A5018031024- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Ga2O3 and related materials
- Metal and Thin Film Mechanics
- Radiation Detection and Scintillator Technologies
- Magnetic and transport properties of perovskites and related materials
- Advanced Photocatalysis Techniques
- Graphene research and applications
- Atomic and Subatomic Physics Research
- Supercapacitor Materials and Fabrication
- Diamond and Carbon-based Materials Research
- Quantum Dots Synthesis And Properties
- Luminescence Properties of Advanced Materials
- Silicon Carbide Semiconductor Technologies
- Gold and Silver Nanoparticles Synthesis and Applications
- Advanced biosensing and bioanalysis techniques
- Magnetic properties of thin films
- Plasmonic and Surface Plasmon Research
- Nanowire Synthesis and Applications
- Metallic Glasses and Amorphous Alloys
- Advanced Materials Characterization Techniques
- Transition Metal Oxide Nanomaterials
- Nanocluster Synthesis and Applications
University of Shanghai for Science and Technology
2016-2025
University of Cambridge
2006-2024
Xidian University
2022
Shanghai Research Institute of Materials
2004-2018
East China Normal University
2016
National Institute for Materials Science
2010
Shanghai University
2004
Chinese Academy of Sciences
2002-2003
Institute of Semiconductors
2003
University of Science and Technology Beijing
2003
We fabricated fully epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions using plasma oxidation of an Mg/Al bilayer. The MgAl2O4 showed a (001)-oriented spinel-type structure, and there were few misfit dislocations at the interfaces between two Fe layers due to small lattice mismatch (∼1%). Tunnel magnetoresistance (TMR) ratios up 117% (165%) obtained room temperature (15 K). bias voltage for one-half zero-bias TMR ratio (Vhalf) was relatively large, ranging from 1.0 1.3 V temperature,...
The content of precious Au contained in electronic waste (e-waste) is often tens to hundreds times higher than that natural ore deposits. Current technologies for recovering from...
Graphene quantum dots (GQDs) show significant promise as antibacterial agents, but their application is hindered by several limitations, including potential cytotoxicity at high concentrations, well concerns regarding aggregation and reusability. In this study, sodium titanate (NTO) ultralong nanotubes were utilized both a photocatalyst support for GQDs. The NTO/GQDs heterojunction was formed embedding GQDs nanoplates onto the walls of NTO nanotubes. This integration significantly improved...
Abstract Composite nanostructures with plasmonic metals can introduce optical resonances and enhance optoelectronic performance significantly. In this work, novel lateral porous GaN/Ag nanowires (NWs) composite nanostructure‐based UV photodetectors were designed fabricated, the detectivity is up to 10 15 Jones at V = 1 a fast response speed of ≈180 µs under illumination, which more than ≈10 5 times faster that without Ag NWs. Combined finite‐difference time‐domain simulations, results show...
The lateral size of graphene nanosheets plays a critical role in the properties and microstructure 3D as well their application supports electrocatalysts for CO2 reduction reactions (CRRs). Here, oxide (GO) with different sizes (1.5, 5, 14 µm) were utilized building blocks aerogel (GA) to research effects GO on CRR performances Au/GA catalysts. It was found that GO-L (14 led formation GA large pores low surface area GO-S (1.5 induced thicker wall isolated pores, which not conducive mass...
Highly conductive corrosion protection coatings are necessary for metallic bipolar plates (BPs) of the proton-exchange membrane fuel cell. Graphene have potential protecting metal substrates from without obscuring their excellent electrical conductivity. The electron transfer in facilitates formation galvanic cells, so challenge is to block mass process. Here, we constructed highly compacted hybrid with aligned water-dispersible graphene layers. (SG) held an conductivity >270 S cm-1 while...
The degradation of InGaN∕GaN laser diodes grown by molecular beam epitaxy is analyzed using surface mapping the photoluminescence emission on a micrometric scale, which allows identification failure regions. This, combined with electroluminescence, suggests two different mechanisms for degradation. Increased nonradiative recombination at specific sites along crystal directions associated presence dislocations lying in basal plane near active region one these. We also observe an increase...
Solid-state carbon dots (CDs) are a new kind of color converting material for white light-emitting diodes (white LEDs) because its good luminesce performance and low toxicity; however, CDs in solid state suffer from aggregation-caused quenching (ACQ); thus, solid-state need to be dispersed into or encapsulated with matrix. Herein, we prepared the one-pot hydrothermal method BaSO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> matrix by...
Structural characterization has been performed on (0001)-GaN epilayers grown (111)-Ge substrates using plasma assisted molecular beam epitaxy. By combining high-resolution x-ray diffraction, transmission electron microscopy, and scanning it shown that the GaN epilayer consists of misoriented domains. The domains are rotated about GaN-[0001] (Ge-[111]) zone axis by 8° with respect to each other ±4° Ge substrate. These need be eliminated reduce grain boundary defects improve crystal quality.
Abstract This paper presents a comparative study of the magnitude electric fields in AlGaN/GaN quantum well structures, measured using electron holography transmission microscope and estimated from comparison low temperature photoluminescence peak energies with calculated values. The values derived two techniques were found to be reasonable agreement for structures examined here. A larger field across GaN was observed single compared 10 period structure equivalent thickness, while presence...
We investigated the modulation responses and optoelectronic properties of light-emitting diodes (LEDs) grown on free-standing (0001) GaN. These LEDs have a larger bandwidth than those sapphire at higher current density, maximum −3 dB 510 MHz was achieved, which is 1.7 times compared to sapphire. In addition, due lower substrate temperature, there may be an increase in indium that incorporated into active region as well point defects GaN, will influence properties.