A 30-Gb/s three-level pulse amplitude modulation (PAM-3) transceiver is designed with a one-tap tri-level decision feedback equalizer (DFE) to realize high-speed dynamic random access memory (DRAM) interface via the 28-nm CMOS process. 1.5-bit/pin bit efficiency achieved by encoding and decoding 3-bit data in two unit intervals (UIs). The half-rate PAM-3 transmitter modulates single-ended pseudorandom binary sequence (PRBS) 7/15 using low-power logic an output driver. receiver achieves error...

This paper proposes a 2.7 Gb/s referenceless transceiver with weighted PFD for frequency detection of random signals. A single loop CDR is also proposed to overcome the disadvantages dual CDR. The ANSI 8b/10b encoder & decoder scrambler, serializer de-serializer, and output driver pre-emphasis are included in architecture DisplayPort v1.1a. jitter generated clock at Tx PLL 3.28 psrms 1.2 V supply. eye opening transmitter 3 m cable 0.54 UI. measured recovered 1.57 psrms, BER less than 10-12....

Abstract The exponential increase in demand for global energy intake day-to-day life directs us to look a green and cost-effective generation storage alternative. India being fastly developing nation with vast population, requires the alternative resource meet up deficit an eco-friendly manner be self-reliant demands. This review aims compile assess developments materials research from Indian prospects. Therefore, this paper discusses India’s scenario by understanding fundamental concepts of...

In this work, electrohydrodynamic (EHD) jetting phenomena were observed for three different types of bottom electrode (plane, hole, pin) at constant back pressure condition the reservoir. Especially, we have focused on measurement and numerical prediction onset voltage pulsating Taylor cone jetting, changing glass capillary nozzle diameter (outer diameter: 16–47 μm), hydrostatic head in reservoir, distance between to provide design information EHD multinozzle head.

A 1-V 10-Gb/s/pin single-ended transceiver with a controllable active inductor-based output driver and adaptively calibrated cascaded-equalizer infinite impulse response finite filters for post-LPDDR4 interface in 65-nm CMOS technology is proposed. The proposed removes the received long-tail inter symbol interference help of an IIR filter while coefficients are calibrated. In addition, ground-terminated data converted to differential pair by input buffer using reference voltage. transmitter...

This paper presents the silicon-proven design of a novel on-chip network to support guaranteed traffic permutation in multiprocessor system-on-chip applications. The proposed employs pipelined circuit-switching approach combined with dynamic path-setup scheme under multistage topology. enables runtime path arrangement for arbitrary permutations. offers guarantee permuted data and its compact overhead benefit stacking multiple networks. A 0.13-μ m CMOS test-chip validates feasibility...

Bandwidths of memory interfaces have been increased tremendously to enable high-data throughput while maintaining single-ended signaling and the supply voltage I/O has scaled down. Due increasing interface bandwidth required area power consumption as well, resulting in higher circuit design costs [3]. A high-loss channel causes ISI, which turn limits maximum data rate. Therefore, complex equalizers are needed for compensation, additional dissipation overhead. As sampling rate increases,...

Performance improvements in mobile devices with multi-cores and enhanced graphics quality requires higher memory bandwidth. Consequently, the design of I/O becomes a crucial issue [1]. In LPDDR interface, ground-terminated interface is used for low-noise termination voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ss</sub> ) small capacitance (C xmlns:xlink="http://www.w3.org/1999/xlink">IO</sub> [2,3]. Even through noise margins power...

The bandwidth of parallel DRAM I/O has increased to meet big-data requirements. High memory (HBM) interfaces use up 1024 pins, and with an clock frequency, their power consumption also [1]. Figure 28.5.1 shows four HBM interface approaches. Conventional a termination-less structure at the receiver reduce consumption. For higher data rates receiver-side termination can be used improve signal integrity. However, this causes large static current for long consecutive identical digits (CID)....

Cameras and image sensors have recently been installed in many portable devices. An processor a transceiver are also adopted multimedia system-on-a-chip to handle the data from sensor. A wide input range flexible bandwidth needed for serial link receiver deal with various sensor specifications. This paper presents an 11.2-Gb/s low-voltage differential signaling (LVDS) devices that employ LVDS system transmission between processor. The designed has 16 channels four clock channels. All...

Among the stacked dies using through silicon via (TSV), data conflictions occur due to process mismatches, which decrease valid window and consume unwanted power short circuit current. This paper presents DLL-based self-aligner (DBDA), reduces among dies. The employing proposed DBDAs automatically align their output timings without relying on any control signals from master die or an extra signal die. DBDA confliction time (tDC) process, voltage temperature (PVT) variations 500 ps 50 thereby...

We present a 1.62-5.4-Gb/s receiver for DisplayPort version 1.2a and propose an adaptive equalizer (EQ) with peak-level comparison technique eye measurement. A single comparator up/down unmatched-current charge pump are used to realize simpler EQ architecture low power dissipation. referenceless frequency acquisition is also proposed. time-to-digital converter-based pulsewidth detector supports the within range of 1.62-5.4 Gb/s. An XOR-gate-embedded half-rate linear phase were improve jitter...

Abstract In this study, as system‐level photodetectors, light‐to‐frequency conversion circuits (LFCs) are realized by i) photosensitive ring oscillators (ROs) composed of amorphous indium‐gallium‐zinc‐oxide/single‐walled carbon nanotube (a‐IGZO/SWNT) thin film transistors (TFTs) and ii) phase‐locked‐loop Si built with frequency‐to‐digital converters (PFDC). The 3‐stage ROs logic gates based on a‐IGZO/SWNT TFTs successfully demonstrate its performance flexible substrates. Herein, along the...

This brief describes the design and implementation of a 250-Mb/s to 6-Gb/s single-loop referenceless clock data recovery circuit. The frequency multiplier acquisition circuit are used cover wide-range rate. is proposed generate 6-GHz with low jitter. In addition, voltage-controlled oscillator operates at 1/5-rate sampling clock, which has merit power consumption. achieves 9.56-ps rms jitter, consumes 13.2 mW 6 Gb/s, occupies 0.0944 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

Over the last few decades, bandwidth of dynamic random-access memory (DRAM) has increased significantly through innovative architectures and circuit-level techniques to overcome well-known "memory wall" problem. We can understand past challenges DRAM input/output (I/O) by investigating technologies utilized for I/O in transition from single-data-rate (SDR) synchronous (SDRAM)to double-data-rate (DDR) SDRAM. Recently developed versions low-power DDR four (LPDDR4) graphics five (GDDR5) employ...