A5047962504- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Chalcogenide Semiconductor Thin Films
- Thermography and Photoacoustic Techniques
- Infrared Target Detection Methodologies
- Advanced X-ray and CT Imaging
- Radiation Detection and Scintillator Technologies
- Electronic and Structural Properties of Oxides
- Integrated Circuits and Semiconductor Failure Analysis
- Calibration and Measurement Techniques
- Optical and Acousto-Optic Technologies
- Nuclear Materials and Properties
- Magnetic Properties and Applications
- Microstructure and Mechanical Properties of Steels
- Semiconductor materials and devices
- Additive Manufacturing Materials and Processes
- Terahertz technology and applications
- Magnetic properties of thin films
- Digital Radiography and Breast Imaging
- Advanced Materials Characterization Techniques
- CCD and CMOS Imaging Sensors
- Theoretical and Computational Physics
- GaN-based semiconductor devices and materials
- Superconducting and THz Device Technology
- Photorefractive and Nonlinear Optics
RTX (United States)
2012-2024
Inflammatory Response Research (United States)
1982-1998
HRL Laboratories (United States)
1994
University of Illinois Urbana-Champaign
1980
University of Washington
1972-1976
The quantitative effects of dislocations on the electrical and optical properties long-wavelength infrared (LWIR) HgCdTe photovoltaic detectors was determined by deliberately introducing into localized regions two high-performance arrays having cutoff wavelengths 9.5 10.3 μm at T=78 K. Results show that can have a dramatic effect detector R0A product, particularly temperatures below 78 For large dislocation densities, decreases as square density; onset dependence occurs progressively lower...
We report on an interband cascade mid-wave infrared (MWIR) detector based type-II InAs/GaSb/AlSb strained layer superlattices (T2SL). The reported device has a seven-stage region, each segment containing MWIR absorber graded T2SL transport and tunneling region. Above room temperature spectral response was observed, with cutoff wavelength of 7 μm at 420 K. Detailed radiometric measurements yielded Johnson noise limited detectivity 3.0 × 1011 cmHz1/2W−1 (8.9 108 cmHz1/2W−1) dark current...
Hg1−xCdxTe surfaces have been investigated by XPS and ellipsometry after spray etching or polish with Br solutions, the growth of native oxide films. Etching depletes surface Cd, enriches either Hg Te depending on etch method. Air‐grown oxides range up to 25 Å in thickness are essentially TeO2. This increases increasing concentration, which depends etch. Native 700 thick were grown anodizing. Results consistent CdTeO3 as major constituent. Stripping anodic HCl reveals a ∠100‐Å Te‐rich layer...
For the Hg–Cd–Te–O system an approximate three-dimensional diagram of quaternary phase equilibrium at room temperature has been constructed for first time, to aid in study Hg1−xCdxTe surface oxides. Thermodynamic calculations based on standard Gibbs energies formation were performed determine which phases are mutually stable. Stability relationships checked by reaction experiments mixtures bulk reference compounds, using Raman spectroscopy analysis. Elemental Hg is shown coexist with all...
We have used spectroscopic ellipsometry to determine the complex dielectric function from 1.5 6.0 eV for Hg0.71Cd0.29Te and some of its native oxides. The electrochemically grown anodic oxide was found an absorption threshold near 3 shows features TeO2. no evidence a Te-rich layer between semiconductor. However, after stripping with HCl, residual Te-like optical chemical properties did appear. Thin oxides formed by exposure ozone-containing oxygen had functions similar that but broader edge....
A new phase, most probably antiferromagnetic, is revealed in Invar at high pressures by M\"ossbauer experiments. In ${\mathrm{Fe}}_{0.70}$${\mathrm{Ni}}_{0.30}$ the N\'eel temperature has a slope of +1.9\ifmmode\pm\else\textpm\fi{}0.3\ifmmode^\circ\else\textdegree\fi{}K/kbar with zero-pressure intercept - 41 \ifmmode\pm\else\textpm\fi{} 21\ifmmode^\circ\else\textdegree\fi{}K.
The development of InAsSb detectors based on the nBn design for mid-wave infrared (MWIR) spectral region is discussed. Comparisons optical and electrical properties photodetectors with two different barrier material, namely, AlAs <sub>0.15S</sub>b<sub>0.75</sub> (structure A) AlAs<sub>0.10S</sub>b<sub>0.9</sub> B) are reported. dark current density in AlAs0.15Sb0.85 lower possibly due to larger valence band offset. Clear room temperature responses observed a specific detectivity (D*)...
We report progress in the development of long wavelength infrared (LWIR) focal plane arrays (FPAs) built on type-II strained layer InAs/GaSb superlattice materials. Work at Raytheon Vision Systems and Jet Propulsion Laboratory has led to successful devices with cutoff wavelengths 10 12 μm range. Pixels have been formed by wet etching surface passivation plasma-deposited silicon dioxide. present test results hybridized indium bump bonding readout integrated circuits, as well analyses...
We have analyzed by electron microscopy techniques the effect of deposition a SiO2 passivation layer on an InAs/GaSb type-II superlattice (SL) mesa with applications as photodetector. Our images reveal good conformal coverage upon undulating edge SL mesa. However, we observed scarce As clusters at interface between and some degree oxidation sidewall. The strong reduction in surface leakage currents demonstrates that imperfections do not substantial detrimental capabilities layer.
This paper reviews the historical progress of HgCdTe material and device development at Raytheon Vision Systems starting with initial work in 1965 what was then Santa Barbara Research Center, a subsidiary Hughes Aircraft Company progressing up to present time. Because long history, all details cannot be presented single paper; instead, we focus only on few major accomplishments. In preparation these include: early bulk crystal growth methods; advent liquid phase epitaxial from Hg melts; and,...