Abstract Counterfeit electronics are a growing problem for the electronic information industry worldwide, so developing unbreakable security tags is crucial to ensure trustworthiness and traceability of electronics. Traditional anticounterfeiting trace solutions rely on reproducible deterministic processes additional labels, which can still be copied or faked by counterfeiters. Herein, physical unclonable functions enabled spontaneously formed plasmonic core–shell nanoparticles electrodes...

Abstract Physical unclonable function (PUF) has emerged as a unique physical'fingerprint' that is inherently difficult to replicate. It shows tremendous application value in various hardware security areas such identity authentication, chip anticounterfeiting, communication encryption, blockchain, etc. However, with the rapid development of 3D nanoprinting, classical PUFs constructed disordered micro‐nanostructures face threats from physical cloning attacks. Herein, this study proposes and...

The increasing security threat is a serious challenge to the internet of things (IoT). Hardware‐based primitive an essential and powerful way protect IoT devices from various attacks. But most current hardwares are based on macrophysical features, which usually produced by reproducible deterministic processes can be copied counterfeiters. Herein, physical unclonable function (PUF) with high robustness intrinsic random micro‐/nanostructures electronic packages proposed thereby demonstrating...

We demonstrate an optically pumped single-photon emitter operating at room temperature based on disk-shaped GaN/AlN quantum dots embedded in the nanowire (dot-in-wire) structure, which can act as optical source for future information technologies. The disk-like geometry of dot (QD) leads to well-defined strain distribution and controllable properties QD is revealed by theoretical calculations using a continuous elasticity model. Site-controlled dot-in-wires are grown selective area growth...

A theoretical study on interfacial ionization in the AlN/GaN periodically stacked structure (PSS) avalanche photodiode (APD) has been carried out to explain why experimental electron coefficient is higher than that simulation result. Full band structures for GaN and AlN are combined at heterojunction interface of PSS APD calculation suitable initial state AlN. Many states exist Γ valley AlN, where scattering rates restricted ultimately result a coefficient.

Recently, we have verified an inter-valley scattering free avalanche photodiode (APD) by using GaN/AlN periodically stacked structure (PSS). High linear-mode gain and extremely low excess noise been achieved in a prototype GaN (10 nm)/ AlN nm) PSS APD. In this letter, device optimization is investigated theoretically. Gains noises are simulated APDs with different periodical structures periods. It found that the can be optimized alternatively proper design of thickness layer occupancy....

Near-infrared (NIR) single-photon source plays a key role in wide range of applications quantum technology. In particular, communication, the NIR wavelength operation perfectly matches relatively low-attenuation transmission window optical fiber, which attracts more and research interest. Here, we report room temperature emission from single point defects aluminum gallium nitride (AlGaN) film. The obtained covers 720 to 930 nm exhibits highly linear polarization high photon brightness. This...

AlGaN-based deep ultraviolet (DUV) light emitting diodes (LEDs) are irradiated by fast neutrons, with optical and electrical properties analyzed in detail. Significant enhancement of output power is observed under neutron irradiation fluences 6.0 × 1012 1.5 1013 cm−2. However, the device exhibits performance degradation as fluence increases to 1.0 1014 As previous observations limited degradation. Further analysis reveals that there exist two different competitive mechanisms radiation effect...

The properties of photonic-crystal (PhC) cavity modes are investigated for applications in single-photon emitters. Hexagonal-lattice PhC H1 and L3 cavities fabricated a GaAs slab containing InAs quantum dots. characterized by polarization-dependent micro-photoluminescence measurements. Split nearly degenerate dipole demonstrated the same batch samples, single mode with specific polarization is clearly observed. results reveal that exhibits fairly excellent performance even remarkable...

We report the behaviour of dark current and gain characteristics Si- GaN-based avalanche photodiodes (APDs) irradiated by fast neutrons. For Si-based APDs, increases with increase neutron fluence, indicating that property has been seriously affected. The values APD slightly after irradiation a low fluence 1.0 × 1012 cm−2, while device exhibits degradation as to 1013 cm−2 or even above at high reverse bias voltage, unlike previous studies where only was observed. steep when approaching...

Infrared (IR) photodetectors have been widely used in the fields of both civil and military applications such as environmental monitoring, medical diagnostics, satellite remote sensing missile guidance, etc. In conventional large scale focal plane array (FPA) IR imaging, thermal mismatch between silicon readout circuits will inevitably lead to degradation device performance. An up-conversion photodetector, which converts photons short-wavelength for Si-CCD-based can avoid caused by...

