A5044247637- Nanowire Synthesis and Applications
- Electronic and Structural Properties of Oxides
- Semiconductor Quantum Structures and Devices
- Topological Materials and Phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Quantum and electron transport phenomena
- Physics of Superconductivity and Magnetism
- Semiconductor materials and devices
- Quantum Dots Synthesis And Properties
- Electrocatalysts for Energy Conversion
- ZnO doping and properties
- 2D Materials and Applications
- Electron and X-Ray Spectroscopy Techniques
- Advanced Photocatalysis Techniques
- Graphene research and applications
- Advanced Thermoelectric Materials and Devices
- Advanced battery technologies research
- Photonic and Optical Devices
- Catalytic Processes in Materials Science
- Machine Learning in Materials Science
- Chalcogenide Semiconductor Thin Films
- Thermal Radiation and Cooling Technologies
- Surface and Thin Film Phenomena
- Ga2O3 and related materials
- Thermal properties of materials
Institut Català de Nanociència i Nanotecnologia
2016-2025
Institut de Nanociència i Nanotecnologia de la Universitat de Barcelona
2023
Universitat Autònoma de Barcelona
2023
Consejo Superior de Investigaciones Científicas
2017-2019
Institute of Science and Technology
2016
Shanghai Institute for Science of Science
2016
Barcelona Institute for Science and Technology
2016
Atom-thin transition metal dichalcogenides (TMDs) have emerged as fascinating materials and key structures for electrocatalysis. So far, their edges, dopant heteroatoms defects been intensively explored active sites the hydrogen evolution reaction (HER) to split water. However, grain boundaries (GBs), a type of in TMDs, overlooked due low density large structural variations. Here, we demonstrate synthesis wafer-size atom-thin TMD films with an ultra-high-density GBs, up ~1012 cm-2. We...
Abstract One of the critical factors determining performance neural interfaces is electrode material used to establish electrical communication with tissue, which needs meet strict electrical, electrochemical, mechanical, biological and microfabrication compatibility requirements. This work presents a nanoporous graphene-based thin-film technology its engineering form flexible interfaces. The developed allows fabrication small microelectrodes (25 µm diameter) while achieving low impedance...
In the present work, we demonstrate crystallographically textured n-type Bi2Te3–xSex nanomaterials with exceptional thermoelectric figures of merit produced by consolidating disk-shaped colloidal nanocrystals (NCs). Crystallographic texture was achieved hot pressing asymmetric NCs in presence an excess tellurium. During press, tellurium acted both as lubricant to facilitate rotation lying close normal pressure axis and solvent dissolve approximately aligned direction, which afterward...
Topological qubits based on Majorana fermions have the potential to revolutionize emerging field of quantum computing by making information processing significantly more robust decoherence. Nanowires (NWs) are a promising medium for hosting these kinds qubits, though branched NWs needed perform qubit manipulations. Here we report gold-free templated growth III-V molecular beam epitaxy using an approach that enables patternable and highly regular NW arrays far greater scale than what has been...
We introduce selective area grown hybrid $\mathrm{InAs}/\mathrm{Al}$ nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap unpoisoned $2e$-periodic Coulomb blockade, with temperature dependent $1e$ features in agreement theory. peak spacing parallel magnetic field displays overshoot, indicating an oscillating discrete near-zero subgap state consistent device length. Finally, we...
Selective-area growth is a promising technique for enabling of the fabrication scalable III–V nanowire networks required to test proposals Majorana-based quantum computing devices. However, contours parameter window resulting in selective remain undefined. Herein, we present set experimental techniques that unambiguously establish space by molecular beam epitaxy. Selectivity maps are constructed both GaAs and InAs compounds based on situ characterization kinetics GaAs(001) substrates, where...
Bottom-up approaches for producing bulk nanomaterials have traditionally lacked control over the crystallographic alignment of nanograins. This limitation has prevented nanocrystal-based from achieving optimized performances in numerous applications. Here we demonstrate production nanostructured BixSb2–xTe3 alloys with controlled stoichiometry and texture through proper selection starting building blocks adjustment nanocrystal-to-nanomaterial consolidation process. In particular, hot pressed...
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to information applications has been challenging. Here, we study the of selective area growth by molecular beam epitaxy InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and strong enhancement field effect mobility. We show possess...
The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable high-fidelity quantum information technology. High-mobility planar germanium a front-runner semiconductor building processors with spin-qubits, but progress hybrid superconductor-semiconductor devices hindered because obtaining superconducting gap free subgap states (hard gap) has proven difficult. Here we solve this challenge by developing low-disorder, oxide-free interface...
Sn- and Bi-doped Cu<sub>3</sub>SbSe<sub>4</sub>-based thermoelectric devices.
