A5071838488- 2D Materials and Applications
- MXene and MAX Phase Materials
- Advanced Photocatalysis Techniques
- Semiconductor materials and devices
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Advancements in Semiconductor Devices and Circuit Design
- ZnO doping and properties
- Ga2O3 and related materials
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Graphene research and applications
- Gas Sensing Nanomaterials and Sensors
- Semiconductor Quantum Structures and Devices
- Luminescence Properties of Advanced Materials
- Copper Interconnects and Reliability
- Quantum Dots Synthesis And Properties
- Nanowire Synthesis and Applications
- Advanced Semiconductor Detectors and Materials
- Boron and Carbon Nanomaterials Research
- Solid State Laser Technologies
- Advanced ceramic materials synthesis
- Copper-based nanomaterials and applications
- Radiation Detection and Scintillator Technologies
- Integrated Circuits and Semiconductor Failure Analysis
Chang'an University
2015-2024
Institute of Physics
2021
Shandong University
2021
Jangan University
2019-2020
China XD Group (China)
2020
Xidian University
2012-2016
A Schottky UV photodetector based on graphene/ZnO:Al nanorod-array-film (AZNF) structure has been fabricated. Different from the previously reported graphene/ZnO photodetectors, this a stable barrier which does not disappear under light. Thus, can work as high-performance self-powered device. The key to improve stability of is two-step surface treatment process. As result, exhibits UV-to-visible rejection ratio about 1 × 102, responsivity 0.039 W1-, short rise time 37 μs, and decay 330 μs....
The electronic properties of an Sb/InSe heterostructure are investigated by using the density functional theory method. A type-II staggered-gap band alignment is achieved from vdW with Sb layer dominates lowest energy holes as well electrons contributed InSe layer, which facilitates spatial effective separation photogenerated electron-hole pairs. Additionally, indirect-direct gap transition can be triggered via varying interlayer distance. More fascinatingly, characteristic robust, while...
In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate electronic capabilities of SiC/InSe heterostructures. According our results, heterostructure possesses an inherent type-II band alignment, which displays a noticeable Stark effect gap under stable electric field. Besides, exhibits low carrier effective mass and narrower when it is subject tensile strain. More interestingly, transition from indirect direct occurs 8%...
In this study, first-principles calculations were used to investigate in detail the structural, electronic, optical, and photocatalytic properties of PtS 2 /GeC heterostructures.
Graphene/silicon heterojunction photodetectors suffer from a high dark current due to the surface states and low barrier height at interface, which limits their application. In this study, we introduce an HfOx interfacial layer via magnetron sputtering address issue. With new structure, is reduced by six times under bias voltage of −2 V. Under 460 nm illumination, responsivity 0.228A/W, detectivity 1.15 × 1011 cmHz1/2W−1, noise equivalent power 8.75 10−5 pW/Hz1/2, demonstrating excellent...
Well-controlled band engineering of a blue phosphorus/C2N van der Waals (vdW) heterojunction is investigated by density functional theory (DFT) calculations. The has natural type-II alignment with direct gap value 1.514 eV, which gives the enormous potential for solar cell applications. When under illumination, photogenerated electron-hole pairs can separate out on disparate monolayers effectively. It induces formation spatially indirect excitons. Furthermore, it found that this exhibits...
In order to solve the current energy and environmental problems, we designed GaTe/PtS 2 van der Waals heterojunction with excellent light absorption solar-to-hydrogen efficiency, which is an photocatalytic heterojunction.
In this study, the InSb/InSe heterostructure is systematically examined in terms of its electronic properties through first-principles calculations. According to our findings, a kind unique direct band gap semiconductor, which has inherent type-II alignment, resulting significant photogenerated electron-hole pair separation space. When external electric field applied, Stark effect observed gap. Interestingly, application -0.3 V Å-1 field, such transformed into type-I from type-II....