Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as versatile class of nanoscale materials control lattice strain engineer complex heterostructures leading development variety innovative applications. Herein we exploit quasi-two-dimensional platform tune simultaneously parameter bandgap energy group IV GeSn alloys. As Sn...

The availability of high-frequency pulsed emitters in the 2–2.5 μm wavelength range paved way for a wealth new applications ultrafast spectroscopy, free-space and fiber-optical communications, surveillance recognition, artificial intelligence, medical imaging. However, developing these emerging technologies their large-scale use depend on high-speed, low-noise, cost-effective photodetectors. With this perspective, here we demonstrate GeSn photodiodes grown silicon wafers featuring high...

The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs have been the subject extensive investigations because their bandgap tunability compatibility. However, due growth defects, these suffer a relatively high dark current density as compared commercial III-V PDs. Herein, we elucidate mechanisms governing in $2.6...

Sn-containing group IV semiconductors create the possibility to independently control strain and band gap thus providing a wealth of opportunities develop an entirely new class low dimensional systems, heterostructures, silicon-compatible electronic optoelectronic devices. With this perspective, work presents detailed investigation structure strained relaxed Ge1−x−ySixSny ternary alloys using semi-empirical second nearest neighbors tight binding method. This method is based on accurate...

Silicon-compatible short- and midwave infrared emitters are highly sought after for on-chip monolithic integration of electronic photonic circuits to serve a myriad applications in sensing communication. Commercially available light-emitting diodes (LEDs) predominantly made III–V materials, which costly not silicon-compatible. These materials suffer degraded performance if the emitting wavelength is longer than 2.35 μm. To address this long-standing challenge, GeSn semiconductors have been...

We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable any semiconductor heterostructure. By exploiting our experimental insights into three-dimensional atomic landscape obtained Ge/GeSi heterointerfaces atom probe tomography, we have been able to define full set of parameters relevant potential, including both in-plane axial correlation inside real diffuse interfaces. Our findings indicate partial coherence along...

Abstract The short‐wave infrared (SWIR) is an underexploited portion of the electromagnetic spectrum in metasurface‐based nanophotonics despite its strategic importance sensing and imaging applications. This mainly attributed to lack material systems tailor light–matter interactions this range. Herein, limitation addressed all‐dielectric silicon‐integrated metasurface enabling polarization‐induced Fano resonance control at SWIR frequencies demonstrated. platform consists a 2D Si/Ge 0.9 Sn...

Compound semiconductors have been the predominant building blocks for current midinfrared thermophotovoltaic devices relevant to sub- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$2000 \,\mathrm{K}$</tex-math></inline-formula> heat conversion and power beaming. However, prohibitively high cost associated with these technologies limits their broad adoption. Herein, alleviate this challenge we introduce an...

Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with enhanced lattice strain relaxation in Ge/Ge0.92Sn0.08 core-shell nanowire heterostructures implement highly responsive, room-temperature short-wave nanoscale photodetectors. Atomic-level studies confirm uniform shell composition its higher crystallinity respect thin films...

By independently engineering strain and composition, this work demonstrates investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend room-temperature wavelength above ~4.0 {\mu}m upon post-growth relaxation with uniform Sn content of 17 at.%. The fundamental mechanisms governing optical are discussed based temperature-dependent photoluminescence, absorption measurements, theoretical simulations. Regardless these analyses confirm that...

The quiet quantum environment of holes in solid-state devices is at the core increasingly reliable architectures for processors and memories. However, due to lack scalable materials properly tailor valence band character its energy offsets, precise engineering light-hole (LH) states remains a serious obstacle toward coherent optical photon-spin interfaces needed direct mapping information encoded photon flying qubits stationary spin processors. Herein, alleviate this long-standing...

The interfacial abruptness and uniformity in heterostructures are critical to control their electronic optical properties. With this perspective, work demonstrates the three-dimensional (3D) atomic-level mapping of roughness buried epitaxial interfaces Si/SiGe superlattices with a layer thickness 1.5–7.5 nm range. Herein, 3D atom-by-atom maps were acquired processed generate isoconcentration surfaces highlighting local fluctuations content at each interface. These generated subsequently...

Engineering light absorption in the extended short-wave infrared (ESWIR) range using scalable materials is a long-sought-after capability that crucial to implement cost-effective and high-performance sensing imaging technologies. Herein, we demonstrate enhanced, tunable ESWIR silicon-integrated platforms consisting of ordered arrays metastable ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}$ nanowires with Sn content reaching 9 at.% variable diameters. Detailed simulations are combined...

Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential impact group IV semiconductor devices. Indeed, ability independently engineer both lattice parameter band gap holds premise develop enhanced or novel photonic, optoelectronic, electronic With this perspective, we present detailed investigations influence Ge1-y-xSixSny layers on optical properties Si- Ge-based heterostructures nanowires. We found that adding a thin Ge1-x-ySixSny capping layer...

GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic sensing platforms. Exploiting these requires, however, the control of their epitaxy surface chemistry to reduce non-radiative recombination hinders efficiency optoelectronic devices. Herein, we demonstrate a combined sulfur- iodine-based treatments yields effective passivation Ge Ge0.9Sn0.1 surfaces. X-ray photoemission spectroscopy in situ...

The p-symmetry of the hole wavefunction is associated with a weaker hyperfine interaction, which makes spin qubits attractive candidates to implement quantum processors. However, recent studies demonstrate that are still very sensitive nuclear bath, thus highlighting need for spin-free germanium (Ge) suppress this decoherence channel. Herein, work demonstrates epitaxial growth

${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}$ semiconductors have promise for large-scale, monolithic, midinfrared photonics and optoelectronics. However, despite the successful demonstration of several ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}$-based photodetectors emitters, key fundamental properties this material system are yet to be fully explored understood. In particular, little is known about role in controlling recombination mechanisms their consequences carrier...

Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of electromagnetic spectrum covering infrared to terahertz wavelengths. However, epitaxial growth these at a thickness few micrometers has been challenging task due lattice mismatch and its associated instabilities resulting from formation defects. To elucidate limits, we outline herein process strain-balanced on silicon 11.1/21.5 nm Ge/Si0.18Ge0.82...

Atom Probe Tomography (APT) has significantly advanced our ability to characterize buried interfaces and map the three-dimensional distribution of atomic constituents like dopants in modern day electronic nano-devices. This precise mapping chemical composition is also highly sought-after implementation optimization a variety emerging photonic devices with dimensions up several micrometers as opposed few ten nanometers transistors. Herein, we show that APT poised contribute development these...

The thermal budget is highly critical in processing the emerging group IV Silicon-Germanium-Tin (SiGeSn) optoelectronic devices. These semiconductors exhibit a fundamental direct bandgap covering mid-infrared range at Sn contents above 10 at. %, which an order of magnitude higher than equilibrium solubility. Consequently, device steps must be carried out temperatures low enough to prevent degradation these metastable layers. However, conventional fabrication methods often require deposition...

The complex relative permittivity of doped Ge1−xSnx thin films (realized using state-of-the-art growth techniques) are obtained by devising a methodology based upon polarization-dependent reflection measurements along with multi-layer Fresnel equations. developed approach is implemented to acquire the 170-nm-thick film exhibiting hole carrier concentration 3.3 × 1019 cm−3 and x = 6.2%, this Sn composition suggesting on cusp direct bandgap. investigation conducted as well expected further...

In recent years, direct band gap GeSn semiconductors have gained major attention for the monolithic integration of infrared emitters and detectors on a Si wafer.[1] A variety sensing imaging technologies are now being developed using industrial-compatible fabrication processes. addition to high potential in photonic technologies, quantum materials been proposed design novel solid-state qubits architectures.[2-3] Tensile-strained Ge/GeSn wells (QWs) grown wafer result confined 2D hole gas...

The first part of this work reports on detailed studies the influence both strain and composition band structure GeSiSn ternary alloys. First, we developed a simple yet rigorous semi-empirical second nearest neighbors tight binding sp 3 s * method that incorporates effect substitutional disorder. We have found α-Sn at direct to indirect crossover alloy decreases from 11% in fully relaxed 7% tensile strained (for value 0.71%). In latter case, considered thin layer is epitaxialy grown Ge...

Ge$_{1-x}$Sn$_x$ semiconductors hold the premise for large-scale, monolithic mid-infrared photonics and optoelectronics. However, despite successful demonstration of several Ge$_{1-x}$Sn$_x$-based photodetectors emitters, key fundamental properties this material system are yet to be fully explored understood. In particular, little is known about role in controlling recombination mechanisms their consequences on carrier lifetime. Evaluating latter fact fraught with large uncertainties that...

A method based on complementary transmission and reflection measurements is developed to determine the complex refractive index of an ultrathin layer, despite no knowledge substrate's absorption loss. Such a technique avoids error introduced by conventional methods in which extinction coefficient substrate extracted from different region wafer, or entirely reference wafer. This implemented terahertz (THz) highly doped (i.e., >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...