An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS2) can be exfoliated an atomically thin layer and compensate for the drawback graphene originating from a gapless band structure. A direct bandgap, which is obtainable in single-layer WS2, attractive characteristic developing optoelectronic devices, well field-effect transistors. However, its relatively low mobility electrical characteristics susceptible to environments remain obstacles...

Graphene/Si Schottky junction solar cells are widely studied in relation to the harvesting of energy, but high efficiency is limited due surface recombination at interface. Moreover, defects, wrinkles, and impurities may arise during wet transfer process graphene. We propose an easy approach fabricate by using directly grown graphene on a textured substrate with large active area. In our novel technique, we grow few layers top Al2O3/Si plasma enhanced chemical vapor deposition. The high-k...

AFM cleaning technique can be a potential tool to clean the surface defects of 2D materials like TMDs, as well graphene.

In this article, we report layer-controlled, continuous and large-area molydenum sulfide (MoS2) growth onto a SiO2/Si substrate by RF sputtering combined with sulfurization. A two-step process was employed to synthesize MoS2 films. the first step, an atomically thin MoO3 film deposited magnetron at 300 °C. Subsequently, as-sputtered further subjected post-annealing sulfurization processes 650 °C for 1 hour. It observed that number of layers can be controlled adjusting time. The fabricated...

Molybdenum disulfide (MoS2) has recently emerged as a promising candidate for fabricating ultrathin-film photovoltaic devices. These devices exhibit excellent performance, superior flexibility, and low production cost. Layered MoS2 deposited on p-Si establishes built-in electric field at MoS2/Si interface that helps in photogenerated carrier separation operation. We propose an Al2O3-based passivation the surface to improve performance of bulklike solar cells. Interestingly, it was observed...

We have developed a doping technique to drastically improve electrical and photoelectric characteristics of WS₂ field-effect transistors.

Molybdenum disulfide (MoS2), which is one of the representative transition metal dichalcogenides, can be made as an atomically thin layer while preserving its semiconducting characteristics. We fabricated single-, bi-, and multilayer MoS2 field-effect transistor (FET) by mechanical exfoliation method studied effect deep ultraviolet (DUV) light illumination. The thickness layers was determined using optical microscope further confirmed Raman spectroscopy atomic force microscopy. FETs with...

We have studied the alignment of liquid crystal adsorbed onto graphene and hexagonal boron nitride by using a polarized optical microscope. From experimental data, it was found that there were 6 different orientations molecules on single substrate. This result has never been reported is quite from other previous results. As lattice threefold rotational symmetry, three expected, but our seems counter-intuitive. explain this considering bending tail molecules. Using anchoring effect with six...

Direct observation of grains and boundaries is a vital factor in altering the electrical optoelectronic properties transition metal dichalcogenides (TMDs), that is, MoSe2 WSe2. Here, we report visualization chemical vapor deposition grown WSe2 on silicon, using optical birefringence two-dimensional layer covered with nematic liquid crystal (LC). An in-depth study was performed to determine alignment orientation LC molecules their correlation other grains. Interestingly, found has discrete...

Synthesis of large-area WS₂ films by direct sulfurization RF-sputtered WO₃ thin on insulating substrates.

Conversion of heat into a spin current by means the Seebeck effect (SSE) is one exciting topics in caloritronics. By use this technique, excess may be transformed valuable electric voltage coupling SSE with inverse Hall (ISHE). In study, thermal gradient and an in-plane magnetic field are used as driving power to mobilize electrons produce SSE. A detected ISHE Ni81Fe19 heterostructure WS2/Pt strip. Using WS2 sheets different thicknesses, we obtained large coefficient 0.72 μV/K, which 12...

MoS₂was directly transferred to graphene, which produced a clean interface between graphene and MoS₂. A high current ON–OFF ratio of ∼10⁶was demonstrated with density ∼10⁵A cm⁻².

We have successfully demonstrated large-area and continuous MoS₂ films grown on indium tin oxide (ITO) substrates by RF sputtering followed a post-annealing process.

Abstract Black Phosphorus (BP) is an excellent material from the post graphene era due to its layer dependent band gap, high mobility and I on /I off . However, poor stability in ambient poses a great challenge for practical long-term usage. The optical visualization of oxidized BP key foremost step successful passivation ambience. Here, we have conducted systematic study oxidation developed technique optically identify using Liquid Crystal (LC). It interesting note that found rapid thin...

The high transmittance and low reflectance of monolayer hexagonal boron nitride (hBN) lead to its invisibility under white-light, causing serious troubles in the search, transfer, fabrication 2D material devices. In this work, we demonstrate enhancing contrast hBN on a transparent substrate by simulation experimental observation, where highest is obtained using polymer-based interfacial layer polydimethylsiloxane (PDMS) substrate. result reveals that short wavelength light higher than long...

Abstract Transition metal dichalcogenides (TMDs) are known for their layered structure and tunable functional properties. However, a unified understanding on other transition chalcogenides (i.e. M 2 X) is still lacking. Here, the relatively new class of copper-based Cu X (X = Te, Se, S) thoroughly reported. synthesized by an unusual vapor–liquid assisted growth Al O 3 /Cu/W stack. Liquid copper plays significant role in synthesizing these systems, sapphire assists with lateral exfoliation....

Nematic liquid crystal (LC) molecules adsorbed on two dimensional materials are aligned along the directions of hexagonal lattice. It was demonstrated that short electric pulses can reorient LC in preferred armchair direction boron nitride (h-BN). Several states with a variety colors were obtained by changing and strength pulses. The ab initio calculations based density functional theory carried out to determine favorable adsorption configurations h-BN surface. A non-volatile display, which...

In this paper, we demonstrate that surface energy of the catalyst is a vital parameter for growth rate, self doping assembled nanowires synthesized by employing vapor liquid solid technique. The synthesis ZnS was done selectively using three different catalysts (Mn, Au, and Sn), where most common catalyst, used as reference. distinctive difference in rate due to metal alloy droplet interface energies, explained theoretically thermodynamic approach. We have found activation diffusion (Zn, S)...

We report the effect of Mn self-doping in catalyzed ZnS nanostructures grown via vapor liquid solid mechanism, which also resulted formation additional impurity minority phases like ZnO and MnO2. The synthesized were subsequently annealed range 500 °C – 700 an inert environment to remove enhance incorporation dopant. Room temperature photoluminescence showed strong defect assisted luminescence. It was observed that green emission due intrinsic defects reduced magnitude related orange/red...

In this paper, we demonstrate that vapor-liquid-solid (VLS) mode of growth can be employed to obtain three-dimensional (3D cubes or 2D platelets) mesoscopic structures with unusual morphologies and sizes using buffer layer assisted (BLA) grown catalysts. The could not by normally deposited catalyst. It is demonstrated the shape contact angle catalyst are key parameters realize such an growth. AFM images BLA Mn nanoparticles showed small area large substrate. VLS was performed in ambient...