A5023516435- Magnetic properties of thin films
- Advanced Memory and Neural Computing
- Physics of Superconductivity and Magnetism
- Magnetic Properties and Applications
- Ferroelectric and Negative Capacitance Devices
- Quantum and electron transport phenomena
- Magnetic and transport properties of perovskites and related materials
- ZnO doping and properties
- Characterization and Applications of Magnetic Nanoparticles
- Theoretical and Computational Physics
- Semiconductor materials and devices
- Graphene research and applications
- Photonic and Optical Devices
- Neuroscience and Neural Engineering
- Nanoporous metals and alloys
- Electronic and Structural Properties of Oxides
- Advanced Condensed Matter Physics
- Advanced biosensing and bioanalysis techniques
- Perovskite Materials and Applications
- Multiferroics and related materials
- Conducting polymers and applications
- Advanced Radiotherapy Techniques
- Magneto-Optical Properties and Applications
- Advanced Fiber Optic Sensors
- Molecular Junctions and Nanostructures
Nanyang Technological University
2016-2025
Tunku Abdul Rahman University of Management and Technology
2019
University of Cambridge
2000-2012
Data Storage Institute
2012
Agency for Science, Technology and Research
2012
Bridge University
2006
Cavendish Hospital
2003
The commercial implementation of aqueous Zn-ion batteries is being impeded by the rampant dendrite growth and exacerbated side reactions on Zn metal anodes. Herein, a 60 nm artificial protective layer with spatial dielectric–metallic gradient composition (denoted as GZH) developed via HfO2 cosputtering. In this design, top high permittivity low electronic conductivity effectively suppresses hydrogen evolution. intermediate Zn-rich oxide region promotes dendrite-free deposition reinforces...
Hardware neural networks with mechanical flexibility are promising next-generation computing systems for smart wearable electronics. Overcoming the challenge of developing a fully synaptic plastic network, we demonstrate low-operating-voltage PET/ITO/p-MXene/Ag flexible memristor device by controlling etching aluminum metal ions in Ti3C2Tx MXene. The presence small fraction Al partially etched MXene (p-Ti3C2Tx) significantly suppresses operating voltage to 1 V compared 7 from...
A novel magnetic field fiber sensor based on fluid is proposed. The configured as a Sagnac interferometer structure with film and section of polarization maintaining inserted into the loop to produce sinusoidal interference spectrum for measurement. output shifted change applied strength sensitivity 16.7 pm/Oe resolution 0.60 Oe. optical power varied 0.3998 dB/Oe.
A novel magnetic field sensor based on the fluid and Mach-Zehnder interferometer is proposed. The takes advantage of tunable refractive index property modal interference collapsed photonic crystal fiber. achieved sensitivity resolution are 2.367 pm/Oe 4.22 Oe, respectively. insensitive to temperature variation with a coefficient 3.2 pm/°C.
A linear array of periodically spaced and individually controllable skyrmions is introduced as a magnonic crystal. It numerically demonstrated that skyrmion nucleation annihilation can be accurately controlled by nanosecond spin polarized current pulse through nanocontact. Arranged in periodic array, such nanocontacts allow the creation lattice causes modulation waveguide's magnetization, which dynamically changing either strength an applied external magnetic field or density injected...
Magnetic skyrmions are particle-like magnetization configurations which can be found in materials with broken inversion symmetry. Their topological nature allows them to circumvent around random pinning sites or impurities as they move within the magnetic layer, makes interesting information carriers memory devices. However, when skyrmion is driven by a current, Magnus force generated leads moving away from direction of conduction electron flow. The deflection poses serious problem...
We report a systematic investigation of the temperature dependence electrical resistance behaviours in tri- and four-layer graphene interconnects. Nonlinear current-voltage characteristics were observed at different temperatures, which are attributed to heating effect. With curve derivative analysis method, our experimental results suggest that Coulomb interactions play an essential role devices. The room measurements further indicate layers exhibit semiconductors mainly due scattering...
3D printing via vat photopolymerization (VP) is a highly promising approach for fabricating magnetic soft millirobots (MSMRs) with accurate miniature structures; however, filler materials added to resin either strongly interfere the photon energy source or sediment too fast, resulting in nonuniformity of distribution failed prints, which limits application VP. To this end, circulating (CVP) platform that can print MSMRs high uniformity, particle loading, and strong response presented. After...
Abstract Covalent organic polymers (COPs) memristors with multilevel memory behavior in harsh environments and photoelectric regulation are crucial for high‐density storage high‐efficiency neuromorphic computing. Here, a donor–acceptor (D–A)‐type COP film (Py‐COP‐3), which is initiated by keto–enol tautomerism, proposed high‐performance memristors. Satisfactorily, the indium tin oxide (ITO)/Py‐COP‐3/Ag device demonstrates performance, even high temperatures, acid‐base corrosion, various...
