Abstract In this paper, optoelectronic characteristics and related switching behavior of one monolithically integrated silicon light-emitting device (LED) with an interesting wavelength range 400–900 nm are studied. Through the comparison two types geometry, Si avalanche-based LED field-effect (Si FE LED), in same device, we establish dimensional dependence speed LED. Almost-linear modulation curve implies lower distortion is shown for light emission enhancement, technology computer aided...

Silicon avalanche light-emitting devices (Si Av LEDs) offer various possibilities for realizing micro- and even nano- optical biosensors directly on chip. The (LEDs) operate in the wavelength range of about 450-850nm, their power emitted is order a few hundreds nW/µm2. These LEDs could be fabricated dimensions by using modern semiconductor fabrication processing technologies through mainstream silicon material. Through series experiments, dispersion phenomena Si LED are observed. Also, its...

Compared to the widely used compound semiconductor photoelectric sensors, all-silicon sensors have advantage of easy mass production because they are compatible with complementary metal-oxide-semiconductor (CMOS) fabrication technique. In this paper, we propose an biosensor a simple process and that is integrated, miniature, low loss. This based on monolithic integration technology, its light source PN junction cascaded polysilicon nanostructure. The detection device utilizes refractive...

This paper studies integrated silicon light emitter implemented in standard CMOS technologies. A new MOS-like structure utilizing deep p-well is presented, and compared with conventional planar p-n junction diode at visible wavelength avalanching bias conditions. Prototype fabricated a 3-μm technology, its dc, phase shift, direct modulation frequency response nanowatt power level are characterized, experimental results for reverse-bias region showing the simulated maximum around ~45 GHz...

Photon emission from Si p‐channel MOS field‐effect transistor (PMOSFET) having 6‐μm effective gate length that is operated as a three‐terminal gate‐controlled light‐emitting diode fabricated. Using photon‐emission microscope with detector responsive to the range of 200–1000 nm, continues spectra obtained in 1.38–2.76 eV), which includes visible light radiation. Since MOS‐like utilizes field effect induced by for modulation diode's space charge electric and hence optical output emitting...

The motivation of this study is to develop a p–n junction based light emitting device, in which the emission conventionally realized using reverse current driving, by voltage driving. By introducing an additional terminal insulated gate for novel three-terminal Si device described where both intensity and spatial pattern are controlled voltage. proposed employs injection-enhanced avalanche mode electric field confinement occurs corner reverse-biased p+n junction. It found that, depending on...

Corrections to "On the Design and Optimization of Three-Terminal Light-Emitting Device in Silicon CMOS Technology" (Kaikai Xu). Presented here is a list corrections.

All-CMOS monolithic microdisplay technologies have been attracting attention due to their direct integration of light-emitting pixel arrays and driving circuits on a single silicon substrate. Improvements optical power efficiency hot spot for all-silicon technologies. MOS-like gate-control structure avalanche-mode diodes (AMLEDs) that employ hot-carrier electroluminescence produce light emission are used enhance the units. A semi-active matrix mode is reduce consumption driver circuits....

Si <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msup> <mml:mrow> <mml:mi mathvariant="normal">p</mml:mi> </mml:mrow> <mml:mo>+</mml:mo> </mml:msup> mathvariant="normal">n</mml:mi> </mml:math> junction diodes operating in the mode of avalanche breakdown are capable emitting light visible range 400–900 nm. In this study, to realize switching speed GHz range, we present a transient model shorten carrier lifetime high electric field region by accumulating...

To observe the effect of acupuncture on oxeiptosis Kelch-like ECH-associated protein 1 (KEAP1)/phosphoglycerate mutase 5 (PGAM5)/mitochondrial apoptosis-inducing factor (AIFM1) signaling pathway in rats with diminished ovarian reserve (DOR), so as to explore possible mechanisms by which improves function DOR rats. Female SD were randomly divided into control group, model and 6 each group. The was established one-time intraperitoneal injection 75 mg/kg cyclophosphamide. After modeling, group...

Abstract Extensive high, steep and perilous rocky slopes are present on both sides of the Three Gorges Reservoir area, with numerous such interspersed. The rock mass structure this type dangerous slope is complex, strongly affecting stability masses in region. Hence, it necessary to establish a detailed 3D geological model combination internal structural characteristics mass. Taking Jianchuandong 3# (JDRM 3#) area as an example, study integrated UAV photogrammetry technology laser scanning...

In this paper, the switching characteristics as associated with p + n gated MOSFET silicon LED are reviewed. By employing insulated-gate terminal, which allows adjustment of P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> source/drain to N-substrate junction breakdown voltage, it is demonstrated that electro-optical modulation in Si-PMOSFET device operates gate-controlled diodes. The PMOSFET can operate a Si-diode or an Si diode LED....

Carrier energy and momentum engineering design concepts have been utilized to realize higher intensity, up 200 nW.μm -2 in p+nn+ silicon avalanche-based LEDs a 0.35-μm RF bipolar process. The spectral range is from 600- 850-nm wavelength region. Best performance are 600-nW vertical emission 3-μm square active area at 10 V 1 mA (200 nW.um-2). achieved emitted optical intensity about 100 fold better as compared with other published work for nearest related devices. In particular, evidence has...

A low voltage all silicon microdisplay is presented based on MOS-like gate-control all-Silicon light-emitting diode (LED) in standard 0.18 μm complementary metal oxide semiconductor (CMOS) technology. The LED designed under a PN alternate structure with polysilicon gate control electrode for high luminous intensity and operating voltage. device fabricated the as pixel units. size of proposed 6.2 mm × 5.0 about 368 mW/mm2 at stable 1.8 V.

In this article, we discuss the emission of visible light (400–900 nm) by a monolithically integrated silicon p-n junction under reverse bias. Silicon emitting devices (Si-LEDs) could be designed and realized utilizing standard complementary metal oxide semiconductor (CMOS) technology. Increased electroluminescence from three-terminal MOS-like structure is observed, with approach carrier energy momentum engineering design. Because Si-LEDs, waveguides, photodetectors (Si) can on single chip,...

In this paper, we discuss the emission of visible light by a monolithically integrated silicon gate-controlled diode with p-n junction reverse-biased. Since MOS-like utilizes field effect to modulate optical output, modulation speed will benefit from mechanism. Hence, structure for analyzed its principle, dynamic characteristics are presented, and bandwidth device is considered approach GHz in theory due field-induced The prototype opens up design multiterminal emitting devices (LEDs), where...