Neuromorphic computing (NC) is gaining wide acceptance as a potential technology to achieve low-power intelligent devices. To realize NC, researchers investigate various types of synthetic neurons and synaptic devices, such memristors spintronic In comparison, spintronics-based synapses have potentially higher endurance. However, for realizing domain wall (DW) devices that show DW motion at low energies─typically below pJ/bit─are favored. Here, we demonstrate current densities 106 A/m2 by...

The magnetization reversal induced by spin orbit torques in the presence of Dzyaloshinskii-Moriya interaction (DMI) perpendicularly magnetized Ta/CoFeB/MgO structures were investigated using a combination Anomalous Hall effect measurement and Kerr microscopy techniques. By analyzing in-plane field dependent torque efficiency measurements, an effective value for DMI ~300 Oe was obtained, which plays key role to stabilize Néel walls film stack. imaging reveals that current-induced under small...

Domain-wall memory devices are expected to replace today's hard disk drives, but controlling the position and speed of a domain wall within magnetic nanowire remains challenge. The authors study domain-wall pinning dynamics in constricted nanodevices, find that is very sensitive dimensions constriction. Stability for $m\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}e$ $t\phantom{\rule{0}{0ex}}h\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}n$ $a$...

We report on the marked change in magnetic anisotropy and magnetization reversal Co50Fe50/[Pb(Mg1/3Nb2/3O3)]1−x–[PbTiO3]x (PMN–PT) Co43Ni57/PMN–PT heterostructures under an electric field. For Co50Fe50/PMN–PT structure, electric-field-induced field can be as large 1.2 kOe at 12 kV/cm, corresponding to a magnetoelectric coefficient of 100 Oe cm/kV. In heterostructure, has sign opposite that Co50Fe50/PMN–PT. As result, [CoNi/Cu/CoFe/Cu]n/PMN–PT parallel moment between two layers initial state...

Cost-effective techniques for depositing durable magnetic thin films are essential realizing flexible spintronic devices in wearable and soft robotics applications. Here, we introduce a highly scalable electroless deposition technique coating ferromagnetic Ni80Fe20 onto polyimide polyethylene terephthalate substrates via polydopamine intermediate layer. The resultant demonstrated very good adhesion strength, especially those on substrates, which attained the highest ASTM 3359 rating of 5B...

High efficiency and out-of-plane spin–orbit torque (OOP-SOT) driven magnetization switching is essential for developing spin-based memory logic devices. In this study, we report the generation of a large charge-to-spin conversion bidirectional OOP-SOT by engineering vertical gradient within Co/Ho multilayer system. Exploiting antiferromagnetic coupling between Co Ho, up to 16.8 (emu/cm−3)/nm was achieved gradually varying Ho layer thickness from 0.4 0.9 nm. The presence confirmed through...

In this work, we report a magnonic device capable of dynamic control over magnon propagation. By leveraging voltage-controlled magnetic anisotropy on yttrium iron garnet waveguides, have carried out simulations an active demultiplexer and half-adder designed using inverse design principles. A high output intensity multiplexer was similarly developed via to mitigate the re-emission issue in Y-shaped combiners. Trapezoid electrodes were also introduced minimize losses due gradients across...

In the era of social media, storage information plays an important role. Magnetic domain wall memory devices are promising alternatives to hard disk drives for high‐capacity storage. One challenges in making these practical application is a precise control displacement nanowires. Researchers have extensively studied pinning based on topographical notches fabricated by lithography. However, scaling nanoscale requires better strategies. this letter, we demonstrate that localized modification...

Precise control of domain wall displacement in nanowires is essential for application based memory and logic devices. Currently, walls are pinned by creating topographical notches fabricated lithography. In this paper, we propose localized diffusion non-magnetic metal into ferromagnetic annealing induced mixing as a non-topographical approach to form pinning sites. As first step prove new approach, magnetodynamic properties permalloy (Ni80Fe20) films coated with different capping layers such...