This paper reports a plasma post-treatment technique to improve the performance of GaN ultraviolet avalanche photodiodes (APDs). A BCl3-based post-etching was developed smooth roughened surface after inductively-coupled-plasma etching. Atomic-scale roughness around 0.278 nm rms and photoluminescence intensity more than doubled were achieved post-treatment. The smoothing applied fabrication process double-mesa structure APDs grown on sapphire substrate. Compared non-treated APDs, post-treated...

Laser-assisted simulation is a fast, simple, and effective method for studying dose-rate effects. However, in some compound radiation environments (e.g., the coexistence of transient <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\gamma $ </tex-math></inline-formula> -rays neutrons), effectiveness laser has not been studied. This article investigates feasibility laser-assisted effects neutron-irradiated...

Recently the GaN/AlN multi-quantum-well structure avalanche photodiode (MAPD) has been demonstrated with PMT-like multiplication gain larger than 1E4. In this work, photocurrent of MAPD investigated and negative differential conductance (NDC) is found in characteristic MAPD. Through self-consistent calculation, conduction band discrete energy states each quantum well layer have obtained for The drop down align edge absorption around NDC peak voltage, so feature proposed as resonant tunneling...

APD based on AlN/GaN periodically stacked structure (PSS) has been proposed to obtain a high ionization coefficient ratio of more than 100 and record linear-mode gain 104. Here the full p-i-p-i-n SAM PSS is simulated discuss influence polarization effect which cannot be ignored. The dependence device performances parameters in studied detail, will helpful for design optimization APD.

The influence of superlattice periods and well doping on the band structure distribution electrons for III-nitride intersubband photodetectors are theoretically studied. It is found that there more wells populated with increase concentration. This knowledge beneficial to improve absorption efficiency, providing theoretical supports optimal design photodetectors.

Inductively coupled plasma (ICP) is widely used in dry etching of III‐nitride materials, wherein the parameters GaN and AlN are very different. Herein, ICP process GaN/AlN periodically stacked structure (PSS) for avalanche photodiode (APD) fabrication intensively studied optimized. The flow rate ratio Cl 2 /BCl 3 /Ar plasma, bias voltage, GaN‐to‐SiN x selectivity optimized to achieve excellent surface morphology nearly vertical sidewalls. It found that etched roughness material significantly...

&lt;sec&gt; The photodetection potential applications of III-nitride semiconductor are not only restricted in the ultraviolet range, but also extended to infrared and even terahertz wave range through intersubband transition (ISBT) process between quantum-confined electronic states. large conduction band offset (~1.75 eV for GaN/AlN heterostructures) strong electron-phonon interaction these materials enable ISBT photodetectors operate with ultrahigh speed near-infrared telecommunication...

The high-gain photomultiplier tube (PMT) is the most popular method to detect weak ultra-violet signals which attenuate quickly in atmosphere, although vacuum makes it fragile and difficult integrate. To overcome disadvantage of PMT, an AlN/GaN periodically–stacked-structure (PSS) avalanche photodiode (APD) has been proposed, finally achieving good quality high gain low excessive noise. As there a deep г valley only conduction band both GaN AlN, electron transfers suffering less scattering...

Polarization is an important property of GaN/AlN multi-quantum-well (MQW) avalanche diode (MAPD) but has been ignored in recent analyses MAPD to simplify the Monte Carlo simulation. Here, photocurrent characteristics are investigated understand role polarization field MQW structure. Carrier multiplication AlN/GaN found as a result interfacial impact ionization not much helped from external instead considerably contributed by field. In addition, movement ionized electrons out quantum well...

The structure parameters of III-nitride double-step intersubband photodetectors are theoretically analyzed to ensure efficient extraction photo-excited electrons. results indicate that the polarization field in barrier layer behaves sensitive thickness well and step layers. In addition, reducing Al mole composition or properly increasing its will be helpful enhance electrons tunneling. This knowledge is beneficial design terahertz with high efficiency.

GaN APD with periodic ultra-thin AlN interlayers in multiplication region has been proposed to obtain a high gain at constant voltage mode. The influence of the on process was numerically simulated and analyzed. results predict that contains three different stages increase reverse voltage. experimental agree simulation very well 6×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> mode obtained.

Dual-band photodetectors operating within infrared (IR) and ultraviolet (UV) wavelength ranges are highly applicable for tracking surveillance of targets applications. Because the large band-gap conduction band offset, nitride heterostructures good candidates monolithically integrated IR UV dual-band detection. However, suffering from considerable lattice mismatch strong polarization effect heterostructures, with complicated structures increase difficulties material epitaxy device...