M. Ohno

ORCID: 0000-0002-8460-5060
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About
Contact & Profiles
Research Areas
  • Topological Materials and Phenomena
  • Quantum and electron transport phenomena
  • Graphene research and applications
  • Electronic and Structural Properties of Oxides
  • Iron-based superconductors research
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Condensed Matter Physics
  • Magnetic confinement fusion research
  • Physics of Superconductivity and Magnetism
  • Multiferroics and related materials
  • Magnetic and transport properties of perovskites and related materials
  • Semiconductor materials and interfaces
  • Superconductivity in MgB2 and Alloys
  • Ionosphere and magnetosphere dynamics
  • 2D Materials and Applications
  • Semiconductor Quantum Structures and Devices
  • Magnetic properties of thin films
  • Thermodynamic and Structural Properties of Metals and Alloys
  • Plasma Diagnostics and Applications
  • Quantum many-body systems
  • Nuclear materials and radiation effects
  • Chemical and Physical Properties of Materials
  • Particle accelerators and beam dynamics
  • Inorganic Chemistry and Materials

The University of Tokyo
1996-2024

Tokyo Institute of Technology
2021-2022

The Graduate University for Advanced Studies, SOKENDAI
2015-2017

Max Planck Institute for Plasma Physics - Greifswald
2015

Shiga University of Medical Science Hospital
2006

Searching for an ideal magnetic Weyl semimetal hosting only a single pair of points has been focal point systematic clarification its unique magnetotransport derived from the interplay between topology and magnetization. Among candidates, triangular-lattice antiferromagnet EuCd2As2 attracting special attention due to prediction phase in ferromagnetic state; however, transport properties low-carrier density samples have remained elusive. Here, we report molecular beam epitaxy growth films,...

10.1063/5.0183907 article EN Applied Physics Letters 2024-01-08

Here we study nonmonotonic features which appear both in magnetoresistivity and anomalous Hall resistivity during the simple magnetization process, by systematically measuring type-II magnetic Weyl semimetal EuCd$_2$Sb$_2$ films over a wide carrier density range. We find that positive hump can be explained as manifestation of field-linear term generalized magnetoconductivity formula including Berry curvature. As also confirmed model calculation, negative pronounced near point energy case...

10.1103/physrevb.109.l121108 article EN Physical review. B./Physical review. B 2024-03-14

Geometrical frustration endows magnets with degenerate ground states, resulting in exotic spin structures and quantum phenomena. Such magnets, called can display non-coplanar textures be a viable platform for the topological Hall effect driven by “emergent field.” However, most are insulators, making it challenging to electrically detect associated fluctuations excitations. Here, we probe magnetic transitions ice insulator Dy 2 Ti O 7 , prototypical magnet, as emergent magnetotransport...

10.1126/sciadv.adk6308 article EN cc-by-nc Science Advances 2024-03-13

While anomalous Hall effect (AHE) has been extensively studied in the past, efforts for realizing large response have mainly limited within intrinsic mechanism. Lately, however, a theory of extrinsic mechanism predicted that magnetic scattering by spin cluster can induce AHE even above ordering temperature, particularly semiconductors with low carrier density, strong exchange coupling, and finite chirality. Here, we find out new semiconductor EuAs, where Eu2+ ions moments form distorted...

10.1126/sciadv.abl5381 article EN cc-by-nc Science Advances 2021-12-22

A large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. The recently proposed magnetic Weyl semimetal ${\mathrm{EuCd}}_{2}{\mathrm{Sb}}_{2}$ provides an excellent platform controlling AHE because it only hosts a Weyl-point-related band structure near Fermi energy. Here, we report fabrication of single-crystalline films and control their by film technique. As also analyzed first-principles calculations...

10.1103/physrevb.105.l201101 article EN Physical review. B./Physical review. B 2022-05-02

We present an epitaxial stabilization of pyrochlore Bi$_2$Rh$_2$O$_7$ on Y-stabilized ZrO$_2$ (YSZ) (111) substrate by inserting a Eu$_2$Ti$_2$O$_7$ template layer, otherwise Bi-based layered structures being formed directly YSZ substrate. This result reveals that "iso-structural crystal phase" plays important role in the interfacial phase control. The film exhibits $p$-type electrical conduction with lowest longitudinal resistivity ($\rho_\mathrm{xx}$) among reported Rh oxides. Such...