The ability to make devices that mimic the human brain has been a subject of great interest in scientific research recent years. Current artificial intelligence algorithms are primarily executed on von Neumann hardware. This causes bottleneck processing speeds and is not energy efficient. In this work, we have demonstrated synaptic element based magnetic domain wall device. motion was controlled with use synthetic pinning sites, which were introduced by boron (B+) ion-implantation for local...

Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular anisotropy. Our work proposes a technique to modulate the spin reflection and density of states within heavy-metal Pt through interfacing dielectric MgO layer. We demonstrate tunability effective out-of-plane acting on ferromagnetic Co layer, enabling current-induced SOT without assistance an external field. The influence layer thickness...

Spin–orbit torque (SOT) induced magnetization switching and SOT modulation by interfacial coupling exhibit good potential in spintronic devices. In this work, we report the enhancement of damping-like field efficiency up to 60% 23%, respectively, perpendicularly magnetized Pt/Co/HfOx heterostructures over a Pt/Co system at an optimal thickness 2 nm HfOx. The improvement is primarily attributed oxidization Co layer, strength tunable via voltage-induced oxygen ion migration Co/HfOx interface....

Exploring multiple states based on the domain wall (DW) position has garnered increased attention for in-memory computing applications, particularly focusing utilization of spin–orbit torque (SOT) to drive DW motion. However, devices relying require efficient pinning. Here, we achieve granular magnetization switching by incorporating an HfOx insertion layer between Co/Ti interface. This corresponds a transition in model from motion nucleation. Compared conventional Pt/Co/Ti structure,...

In order to improve magnetic hyperthermia and photothermal efficiency, nanoflowers with ellipsoidal cores vortex configuration were synthesized enhance efficacy.

Increasing demand for large capacity data storage can only be fulfilled by hard disk drives (HDDs) and to some extent solid-state (SSDs). However, HDDs are favorable in many applications, as they approximately 5-10 times cheaper than SSDs. Attempts being made increase the of technologies such heat-assisted magnetic recording microwave assisted recording. increasing has been a slow process there limitations achieving areal density above 10 Tbpsi. Thus, introduction new is important attaining...

Neuromorphic computing (NC) is a crucial step toward realizing power-efficient artificial intelligence systems. Hardware implementation of NC expected to overcome the challenges associated with conventional von Neumann computer architecture. Synaptic devices that can emulate rich functionalities biological synapses are emerging. Out several approaches, electrolyte-gated synaptic transistors have attracted enormous scientific interest owing their similar working mechanism. Here, we report...

In order to improve the magnetic heating efficiency, hollow spherical nanoparticles with a vortex configuration were synthesized for enhancing hyperthermia efficacy.

Topological insulators demonstrate high charge-spin conversion efficiency due to their spin-momentum locking at the Dirac surface states. However, states are sensitive disruption caused by exchange coupling when interfaced with a ferromagnet. Here, we use of various nonmagnetic insertion layer materials, $\mathrm{Ti},\phantom{\rule{0.2em}{0ex}}\mathrm{Cu},$ and $\mathrm{Pt}$, $\mathrm{Co}/\mathrm{Bi}$-$\mathrm{Sb}(012)$ interface preserve topological state promote spin-orbit-torque through...

Spin–orbit torque (SOT) is a promising approach to manipulate the magnetization for high-performance spintronic applications. In conventional SOT heterostructures with heavy metal (HM)/ferromagnet layers, efficiency determined by charge-to-spin conversion, characterized spin Hall angle θSH of HM layer. Researchers have investigated various HMs different enhance while it still limited because HM’s intrinsic properties. this study, we employ rare-earth holmium (Ho) layer on top ferromagnetic...

Abstract Artificial synaptic devices capable of synchronized storing and processing information are the critical building blocks neuromorphic computing systems for low-power implementation artificial intelligence. Compared to diverse device structures, emerging electrolyte-gated transistors promising mimicking biological synapses owing their analogous working mode. Despite remarkable progress in transistors, study metallic channel-based remains vastly unexplored. Here, we report a...