Abstract Carbon double bond‐free printed solar cells have been fabricated with the structure <F‐doped SnO 2 (FTO)/dense TiO /nanocrystalline /CH 3 NH PbI /Au> and <FTO/dense /CuSCN/Au>, in which CuSCN acts as a hole conductor. The thickness of CH layer is controlled by hot air flow during spin coating. best conversion efficiency (4.86 %) obtained /thin (hot‐air dried)/CuSCN/Au>. However, thick on better for light‐exposure stability (100 mW cm −2 AM 1.5) when not encapsulated....

The presence of copper contamination is known to cause strong light-induced degradation (Cu-LID) in silicon. In this paper, we parametrize the recombination activity light-activated defects terms Shockley—Read—Hall statistics through injection- and temperature dependent lifetime spectroscopy (TDLS) performed on deliberately contaminated float zone silicon wafers. We obtain an accurate fit experimental data via two non-interacting energy levels, i.e., a deep center featuring level at...

Abstract In this work, we analyse passivated emitter and rear cells (PERC), based on wafers made from seed manipulation for artificially controlled defects technique (SMART) monocrystalline silicon, magnetically grown conventional Czochralski (mCz Cz) high‐performance multicrystalline (hpm) silicon. All were processed identically except the hpm wafers, which received an acidic texture instead of random pyramids. The energy conversion efficiency η SMART 21.4 % is similar to mCz (21.5 ) while...

Light and elevated temperature induced degradation (LeTID) is currently a severe issue in crystalline silicon photovoltaics, which has led to numerous efforts both understand the mechanism mitigate it. Here we show that low-temperature dark anneal performed as last step typical solar cell processing influences greatly LeTID characteristics, strength of kinetics. While relatively short range 200–240 °C can be detrimental by doubling intensity, an optimized at 300 shows opposite trend...

The presence of copper impurities is known to deteriorate the bulk minority carrier lifetime silicon. In p-type silicon, degradation occurs only under injection (e.g., illumination), but reason for this phenomenon called copper-related light-induced (Cu-LID) has long remained uncertain. To clarify physics problem, a mathematical model Cu-LID was introduced in Paper I article. Within model, kinetic precipitation simulations are interlinked with Schottky junction electric behavior metallic...

Copper contamination causes minority carrier lifetime degradation in p-type silicon bulk under illumination, leading to considerable efficiency losses affected solar cells. Although the existence of this phenomenon has been known for almost two decades, ambiguity prevails about underlying defect mechanism. In Paper I two-part contribution, we propose first comprehensive mathematical model Cu-related light-induced (Cu-LID). The is based on precipitation interstitial Cu ions, which assumed be...

The characteristics of different types catalyst layers based on Pt, polymer and carbon for flexible dye sensitized solar cells (DSSC) are investigated. These counter electrodes prepared at low temperature indium doped tin oxide polyethyleneterephtalate (ITO-PET) plastic compared with high treated platinum fluorine (FTO) coated glass substrates. Here the electrical electrode their optical performance evaluated in order to compare suitability direct reverse illumination. morphology substrate...

High‐efficiency solar cell designs such as the passivated emitter and rear (PERC) raise quality requirements for silicon substrates, favoring monocrystalline materials. Seed‐cast quasi‐monocrystalline (qm‐Si) is a promising alternative Czochralski (Cz) Si with potential benefits of lower cost reduced energy footprint. However, purity crystalline qm‐Si not on par Cz‐Si, which can cause efficiency losses example in form light‐induced degradation (LID). In this contribution, we study LID...

Abstract In this work, a photovoltaic mini‐module combining interdigitated back‐contacted solar cells with black silicon in the front was implemented as proof of concept. The module consists nine connected series an active area 86.5 cm 2 . Both assembly and panel encapsulation were made using industrial back‐contact technology. Noticeable efficiencies 18.1% 19.9% whole best individual cell module, respectively, demonstrate that fragile nanostructures can withstand standard fabrication...

While it is well known that copper impurities can be relatively easily gettered from the silicon bulk to phosphorus or boron–doped surface layers, has remained unclear how thermally stable gettering actually is. In this work, we show experimentally a typical rapid thermal anneal (RTA, few seconds at 800 °C) used commonly in semiconductor and photovoltaic industries sufficient release significant amount of Cu species phosphorus-doped layer wafer bulk. This enough activate so-called...

Volatile electrolytes are a stability concern in dye solar cells (DSCs) due to their tendency for leakage. A composite electrolyte consisting of iodide-based ionic liquid and polyaniline-coated carbon black has been previously reported provide good current transport while being leakage proof quasi-solid structure the absence volatile constituents. In this paper we investigate operating principle type especially its exceptional feature efficiently without added iodine. The additive iodine is...

Epitaxially-grown wafers on top of sintered porous silicon are a material-efficient wafer production process, that is now being launched into mass production. This process makes the material-expensive sawing procedure obsolete since can be easily detached from its seed substrate. With high-throughput inline processes, fast and reliable evaluation processes crucial. The quality layers plays an important role regarding successful detachment. Therefore, we present non-destructive investigation...

In this article, we present a characterization technique for thin-film layers on textured surfaces with random pyramids using reflectance spectroscopy and an optical model based the transfer-matrix method rigorous polarization ray tracing. The fits thickness of ultrathin amorphous silicon (a-Si) from measured spectrophotometry constants spectral ellipsometry. estimated a-Si layer is compared transmission electron microscopy (TEM) images. Modeling absolute spectrum, stack underestimated by...

Manufacture of photovoltaic silicon wafers through epitaxy directly from the vapor phase with so-called sintered porous method holds significant cost-saving potential compared traditional ingot growth and subsequent multiwire sawing because absence kerf loss. In this method, surface a substrate wafer is porosified to provide platform for epitaxial layer enable its later separation. As newly industrialized technology, kerf-free wafering requires addressing specific characterization needs. One...

The presence of copper contamination is known to severely degrade the minority carrier lifetime p‐type silicon upon exposure illumination. In this contribution, we have analyzed recombination activity light‐activated defects in deliberately Cu‐contaminated by means a model that quantitatively defines effect metallic precipitates on lifetime. excellent agreement between and experimental data indicates (i) formation Cu probable root‐cause behind Cu‐LID (ii) samples examined work, precipitate...

Copper is a common impurity in photovoltaic silicon. While reported to precipitate instantly n-type Si, copper causes light-induced degradation (Cu-LID) p-type Si. Recently, partial recovery of Cu-LID was observed after only few minutes dark annealing at 200 °C. In this contribution, we investigate the effects anneal on Cu-LID-limited minority carrier lifetime both experimentally and by simulations. Surprisingly, initial recovery, results further corresponding many-fold increase...

As photovoltaic (PV) device architectures advance, they turn more sensitive to bulk minority charge carrier lifetime. The conflicting needs develop ever advancing cell on cheapening silicon substrates ensure that various impurity-related light-induced degradation (LID) mechanisms will remain an active research area in the PV community. Here, we propose vertically integrated defect modeling as a framework accelerate identification and mitigation of different light induced defects. More...