Pyridinium-templated one-dimensional (1D) halide perovskites are studied as crossbar memristive materials for artificial neural networks with higher on–off ratios, enhanced endurance, and superior retention characteristics.
Neuromorphic platforms are gaining popularity due to their superior efficiency, low power consumption, and adaptable parallel signal processing capabilities, overcoming the limitations of traditional von Neumann architecture.
Abstract The field of optoelectronic integrated circuits is actively developing reliable and efficient room‐temperature continuous‐wave (CW) lasers. CW‐pumped lasers combine the economical simple manufacturing processes colloidal semiconductor with stable output continuous pumping, enabling them to significantly impact However, development still severely challenged by limitations such as gain materials cavity structures. Consequently, a compromise, most proposed date have relied on another...
A magneto-optic modulator with a magnetic fluid film inserted into an optical fiber Sagnac interferometer is proposed. The exhibits variable birefringence and Faraday effect under external field that will lead to phase difference polarization state rotation in the interferometer. As result, intensity of output light modulated field. Moreover, has high extinction ratio can easily be integrated single-mode system. performance not affected by ambient temperature variation from room 40 °C.
We demonstrate numerically that skyrmions can be transported efficiently with a voltage-controlled stepped magnetic anisotropy gradient.
Abstract The Rashba effect plays important roles in emerging quantum materials physics and potential spintronic applications, entailing both the spin orbit interaction (SOI) broken inversion symmetry. In this work, we devise asymmetric oxide heterostructures of LaAlO 3 //SrTiO /LaAlO (LAO//STO/LAO) to study STO with an initial centrosymmetric structure, symmetry is created by inequivalent bottom top interfaces due their opposite polar discontinuities. Furthermore, report observation a...
The bipolar resistive switching (RS) characteristics of the ZnO-based TiN/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /ZnO/Al /TiN structure are investigated for flexible nonvolatile memory applications. Using a thin Al buffer layer on both sides ZnO device shows uniform and eminently stable resistance characteristics. exhibits good RS with more than two orders ON-OFF ratio,...
The magnetization reversal induced by spin orbit torques in the presence of Dzyaloshinskii-Moriya interaction (DMI) perpendicularly magnetized Ta/CoFeB/MgO structures were investigated using a combination Anomalous Hall effect measurement and Kerr microscopy techniques. By analyzing in-plane field dependent torque efficiency measurements, an effective value for DMI ~300 Oe was obtained, which plays key role to stabilize Néel walls film stack. imaging reveals that current-induced under small...
Abstract Domain wall (DW) based logic and memory devices require precise control manipulation of DW in nanowire conduits. The topological defects Transverse DWs (TDW) are paramount importance as regards to the deterministic pinning movement within complex networks In-situ conduits may pave way for novel applications. In this work, we present a geometrical modulation along conduit, which allows rectification/inversion TDW nanowires. This is achieved by exploiting controlled relaxation an...
The use of crystalline metal-organic complexes with definite structures as multilevel memories can enable explicit structure-property correlations, which is significant for designing the next generation memories. Here, four Zn-polysulfide different degrees conjugation have been fabricated memory devices. ZnS6(L)2-based (L = pyridine and 3-methylpyridine) exhibit only bipolar binary performances, but ZnS6(L)-based 2,2'-bipyridine 1,10-phenanthroline) illustrate non-volatile ternary...
Organic electrochemical transistors (OECTs) are a generation of with high transconductance, where the whole volume semiconducting channel is involved in doping process. However, use liquid electrolytes limits application OECTs, and process also complicated due to presence water electrolyte. In this study, thermoplastic polyurethane (TPU)-based solid electrolyte was used OECTs for first time. Three types ionic liquids were blended TPU polymer matrix as investigated on based three kinds p-type...
We report on the influence of pinning potentials current-driven skyrmion dynamics and demonstrate that skyrmions can be gated via either magnetic or electric fields. When encountering potentials, are well known to simply skirt around them. However, we show depinned much more easily when their driving force is oriented against site rather intuitive option being away. This observation exploited together with normally undesirable Magnus for creation a diode. The phenomenon explained by...
We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I-V) measurements revealed Schottky emission (SE) as dominant mechanism in high resistance state (HRS), which was validated by varying temperatures transmission electron microscopy (TEM) results. Retention more than 10 years at 85 °C obtained for both RSM In addition, annealing processes greatly improved consistency HRS LRS paths from cycle to cycle, exhibiting...