A5079875969- Silicon Carbide Semiconductor Technologies
- Advanced DC-DC Converters
- Multilevel Inverters and Converters
- Advanced Battery Technologies Research
- GaN-based semiconductor devices and materials
- Wireless Power Transfer Systems
- Electromagnetic Compatibility and Noise Suppression
- Electrostatic Discharge in Electronics
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Smart Grid Energy Management
- Gut microbiota and health
- Electric Vehicles and Infrastructure
- Sustainable Urban and Rural Development
- Energy Harvesting in Wireless Networks
- Plant biochemistry and biosynthesis
- Cancer Immunotherapy and Biomarkers
- Enzyme Structure and Function
- Mast cells and histamine
- Diabetes and associated disorders
- Digital Media and Visual Art
- Receptor Mechanisms and Signaling
- Bladder and Urothelial Cancer Treatments
- Energy Load and Power Forecasting
Beijing Friendship Hospital
2025
Capital Medical University
2025
Research Institute of Forestry
2023
Jiangsu University
2023
Chinese Academy of Forestry
2023
Institute of Plant Protection
2022
Shanghai Jiao Tong University
2022
National Center of Biomedical Analysis
2022
Chinese Academy of Agricultural Sciences
2022
The Ohio State University
2013-2021
This paper proposes an isolated quasi-switched-capacitor (QSC) dc/dc converter to serve as auxiliary power supply in electric and hybrid vehicles, managing a bidirectional flow between the high-voltage (HV) battery low-voltage dc bus. A QSC dc/ac circuit with 3:1 voltage step-down ratio is proposed front-stage of converter. Based on it, synchronous-rectifier, current-doubler post-stage circuit. Compared existing full-bridge, half-bridge, three-level converters, features include: 1) stresses...
Gallium nitride (GaN) based power electronics devices are actively being evaluated to determine if their theoretical advantages over silicon (Si) switches can translate into improved performance of existing hardware as well open the doors new types applications, such high temperature implementations, or very frequency conversion. The following paper presents an overview this activity. A brief summary about and requirements semiconductor used in field is provided. Detailed analysis challenges...
The medium power rating two-level three phase voltage source inverter is among the most popular conversion systems. typical switching frequency of commercial inverter, however, limited to tens kHz. By increasing and using emerging gallium-nitride devices, size overall system can be greatly reduced. This paper begins by reviewing all commercially available GaN transistors their package technologies. GS66516T device from Systems selected due its suitable ratings superior performance. Then, a...
In this paper, a family of bidirectional dual-input dc/dc converters is proposed to combine photovoltaic system and battery energy storage system. This utilizes full-bridge, or half-bridge current-source circuit, as the primary side, quasi-switched-capacitor circuit secondary side. Depending on power level side voltage battery, different topologies can be selected. Compared other multiple-input with galvanic isolation, requires less switches passive components, reduces stress switches,...
Transportation electrification has been gaining momentum in the past two decades. Ground vehicle is front-runner of this paradigm shift as electric vehicles slowly but steadily penetrate consumer market. Besides higher costs, one main concerns related to range anxiety, which result limited accessibility charging ports and stations well relatively low energy density cycle life batteries. Lower cost, power, more accessible battery chargers are among potential solutions address expense anxiety issues.
Summary Herbivore‐induced plant volatiles (HIPVs) are known to be perceived by neighboring plants, resulting in induction or priming of chemical defenses. There is little information on the defense responses that triggered these plant–plant interactions, and phenomenon has rarely been studied rice. Using molecular analyses combination with insect behavioral performance experiments, we how emitted rice plants infested striped stemborer (SSB) Chilo suppressalis affect defenses against this...
Metformin is the first-line pharmacotherapy for type 2 diabetes mellitus; however, many patients respond poorly to this drug in clinical practice. The potential involvement of microbiota-mediated intestinal immunity and related signals metformin responsiveness has not been previously investigated. In study, we successfully constructed a humanized mouse model by fecal transplantation gut microbiota from metformin-treated – responders non-responders, reproduced difference phenotypes metformin....
Paralleling devices is an effective way to achieve a higher power application while still having the convenience of using discrete devices. However, mechanisms potential failures and circuit design considerations have not been thoroughly studied yet, when paralleling gallium nitride high-electron-mobility transistors (GaN HEMTs) in cascode configuration. This paper presents comprehensive study paralleled high-voltage GaN HEMTs, evaluating both device characteristics. The current oscillation,...
In this paper, we present a comprehensive evaluation of the latest 600 V class Gallium Nitride based Gate Injection Transistor (GaN-GIT) for high temperature and efficiency applications. study, Panasonic GITs are used as reference GaN-GIT technology. Static dynamic testing was performed on two versions to extract critical static parameters switching losses. A curve tracer measure gate-to-source threshold value Rds(on) across full operating range. double pulse setup developed test devices...
This paper presents an overview of the latest Gallium Nitride High Electron Mobility Transistor (GaN HEMT) technology. The development and challenges 30 V to 650 GaN HEMTs are summarized. evaluation methodology HEMT is presented, including static characterization dynamic characterization. also demonstrates application developed by Center for Performance Power Electronics (CHPPE). Various high efficiency power density circuit prototypes based on presented.
