A5000608574- CCD and CMOS Imaging Sensors
- Advanced Optical Sensing Technologies
- Particle Detector Development and Performance
- Ocular and Laser Science Research
- Radiation Detection and Scintillator Technologies
- Thin-Film Transistor Technologies
- Medical Imaging Techniques and Applications
- Superconducting and THz Device Technology
- Topological Materials and Phenomena
- Advanced Fiber Optic Sensors
- Analytical Chemistry and Sensors
- Advanced Fluorescence Microscopy Techniques
- Advanced Measurement and Metrology Techniques
- Optical measurement and interference techniques
- Infrared Target Detection Methodologies
- Molecular Junctions and Nanostructures
- 2D Materials and Applications
- Atomic and Subatomic Physics Research
- Photonic and Optical Devices
- Analog and Mixed-Signal Circuit Design
Xi'an Jiaotong University
2021-2024
Micro & Nano Research Institute
2022-2024
Institut de Recherche Dupuy de Lôme
2004
Low-frequency electronic noise is an important parameter used for the and sensing applications of transistors. Here, we performed a systematic study on low-frequency mechanism both p-channel n-channel MoTe
The thermionic emission mechanism is usually employed to model the charge packet, which not affected by potential barrier; however, electric fields induced itself are included in previous work. We introduce a proposed physical-based characterize whole behavior characteristics of pinned photodiode (PPD) when employing thermal diffusion, self-induced drifting, and mechanisms together. In addition, dynamic PPD parameters such as capacitance ( <inline-formula...
A 320 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> 240 indirect time-of-flight (i-ToF) image sensor with a 5.6- notation="LaTeX">$\mu \text{m}$ two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure modulator (PGM), are proposed to achieve maximum...
A pixel-level compact numerical model, including input optical, pixel parameter, modulation gate clock, and readout noise for indirect time-of-flight (i-ToF) sensor, is proposed. The contrast (Cmod) of the depth characteristics, accuracy noise, are obtained with iterative Monte Carlo methods. rationality demodulation process verified through parameter Cmod technology computer-aided design (TCAD) simulation test. Then, prediction results under nonideal conditions obtained, which consistent...
This paper proposes a straightforward method for measuring micro-displacement synchronously along two orthogonal axes. A single structure consists of pair two-dimensional gratings and quadrant detector aligned with collimated laser is used to detect the micro-displacement. The crosstalk common-mode noise are eliminated through two-step differential process. Experimental results demonstrate that displacement measurement resolution can reach 40 nm sensitivity 0.483 V/µm within linear range....
This paper proposes a low power 320×240 indirect time of flight (i-ToF) vision system with non-linearity self-calibration technique. A pump gate modulator (PGM) technique is applied in the pixel to reduce consumption modulation. As result, has higher lateral electric field lower voltage swing modulation and can operate depletion state achieve smaller load capacitance. To improve sensor, techniques are proposed. It includes channel toggle pre-distortion single slop analog-to-digital converter...
By using the MOS-based model established in this paper, physical process of photoelectron generation, transfer, and storage four-transistor active pixel sensor (4T-APS) pixels can be simulated SPICE environment. The variable capacitance characteristics double junctions pinned photodiodes (PPDs) threshold voltage difference formed by channel nonuniform doping transfer gates (TGs) are considered with model. charge photogenerated electrons from PPDs to floating diffusion (FD) is analyzed,...
This paper presents a 320×240 indirect time of flight (I-ToF) image sensor with 5.6μm×5.6μm 2-Tap pixel in 110nm process. The readout channel offset cancellation and nonlinearity suppression techniques are proposed to achieve high-precision detection. measured relative precision is 1% at 5m target distance non-linearity below 1.02%. chip also integrates LVDS I2C interface for data transmission Laser control. work effectively improved the ranging accuracy simple method.
This article presents a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3.5 ~\mu \text{m}$ </tex-math></inline-formula> stacked backside-illuminated (BSI) indirect time-of-flight (i-ToF) pixel fabricated in 65-nm CMOS image sensors (CIS) process. Transfer gate-induced lateral electric field control of charge transfer is one the most relied techniques for implementing i-ToF sensors. However, gate as...