A5029711096- Silicon Carbide Semiconductor Technologies
- Advanced DC-DC Converters
- Electromagnetic Compatibility and Noise Suppression
- Multilevel Inverters and Converters
- Advancements in Semiconductor Devices and Circuit Design
- Electrostatic Discharge in Electronics
- Induction Heating and Inverter Technology
- Power Line Inspection Robots
- Magnetic Field Sensors Techniques
- Semiconductor materials and devices
- Advanced Power Amplifier Design
Aalborg University
2023-2025
Recent developments within the field of medium voltage wide-bandgap semiconductor devices are drawing attention from both researchers and industries due to demanding requirements for more efficient high-power energy conversion. The rapid development has entailed an increased awareness negative impact rate change in voltage, d <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i> /d xmlns:xlink="http://www.w3.org/1999/xlink">t</i> , its...
It is commonly assumed that power semiconductor switching losses are the same for high-side and low-side devices in a half-bridge module. However, this paper reveal SiC MOSFET medium voltage module exhibits over 40 % higher energy compared to MOSFET. The loss imbalance attributed parasitic gate capacitance module, which contributes equivalent Miller capacitance. A physics-based dissipation model therefore proposed, distinguishing between dissipation. Double pulse testing demonstrates...
Sustained Miller region oscillations are observed during turn-on of the high-side SiC MOSFET in a half-bridge 10kV power module double pulse testing at 6kV, 70A. The analyzed and cause is identified as positive feedback loop forming between common source inductance equivalent capacitance, with current path through parasitic capacitive couplings grounded baseplate. Using custom manufactured prototype medium voltage modules experimentally validated mitigation strategy proposed, demonstrating...
A 3D printed ceramic baseplate-less power module structure with integrated micro-channels for liquid cooling is presented. The main benefit that parasitic capacitive couplings are removed in comparison conventional packaging. Switching waveforms at 60 kV/us exhibit limited overshoot while good thermal performance maintained.
Industrial heating processes operating at frequencies of multiple MHz often have low efficiencies due to the use vacuum-tube technology. This can be improved using inverters based on wide band gap materials, but requires special attention in topology selection achieve high efficiency a range conditions. paper investigates merits Class E push-pull resonant inverter for induction heating. A prototype SiC MOSFET power module is manufactured and experimentally validated system with commercial...
Capacitive parasitic couplings in power electronics systems are gaining increased attention due to the emergence of wide bandgap devices, with main challenges being faster switching speeds and operating voltage capabilities causing slew rate (dv/dt). The high dv/dt induces capacitive displacement currents through channel semiconductor effectively reducing speed, resulting an increase Volt-Ampere integral, incurring surplus energy dissipation. This paper highlights that module gate side...
Previous research reports that the parasitic capacitance of filter inductors can result in larger capacitive currents and cause increased losses transistors. However, previous only discussed with floating cores frames, where high-power medium to high-voltage are practically required have grounded frames according standards. To fill gap, this paper aims provide a comprehensive analysis extra switching caused by frames. Using 10 kV SiC MOSFETs an accurate digital model double-pulse-test (DPT)...