A5024749500- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Photonic Crystals and Applications
- Plasmonic and Surface Plasmon Research
- Graphene research and applications
- Optical Network Technologies
- GaN-based semiconductor devices and materials
- Laser-Matter Interactions and Applications
- Advanced Photonic Communication Systems
- Semiconductor Quantum Structures and Devices
- Carbon Nanotubes in Composites
- Silicon Carbide Semiconductor Technologies
- Transition Metal Oxide Nanomaterials
- Mechanical and Optical Resonators
- Luminescence Properties of Advanced Materials
- Metal and Thin Film Mechanics
- 3D IC and TSV technologies
- Perovskite Materials and Applications
- Electronic Packaging and Soldering Technologies
- Semiconductor materials and devices
- 2D Materials and Applications
- Silicon Nanostructures and Photoluminescence
- Advancements in Semiconductor Devices and Circuit Design
- Advancements in Photolithography Techniques
- Ferroelectric and Piezoelectric Materials
Institut des Nanotechnologies de Lyon
2015-2023
École Centrale de Lyon
2018-2023
Université Claude Bernard Lyon 1
2015-2023
Centre National de la Recherche Scientifique
2015-2023
Institut National des Sciences Appliquées de Lyon
2023
École d'Ingénieurs en Chimie et Sciences du Numérique
2023
University of Cambridge
2016
Laboratoire Ampère
2014-2015
STMicroelectronics (Italy)
2005
STMicroelectronics (France)
2005
We study the nonlinear optical properties of graphene integrated onto Si3N4 waveguides under picosecond and subpicosecond pulsed excitation at telecom wavelength. Saturable absorption guided-mode is measured, temporal effects related to photoexcited carrier dynamics in are highlighted. Thereafter, a model carriers implemented into Schrödinger equation order simulate pulse propagation across hybrid graphene/Si3N4 waveguide. This allows us extract phenomenological parameters saturable...
Nano-cathodoluminescence (Nano-CL) reveals optical emission from individual InGaN quantum wells for applications in optoelectronic devices. We show the luminescent intensity decays over time with exposure to electron beam energies between 80 and 200 keV. Measurements of CL an exponential decline intensity, which we propose is due formation nitrogen Frenkel defects. The measured damage decreases reductions accelerating voltage suggest that induced structural may be suppressed below proposed...
Recently, the nonlinear optical response of graphene has been widely investigated, as integration this 2D material onto dielectric waveguides so to enhance various phenomena that underpin all-optical signal processing applications at telecom wavelengths. However, a great disparity continues exist from these experimental reports, depending on used conditions or hybrid devices under test. Most importantly, graphene-based were tested relatively low powers, and/or combined with waveguide...
Mechanical reliability is widely recognized as the primary obstacle to productionization of porous low-k materials. The combination weak bulk and interfacial properties with increasingly complex geometries poses a considerable challenge at 65-nm node. final solution must be sufficiently robust so ensure compatibility multiple substrate types, interconnect configurations packages. In this work, material engineering, modeling, design rule tailoring, assembly optimization are employed achieve...
We exploit slow light (high ng) modes in planar photonic crystals order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can structures with low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited laser applications. show that optimized 30 μm long cavity yields 9 frequency-equidistant FSR 178 GHz...
We demonstrate a graphene based electro-optic free-space modulator yielding reflectance contrast of 20% over strikingly large 250nm wavelength range, centered in the near-infrared telecom band. Our device is on original association planar Bragg reflector, topped with an electrically contacted double-layer capacitor structure employing high work-function oxide shown to confer static doping absence external bias, thereby reducing switching voltage range +/-1V. The design, fabrication and...
A free-space electro-optic modulator device exploiting graphene’s surface plasmon polariton (SPP) at near-infrared frequencies is proposed and theoretically studied. The made up of two resonant structures, the first being a metallic SPP displaying broadband absorption, second own SPP, which shown to frustrate when excited, leading narrow reflectance peak. Doping graphene achieve Fermi-level tuning shift wavelength frustration phenomenon, thereby enabling use as modulator. reduction 20% in...
Few layers graphene has been grown on 4H-SiC. Since this material outstanding electronic properties, we aimed fabricating field-effect transistors silicon carbide wafer. Growth of the was made by e-beam sublimation silicium under ultra high vacuum (UHV). These were patterned and used as channels with source drain P + SiC. The different technological steps checked through Raman spectroscopy, Scanning Electron Microscopy (SEM), electrical characterizations.
Graphene has unique properties, which makes it a very promising candidate for electronic and photonic devices [1]. In particular, its third-order nonlinear response been widely investigated, notably at telecom wavelength within integrated optics architectures, as graphene could be used to locally enhance the of dielectric waveguides by few orders magnitude [2], [3]. However, despite some recent progress model [4], discrepancy between values that have experimentally measured in literature is...
Après avoir suscité l’intérêt du secteur microélectronique, le graphène, matériau bidimensionnel constitué d’un monofeuillet d’atomes de carbone, pourrait bien devenir un phare l’optoélectronique. Ses propriétés optiques rendent pertinent pour large spectre d’applications, dont potentiel est loin d’être épuisé, en particulier l’optique intégrée. Renforcer son interaction avec la lumière reste enjeu important miniaturisation des composants.
We realize compact active photonic crystal cavities for miniaturized chip-based pulsed lasers. experimentally validate our approach relying on slow-light dispersion engineering sustaining the intended regular comb of modes from a 30 µm long cavity.
The realization of mode-locked lasers capable generating short optical pulses in the near-infrared is a key enabler for various applications including high data rate interconnects. related technology mostly consists bulky and stand-alone devices, which tends to hinder their widespread use. In addition, integration such devices onto chip-based platforms could bring advantages terms robustness stability, while offering some prospects advanced hybrid photonic-electronic architectures. There has...
We investigate the saturable absorption of hybrid graphene/silicon-nitride waveguides at telecom wavelengths. By measuring power dependent transmission picosecond and sub-picosecond pulses, we clarify temporal dynamics photo-excited carriers in graphene.
We investigate the saturable absorption of hybrid graphene/ silicon-nitride waveguides at telecom wavelengths. By measuring power dependent transmission picosecond and sub-picosecond pulses, we clarify temporal dynamics photo-excited carriers in graphene. © 2019 The Author(s)
Since the isolation of graphene monolayers in 2004, attention has turned to embedding this 2D material into optical components such as modulators, frequency converters and clocks. Indeed, exhibits some remarkable properties wideband absorption both normal-incidence (free-space applications) grazing-incidence (waveguide based applications), intrinsic supporting surface plasmon polariton (SPP) waves, a full catalogue non-linear behaviors including saturable multiple-photon mixing phenomena....
We show that the photonic dispersion of a two coupled-mode system can be actively tuned using graphene-induced non-radiative loss. Our implementation exploits spatial modulation graphene’s absorption via patterned oxide substrates.