A5085005021- Gas Sensing Nanomaterials and Sensors
- Perovskite Materials and Applications
- Advanced Photocatalysis Techniques
- 2D Materials and Applications
- Ga2O3 and related materials
- Nanowire Synthesis and Applications
- Flame retardant materials and properties
- Quantum Dots Synthesis And Properties
- Transition Metal Oxide Nanomaterials
- Photonic and Optical Devices
- Supercapacitor Materials and Fabrication
- Copper-based nanomaterials and applications
- Analytical Chemistry and Sensors
- Graphene research and applications
- Advanced Memory and Neural Computing
- Neural Networks and Reservoir Computing
- Solid-state spectroscopy and crystallography
- Advanced Semiconductor Detectors and Materials
- Layered Double Hydroxides Synthesis and Applications
- MXene and MAX Phase Materials
- Graphene and Nanomaterials Applications
- CCD and CMOS Imaging Sensors
- Photoreceptor and optogenetics research
- ZnO doping and properties
- Synthesis and properties of polymers
Hefei University of Technology
2020-2024
Anhui University
2023-2024
Southwest University
2021-2023
Shanghai Research Institute of Chemical Industry
2021-2022
Universidad Politécnica de Madrid
2018-2022
IMDEA Materials
2018-2022
Hefei University
2021
Wuhan University of Technology
2013-2019
Xinyang Normal University
2017-2018
This review provides an overview of the basic concepts and operation mechanisms ultraviolet (UV) photodetectors (PDs), main research status, future outlooks II–VI group compound semiconductor-based UVPDs.
Metastable materials have received extensive attention due to their unique physical and chemical properties which are different from those of the thermodynamically stable phase. However, variety reported metastable is still very limited owing difficulties in effective synthesis pure because they can easily transform into corresponding phases. Therefore, it crucial a great challenge explore new with novel fascinating functions. In this study, hierarchically porous β-Ag2WO4 hollow nanospheres...
Platinum telluride (PtTe2) has garnered significant research enthusiasm owing to its unique characteristics. However, large-scale synthesis of PtTe2 toward potential photoelectric and photovoltaic application not been explored yet. Herein, we report direct tellurization Pt nanofilms synthesize large-area films the influence growth conditions on morphology PtTe2. Electrical analysis reveals that as-grown exhibit typical semimetallic behavior, which is in agreement with results...
Ultraviolet photodetectors (UVPDs) based on wide band gap semiconductors (WBSs) are important for various civil and military applications. However, the relatively harsh preparation conditions high cost unfavorable commercialization. In this work, we proposed a non-WBS UVPD by using silicon nanowire (SiNW) array with diameter of 45 nm as building blocks. Device analysis revealed that small SiNW covered monolayer graphene was sensitive to UV light but insensitive both visible infrared...
A desired water splitting photocatalyst should not only possess a suitable bandgap and band edge position, but also host the spontaneous progress for overall without aid of any sacrificial agents. In this work, we propose two-dimensional CdS/SnS2 heterostructure (CSHS) as possible by first-principles calculations. The CSHS enhances absorption visible infrared light, type-II alignment guarantees spatial separation photoinduced carriers. induced built-in electric field across interface...
Abstract In this study, a solution method derived dual‐band photodetector (PD) based on silicon nanowires /PbS nanocrystalline film n–n heterojunction, which exhibits typical bias‐selectable spectral response in both near‐infrared (NIR) and short‐wave infrared (SWIR) bands, is presented. It found that by adjusting the polarity of bias voltage, photoresponse device can be switched between three operation modes. The high responsivities 2100 mA W −1 at −0.15 V 31 0 V, respectively, NIR region....
In this study, simple-structured wavelength sensors were developed by depositing two back-to-back Au/MAPbI3/Au photodetectors on an MAPbI3 single crystal. This sensor could quantitatively distinguish wavelengths. Further device analysis showed that both possess entirely disparate optoelectronic properties. Consequently, the as-developed accurately incident-light wavelengths ranging from 265 to 860 nm with a resolution of less than 1.5 based relation between photocurrent ratios and incident...
Abstract Self‐powered near‐infrared (NIR) photodetectors utilizing low‐dimensional materials are promising owing to their low‐power‐consumption and superior photoresponse performance. The strong light‐matter interaction other intriguing physical mechanisms (such as high mobility, dangling‐bond‐free surface) in 2D semiconductor materials, combined with the flexible fabrication of device structures, create new opportunities for optoelectronic devices. Here, a self‐powered NIR Schottky junction...
Simulation of synaptic characteristics is essential for the application organic field effect transistors (OFETs) in neural morphology. Although excellent performance, including bias stability and mobility, as well photoelectric pulse simulation, has been achieved SiO
Abstract High‐performance semiconductor devices capable of multiple functions are pivotal in meeting the challenges miniaturization and integration advanced technologies. Despite inherent difficulties incorporating dual functionality within a single device, high‐performance, dual‐mode device is reported. This integrates an ultra‐thin Al 2 O 3 passivation layer with PbS/Si hybrid heterojunction, which can simultaneously enable optoelectronic detection neuromorphic operation. In mode 1,...
Abstract Accurate and quantifiable detection of the specific wavelength is vital in different application scenarios. Herein, a novel self‐driven narrowband photodetector (NB‐PD) based on CH(NH 2 ) PbBr 2.5 I 0.5 crystal film employed for building yellow light intensity meter. By taking advantage carrier collection narrowing mechanism, sensitive NB‐PD with peak response at 580 nm full‐width half‐maximum 23 are successfully achieved. The asymmetric contact electrodes Ag/Pt allow device to work...
Palladium diselenide (PdSe2), a noble transition metal dichalcogenide has attracted increasing attention in recent years due to its outstanding semiconductor properties. In this study, 2D PdSe2 nanofilms with thicknesses ranging from 2 28 nm and their heterostructures Si substrates (PdSe2/Si heterostructures) were synthesized via simple selenization method. Electrical transport characterizations based on field-effect transistor devices indicate that the few-layer exhibit p-type...
This study was aimed at investigating the effects of carbon nanomaterials with different geometries on improving flame retardancy magnesium hydroxide–filled ethylene-vinyl acetate (EM). The thermal stability and were studied by thermogravimetric analysis (TGA), limiting oxygen index (LOI), UL-94 test, cone calorimeter test (CCT). in situ temperature monitoring system interrupted combustion offered direct evidence to link composite structure. Results demonstrated that enhanced fire safety EM....
A new wavelength sensor based on two identical PtSe<sub>2</sub>/thin Si Schottky junctions that are able to distinguish in the range of UV-NIR (265–1050 nm) was proposed.
Ultraviolet photodetectors (UVPDs) have played an important role both in civil and military applications. While various studies shown that traditional UVPDs based on wide-band-gap semiconductors (WBSs) excellent device performances, it is, however, undeniable the practical application of WBS-based is largely limited by relatively high fabrication cost. In this work, we propose a new silicon nanowire (Si NW) UVPD very sensitive to UVB light illumination. The Si NWs with diameter about 36 nm...