10.1063/5.0151959 article EN Applied Physics Letters 2023-06-19

We present a study on magnetotransport in films of the topological Dirac semimetal Cd$_{3}$As$_{2}$ doped with Sb grown by molecular beam epitaxy. In our weak antilocalization analysis, we find significant enhancement spin-orbit scattering rate, indicating that doping leads to strong increase pristine band-inversion energy. discuss possible origins this large comparing Sb-doped other compound semiconductors. will be suitable system for further investigations and functionalization semimetals.

10.1103/physrevb.103.045109 article EN Physical review. B./Physical review. B 2021-01-08

Layered oxides have been intensively studied due to their high degree of freedom in designing various electromagnetic properties and functionalities. While Bi-based layered supercell (LSC) compounds [BinOn+δ]-[MO2] (M = Mn, Mn/Al, Mn/Fe, or Mn/Ni; n 2, 3) are a group prospective candidates, all the reported insulators. Here, we report on synthesis two novel metallic LSC [BinOn+δ]-[RhO2] (n by pulsed laser deposition subsequent annealing. With tuning thickness sublattice from Bi2O2+δ Bi3O3+δ,...

10.1063/5.0147646 article EN cc-by APL Materials 2023-05-01

While the family of layered pnictides $ABX_2$ ($A$ : rare or alkaline earth metals, $B$ transition $X$ Sb/Bi) can host Dirac dispersions based on Sb/Bi square nets, nearly half them has not been synthesized yet for possible combinations $A$ and cations. Here we report fabrication EuCdSb$_{\mathrm{2}}$ with largest $B$-site ionic radius, which is stabilized first time in thin film form by molecular beam deposition. crystallizes an orthorhombic $Pnma$ structure exhibits antiferromagnetic...

10.1063/5.0043453 article EN cc-by APL Materials 2021-05-01

Searching for an ideal magnetic Weyl semimetal hosting only a single pair of points has been focal point systematic clarification its unique magnetotransport derived from the interplay between topology and magnetization. Among candidates, triangular-lattice antiferromagnet EuCd$_2$As$_2$ attracting special attention due to prediction phase in ferromagnetic state, however, transport properties low-carrier density samples have remained elusive. Here we report molecular beam epitaxy growth...

10.48550/arxiv.2401.02026 preprint EN other-oa arXiv (Cornell University) 2024-01-01

We report fabrication of ${\mathrm{EuSb}}_{2}$ single-crystalline films and investigation their quantum transport. First-principles calculations demonstrate that is a magnetic topological nodal-line semimetal protected by nonsymmorphic symmetry. Observed Shubnikov-de Haas oscillations with multiple frequency components exhibit small effective masses two-dimensional field-angle dependence even in 250 nm thick film, further suggesting possible contributions surface states. This finding the...

10.1103/physrevb.103.165144 article EN Physical review. B./Physical review. B 2021-04-30

We investigated non-resonant phonon-assisted tunnelling in an InGaAs/InAlAs triple barrier diode the presence of high magnetic fields up to 40 T current direction. observe quenching valley and narrow band GaAs-like AlAs-like longitudinal optical (LO) phonon peaks related bottleneck effect. The peak-to-valley ratio device increases significantly 12 T. LO-phonon give information about electron - coupling strength well layers.

10.1088/0268-1242/12/8/012 article EN Semiconductor Science and Technology 1997-08-01

The impact of epitaxial NiSi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> S/D on MOSFET performance has been investigated. Atomically flat /Si (111)-facet interface and straight edges irrespective the gate edge roughness contribute to suppressing SCE

10.1109/isdrs.2005.1596003 article EN International Semiconductor Device Research Symposium 2006-03-10

Layered oxides have been intensively studied due to their high degree of freedom in designing various electromagnetic properties and functionalities. While Bi-based layered supercell (LSC) compounds [Bi$_n$O$_{n+\delta}$]-[$M$O$_2$] ($M$ = Mn, Mn/Al, Mn/Fe, or Mn/Ni; $n=2, 3$) are a group prospective candidates, all the reported insulators. Here, we report on synthesis two novel metallic LSC [Bi$_{n}$O$_{n+\delta}$]-[RhO$_2$] ($n=2, by pulsed laser deposition subsequent annealing. With...

10.48550/arxiv.2302.13538 preprint EN cc-by arXiv (Cornell University) 2023-01-01

Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an excellent platform controlling AHE because it only hosts a Weyl-points related band structure near Fermi energy. Here we report fabrication of single-crystalline films and control their by film technique. As also analyzed first-principles calculations energy-dependent...

10.48550/arxiv.2204.06880 preprint EN cc-by arXiv (Cornell University) 2022-01-01
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