With the rapid development of wide bandgap power transistor technology, latest gallium-nitride based transistors are able to be used as main switches in high (≥10 kW) conversion systems. In order achieve desired efficiency and higher density successfully, entire GaN system needs take multiple considerations into design stage. this paper, a three-phase inverter is example explain those detail, including critical component selection, physical layout, cooling design, protection functions EMI...
This paper investigates the power module design for better common-mode (CM) noise and thermal performance. A high-frequency full-bridge diode rectifier is selected as a case study. The most influential factors in CM generation mitigation are first identified with simplified equivalent model comprehensive parametric Studies show proper parasitic value parasitics symmetry can improve analysis of packaging structures indicates vertical has performance than traditional lateral wire-bonded...
This paper presents a GaN Transistor based 90W ac/dc adapter with Buck-PFC stage and an isolated Quasi-Switched-Capacitor (QSC) dc/dc stage. In the stage, two different QSC converters are proposed. Compared to Flyback LLC resonant converters, feature: 1) reduced voltage stress on primary-side switches 2/3 of input voltage; 2) transformer 1/3 lower turns ratio; 3) wide range for soft-switching operation high efficiency; 4) simple control strategy. The principles simulation results presented....
Electric vehicle (EV) chargers are traditionally isolated from the grid. Non-isolated have great potential as they enable higher power density at lower cost. Integrated to utilize existing onboard, high power-rated electronic components for Level 3 charging. Four possible non-isolated integrated charger topologies based on permanent magnet synchronous machine (PMSM) introduced beginning of this paper. Then, issue common mode (CM) leakage current through on-board filters is identified and...
With offline single-phase power supplies moving toward the megahertz switching frequency range, converter's bus capacitor becomes bottleneck of further improvement density. Partial constant operation is effective in reducing capacitance and current stress for low-power applications. However, its impact on circuit design has not been studied thoroughly. developed loss model, this paper presents considerations analysis ac/dc converters partial operation. An adaptive control also proposed,...
A quasi-switched-capacitor (QSC) resonant converter is proposed for isolated dc/dc conversion in offline power supply application. Similar to the Φ2 converter, operated most efficiently at fixed switching frequency and duty ratio, it features trapezoidal voltage waveforms on all switches. Full soft combining ZCS, ZVS off achieved within a wide load range, and, therefore, loss minimized. In addition, compared half/full-bridge converters (e.g., LLC dual-active-bridge converter), reduces stress...
DnaJs are the common molecular chaperone proteins with strong structural and functional diversity. In recent years, only several DnaJ family members have been found to be able regulate leaf color, it remains explored whether there other potential that also this character. Here, we identified 88 putative from Catalpa bungei, classified them into four types according their domain. Gene-structure analysis revealed each member of CbuDnaJ had same or similar exon-intron structure. Chromosome...
This paper presents a single BCD technology platform with high performance power devices at wide range of operating voltages. The offers 6 V to 70 LDMOS devices. All offer best-in-class specific on-resistance 20 40 % lower than that the state-of-the-art IC-based and robustness better square SOA (safe-operating-area). Fully isolated devices, in which independent bias is capable for circuit flexibility, demonstrate superior (e.g. 11.9 mΩ-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Paralleling devices is an effective way to achieve higher power applications while still having the convenience brought by discrete devices. However, very few papers investigate challenges of paralleling Gallium Nitride high electron mobility transistors (GaN HEMTs) in cascode configuration, especially potential failure modes and its related mechanisms. In this paper, a comprehensive study on paralleled voltage GaN HEMTs presented. The influence circuit's stray inductance studied. Potential...
Wide bandgap (WBG) devices allow power factor correction (PFC) circuits to operate at megahertz (MHz), which improves density. In low-power applications, critical conduction mode (CrM) boost PFC are widely used due its simple structure and minimized turn-on loss. Compared with the kilohertz (kHz) operation, MHz in CrM yields larger inductor valley current during zero voltage or switching turn-on, significant grid zero-crossing distortion, both of not considered conventional behavioral...
Behavioral models of semiconductor devices have been widely implemented in simulation tools because they simple structures and easy parameter extraction procedures. However, the IGBT behavioral model is more complicated than that MOSFET BJT structure exhibits charge storage phenomenon, such as tail current. In this paper, a with procedure wide temperature range proposed to estimate hard switching loss at different operation conditions. A current module so estimation turn-off becomes...
This paper presents a comprehensive analysis of the generation mechanism and suppression methods common-mode (CM) touch current when employing semiconductor-based galvanic isolation (SGI). SGI achieves by utilizing semiconductor switches to deliver differential-mode (DM) power during their on states while sustaining CM voltage off states. In converters, (TC) is generated as switch output capacitance charged each turn-on transient. The TC rises switching frequency increases, which limits...
This paper investigates the power module design for better common-mode (CM) noise performance. A high frequency full-bridge diode rectifier is studied as an example. For this circuit, a comprehensive parametric study and proposed CM equivalent model are first presented to identify most influential factors in generation mitigation. It shown that proper parasitic value parasitics symmetry can improve vertical traditional wire-bonded lateral compared. The has smaller ac side capacitances, stray...
This paper presents an overview of wide bandgap (WBG) power devices. The development and challenges silicon carbide (SiC) gallium nitride (GaN) devices are summerized. A comprehensive evaluation the performance different is conducted, including static characterization dynamic switching related tests. also demonstrates application WBG in electronic circuits. testing results provided to show aspects.