS APD calculation suitable initial state AlN. Many states exist Γ valley AlN, where scattering rates restricted ultimately result a coefficient.
We report Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> InAsSb avalanche photodiodes grow as ternary-binary and binary-binary digital alloys. Their characteristics of ideality factor, activation energy, temperature-dependent excess noise, temperature stability, impact ionization coefficients are compared.
Recently, we have verified an inter-valley scattering free avalanche photodiode (APD) by using GaN/AlN periodically stacked structure (PSS). High linear-mode gain and extremely low excess noise been achieved in a prototype GaN (10 nm)/ AlN nm) PSS APD. In this letter, device optimization is investigated theoretically. Gains noises are simulated APDs with different periodical structures periods. It found that the can be optimized alternatively proper design of thickness layer occupancy....
A separated absorption and multiplication GaN p—i—p—i—n avalanche photo-diode (APD) with a 25 μm diameter mesa is proposed demonstrated. Compared to the conventional p—i—n APD, structure reduces probability of premature micro-plasma breakdown, raises gain from 30 400 work voltage 93 48 V. The temperature test set on APDs, positive coefficient mV/K shows that breakdown happens in devices. peak responsivity APDs 0.11 A/W under wavelength 358 nm.
The dark current of a photodetector is key parameter for high-sensitivity optical receivers. We report low-dark-current, triple-mesa avalanche photodiodes that have ~50 times lower than conventional single-mesa devices, and suppress surface leakage. tolerances photodiode parameters are presented.
A series of $I\phantom{\rule{0}{0ex}}I\phantom{\rule{0}{0ex}}I\ensuremath{-}V$ alloy-based avalanche photodiodes are recently seen to demonstrate superior performance such as low excess noise, but the origin behavior is not completely understood. The authors use atomistic modeling material and transport properties deconstruct underlying physical mechanisms, which attributed a combination engineered minigaps, increased effective mass, spin-orbit coupling. These attributes selectively limit...
3D band structure-based Monte Carlo simulations have been utilized to simulate InAlAs digital alloy avalanche photodiodes. The simulated current–voltage curve and excess noise factor fit well with experimental results. Ionization coefficients calculated by the technique were incorporated into recurrence model, which is easier implement requires less computation time.