A5037735349- Thermal properties of materials
- Advancements in Semiconductor Devices and Circuit Design
- Molecular Junctions and Nanostructures
- Topological Materials and Phenomena
- Semiconductor materials and devices
- 2D Materials and Applications
- Digital Filter Design and Implementation
- Heat Transfer and Boiling Studies
- Silicon Carbide Semiconductor Technologies
- Advanced Sensor Technologies Research
- Advanced MEMS and NEMS Technologies
- Advanced Adaptive Filtering Techniques
- Advanced Data Compression Techniques
Xi'an Jiaotong University
2022-2023
Micro & Nano Research Institute
2022
In this article, an analytical thermal conductivity model considering the degradation caused by different phonon scattering mechanisms is presented for studying self-heating effects (SHEs) in ultrathin body and buried oxide (UTBB) silicon-on-insulator (SOI) MOSFETs. By allowing phonon-boundary phonon–electron scattering, as well tuning surface roughness, enables accurate predictions silicon films of thicknesses over a wide temperature range. order to apply temperature-dependent self-built...
Low-frequency electronic noise is an important parameter used for the and sensing applications of transistors. Here, we performed a systematic study on low-frequency mechanism both p-channel n-channel MoTe
An improved physical model was proposed for accurate electrothermal modeling Pirani vacuum gauges (PVG) by accounting the micro-nano scale effects of heat transfer in sensitive elements and non-negligible corner dissipation from multiple sinks. This is verified published experimental data can reveal influences geometrical, process parameters, such as device dimensional size, temperature doping concentrations, on process, which a great consideration microelectromechanical systems (MEMS) PVG...
In this article, the influence of self-heating effects (SHEs) and ambient temperature coupling on thermal resistance double silicon-on-insulator (SOI) MOSFETs was investigated by experiment simulation methods. A simple efficient measurement technique, namely, bulk–source diode method, used to extract double-SOI (DSOI) devices at different temperatures. The experimental results show that DSOI decreases with increasing temperature, which is from conventional MOSFET devices. To further analyze...
This brief presents a higher-order vector DEM for multibit discrete-time (DT) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol\Sigma\boldsymbol\Delta$</tex-math> </inline-formula> modulators ( Ms) to achieve higher linearity. By using the proposed filter (VF) with poles-splitting technique, root locus outside unit circle of can be eliminated, leading DAC mismatch-shaping stability will not...