Mn3O4@CoMn2O4 nanoparticles (NPs) were produced at low temperature and ambient atmosphere using a one-pot two-step synthesis protocol involving the cation exchange of Mn by Co in preformed Mn3O4 NPs. Selecting proper cobalt precursor, nucleation CoxOy crystallites surface could be simultaneously promoted to form Mn3O4@CoMn2O4–CoxOy Such heterostructured NPs investigated for oxygen reduction evolution reactions (ORR, OER) alkaline solution. with [Co]/[Mn] = 1 showed overpotentials 0.31 V −3...
Abstract The modification of nickel with boron or phosphorus leads to significant enhancement its electrocatalytic activity for the oxygen evolution reaction (OER). However, precise role guest elements, B and P, in enhancing OER host element (Ni) remains unclear. Herein, we present insight into P electrocatalysis by borides phosphides. apparent activation energy, E a *, on Ni 2 was 78.4 kJ/mol, 65.4 nanoparticles 94.0 thus revealing that both affect intrinsic nickel. XPS data revealed shifts...
Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing the design of heterostructures with complex material combinations and geometries. In this work we report epitaxy freestanding vapor–liquid–solid grown in-plane selective area semiconductor–ferromagnetic insulator–superconductor (InAs/EuS/Al) nanowire heterostructures. We study crystal matching wurtzite zinc-blende InAs/rock-salt EuS interfaces well rock-salt EuS/face-centered cubic Al...
In the quest for more efficient thermoelectric material able to convert thermal electrical energy and vice versa, composites that combine a semiconductor host having large Seebeck coefficient with metal nanodomains provide phonon scattering free charge carriers are particularly appealing. Here, we present our experimental results on transport properties of PbS-metal produced by versatile particle blending procedure, where work function allows injecting electrons intrinsic PbS host. We...
Hole gases in planar germanium can have high mobilities combination with strong spin-orbit interaction and electrically tunable g-factors, are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards Ge-based quantum technologies is the design of high-quality interfaces superconducting contacts that robust against magnetic fields. In this work, by combining assets aluminum, which provides good contact to Ge, niobium, has...
Hybrid semiconductor-superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low dimensionality crystal structure flexibility facilitate unique heterostructure growth efficient material optimization, crucial prerequisites accurately constructing complex multicomponent quantum materials. Here, we present an extensive study Sn on InSb, InAsSb, InAs demonstrate how drives formation either semimetallic...
The organization of nanowires on surfaces remains a major obstacle toward their large-scale integration into functional devices. Surface–material interactions have been used, with different materials and substrates, to guide horizontal during growth well-organized assemblies, but the only guided nanowire heterostructures reported so far are axial not radial. Here, we demonstrate core–shell nanowires, specifically ZnSe@ZnTe, control over crystal phase crystallographic orientations. We exploit...
Selective area growth is a promising technique to realize semiconductor–superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective conditions do not necessarily overlap. To overcome this challenge, we propose metal-sown (MS SAG) technique, which allows decoupling deposition by temporarily isolating these stages. It consists...
The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where two opposite orientations the same crystallographic direction are possible. Interestingly, their physical properties (e.g., electronic or photonic) and morphological features shape, growth direction, so forth) also strongly depend on polarity. It has been observed that nanoscale materials tend to grow with a specific polarity, which can eventually be reversed for very conditions. In addition,...
Abstract Germanium (Ge) nanowires hold great promise as building blocks for hole spin‐based quantum processors. Realizing this potential requires their direct integration onto silicon (Si) wafers. This work introduces V‐groove‐confined selective epitaxy to enable the in‐plane growth of on Si substrates. Nanowires form fully confined within V‐shaped grooves, a process driven by surface energy minimization and in agreement with Winterbottom‐like construction calculations. confinement...
The design and engineering of earth-abundant catalysts that are both cost-effective highly active for water splitting crucial challenges in a number energy conversion storage technologies. In this direction, herein we report the synthesis Fe3O4@NiFexOy core–shell nanoheterostructures characterization their electrocatalytic performance toward oxygen evolution reaction (OER). Such nanoparticles (NPs) were produced by two-step procedure involving colloidal Fe3O4 nanocubes with defective shell...
Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity their bonds. Nanowires grow mostly along (111) direction for energetic reasons. Arsenide and phosphide nanowires (111)B, implying group V termination bilayers. Polarity engineering provides additional pathway to modulate structural optical properties semiconductor nanowires. In this work, we demonstrate first time growth Ga-assisted GaAs with (111)A-polarity, yield up ∼50%. This goal is achieved by...
III-V integration on Si(100) is a challenge: controlled vertical vapor liquid solid nanowire growth this platform has not been reported so far. Here we demonstrate an atypical GaAs nanostructure Si(100), coined nanospade, obtained by nonconventional droplet catalyst pinning. The Ga positioned at the tip of ultrathin Si pillar with radial oxide envelope. pinning Si/oxide interface allows engineering contact angle beyond Young-Dupré equation and nanospades. Nanospades exhibit virtually...
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of InAs/EuS analyze the atomic-scale structure characteristics. The Fermi level at interface is found be close InAs conduction band in gap EuS, thus preserving semiconducting properties. Both neutron X-ray reflectivity measurements show that overall...