A5079358646- Metal and Thin Film Mechanics
- Plasma Diagnostics and Applications
- Vacuum and Plasma Arcs
- Diamond and Carbon-based Materials Research
- Ion-surface interactions and analysis
- Boron and Carbon Nanomaterials Research
- Advanced Sensor Technologies Research
- Plasma Applications and Diagnostics
- Particle accelerators and beam dynamics
- Semiconductor materials and devices
- Electrostatic Discharge in Electronics
- Electrohydrodynamics and Fluid Dynamics
- Mass Spectrometry Techniques and Applications
- Pulsed Power Technology Applications
- Magnetic confinement fusion research
- Dust and Plasma Wave Phenomena
- Copper Interconnects and Reliability
- Advanced materials and composites
- Semiconductor materials and interfaces
- Pigment Synthesis and Properties
- Nuclear Physics and Applications
- GaN-based semiconductor devices and materials
- Gyrotron and Vacuum Electronics Research
- Advanced Machining and Optimization Techniques
- Surface Modification and Superhydrophobicity
Institute of High Current Electronics
2014-2023
Siberian Branch of the Russian Academy of Sciences
2019-2023
Tomsk State University of Control Systems and Radio-Electronics
2000-2015
Russian Academy of Sciences
2005-2010
Lawrence Berkeley National Laboratory
1998-2000
University of California, Berkeley
1998-2000
We have developed a hollow-cathode glow discharge plasma for dc broad beam ion source. For source, it is hard to obtain adequate pressure drop between the space and extraction region. The high-current low-voltage mode of limited about 10−3 Torr, but stable ions without breakdown needs be at least one order magnitude lower. To decrease operation glow, an external electron was used. These electrons were generated in “keep-alive” are accelerated cathode layer primary discharge. In this way we...
A joint research and development effort has been initiated, whose ultimate goal is the enhancement of mean ion charge states in vacuum arc metal plasmas by a combination discharge electron cyclotron resonance (ECR) heating. Metal plasma was generated special mini-gun. Plasma pumped high frequency gyrotron-generated microwave radiation. The results have demonstrated substantial multiple ionization ions. For lead plasma, ECR heating increased maximum attainable state from Pb2+ up to Pb6+....
An ion source based on a planar magnetron sputtering device with thermally isolated target has been designed and demonstrated. For boron target, high temperature is required because low electrical conductivity at room temperature, increasing temperature. The well-insulated can be heated by an initial low-current, high-voltage discharge mode. A power of 16 W was adequate to attain the surface (400 degrees C), followed transition high-current, low-voltage mode for which enters self-sputtering...
Boron ion beams are widely used for semiconductor implantation and surface modification improving the operating parameters increasing lifetime of machine parts tools. For latter application, purity requirements boron not as stringent technology, a composite cathode lanthanum hexaboride may be suitable production ions. We have explored use two different approaches to plasma production: vacuum arc planar high power impulse magnetron in self-sputtering mode. discharge, is generated at spots,...
This paper is devoted to the engineering embodiment of modern methods for producing charged ion and electron beams by extracting them from plasma a discharge. Electron use execute electron-beam welding, annealing, surface heating materials realize plasmochemical reactions stimulated fast electrons. Ion allow realization technologies implantation or ion-assisted deposition coatings thereby opening new prospects creation compounds alloys method that makes it possible obtain desired parameters...
An ion source based on a hollow-cathode Penning discharge was switched to high-current pulsed mode (tens of amperes and tens microseconds) produce an intense hydrogen beam. With molecular (H2), the beam contained three species: H(+), H2(+), H3(+). For all experimental conditions, fraction H2 (+) ions in about 10 ÷ 15% total current varied little with parameters. At same time, ratio H(+) H3(+) depended strongly current, particularly its distribution gap between hollow planar cathodes....
The gaseous ion source based on a hollow cathode glow discharge with additional external injection of electron beam described in previous publication has undergone further development. direction the upgrade was to increase total current and its density keeping same broad cross section (about 100 cm2). With an operating gas pressure 10−4 Torr, maximum stable as high 40 A 300 μs (pulsed mode) about 10 (dc without gap arc breakdown. emission exceeded 1 both cases. geometry optimized, allowing...
We describe a small hollow-cathode plasma source suitable for small-scale materials synthesis and modification application. The supporting electrical system is minimal. gaseous delivers ion current of up to about 1mA. Here we outline the construction operation, present some its basic performance characteristics.
The paper describes the principle of operation, design special features, and parameters an inverted time-of-flight spectrometer. spectrometer is designed in such way that its deflecting plates, drift tube, primary measuring system are at high potential with respect to ground potential, whereas plasma formed near grounded electrodes. This type configuration greatly extends application range device, making it possible measure mass-to-charge composition wide parameters.
Direct current magnetron sputtering and evaporation have been used to form thin films with a columnar structure having chevron-like morphology. This type of morphology is one the possible types present in sculptured films. The tilt angle grains was controlled by variation incidence depositing species, carrying out deposition at number different angles microstructure were formed. Films copper, aluminium alumina produced technique described here. It demonstrated that under certain conditions...
We have made and tested a very low energy gaseous ion source in which the plasma is established by discharge with electron injection an axially diverging magnetic field. A constricted arc hidden cathode spot used as emitter (first stage of discharge). The flux so formed filtered judiciously shaped electrode to remove macroparticles (cathode debris from spot) material well atoms ions. anode mesh, also serves second discharge, providing high current that injected into field region where...
We report here experimental evidence of electron oscillation within the toroidal-section magnetic duct a filtered vacuum arc plasma source. Our results clearly demonstrate that electrons can oscillate inside under combined effects electric and fields. In another experiment, we observe that, influence motion, trajectories ions are more or less unchanged except in intensity when Bilek plate is biased. Finally, our time-of-flight experiments show due to collisional scattering between...
A method for generating high charge state heavy metal ion beams based on power microwave heating of vacuum arc plasma confined in a magnetic trap under electron cyclotron resonance conditions has been developed. feature the work described here is use cusp field with inherent "minimum-B" structure as confinement geometry, opposed to simple mirror device we have reported previously. The configuration successfully used gas discharge and extraction from highly charged, current, gaseous beams....
Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase rates, molecular ions are used. Boron phosphorous (or arsenic) implantation is needed for P-type N-type semiconductors, respectively. Carborane, the most stable boron leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized utilized in ITEP Bernas source large...