Gallium nitride (GaN) is a wide bandgap semiconductor material and the most popular after silicon in industry. The prime movers behind this trend are LEDs, microwave, more recently, power electronics. New areas of research also include spintronics nanoribbon transistors, which leverage some unique properties GaN. GaN has electron mobility comparable with silicon, but that three times larger, making it an excellent candidate for high-power applications high-temperature operation. ability to...

In this paper, we present the fabrication process of a shape memory alloy (SMA) thin film in both monolithic and hybrid configurations. This provides an effective actuation part for gripper made SU-8 thick photoresist. We also extensively describe discuss assembly SMA with mechanism. Measurements show that is able to achieve opening action 500 μm amplitude at frequency 1 Hz. Finite element model simulations indicate force 50 mN, corresponding 400 amplitude, should be produced by actuator....

We report a theoretical investigation, free of any adjustable parameters, concerning the size and shape effects on melting enthalpy, for different shapes "free-standing" nanostructures. To easily calculate nanoscale enthalpy wide range metals semiconductors, convenient parameter (αshape) is defined. A comparison between Guisbiers et al., Jiang Shandiz al. models with experimental molecular dynamics results done. Until D ∼ 10 nm, effect entropy can be neglected.

The areal energy density of on‐chip micro‐supercapacitors should be improved in order to obtain autonomous smart miniaturized sensors. To reach this goal, high surface capacitance electrode (>100 mF cm −2 ) has produced while keeping low the footprint area. For carbide‐derived carbon (CDC) micro‐supercapacitors, properties metal carbide precursor have fine‐tuned fabricate thick electrodes. ad‐atoms diffusion process and atomic peening effect occurring during titanium sputtering are shown...

A fully integrated electromechanical resonator is described that based on high mobility piezoelectric semiconductors for actuation and detection of nanoscale motion. We employ the two-dimensional electron gas present at an AlGaN/GaN interface properties this heterostructure to demonstrate a resonant high-electron-mobility transistor enabling strain variation. In device, we take advantage polarization field divergence originated by mechanical flexural modes generating doping. This enables...

Dew retting of flax stems is a key agricultural process which facilitates fiber extraction from parent stems. If sensors are to be developed monitor the degree for optimal extraction, then stem characteristics such as water uptake and loss need accurately known. Here, moisture drying behavior short samples in different degrees dew studied. Their characterized laboratory conditions following simulated light heavy rainfall. The data were fitted with Page model loss. It was observed that rate...

The absorption coefficient of thick-films the negative photoresist SU-8 is observed to be time dependent during photolithographic exposure by I-line ultraviolet light (λ=365nm); varying linearly from 38±1cm−1 49±1cm−1 for a surface dose 415mJ∕cm2. We develop general model which enables calculated at given depth time. determine critical subsequent polymerization having an arbitrary thickness 49.4±3.9mJcm−2.

In this paper, we have investigated the size and shape effects on creep diffusion phenomena at nanoscale. From a classical thermodynamic model, higher of nanostructures is explained. As particularly due to processes, it therefore important consider Therefore, be able control in nanoworld, temperature stress thresholds, taking into account nanostructure, are defined.

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> A 14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in front-end process is demonstrated. The devices are flexural vibration mode beams ( <formula formulatype="inline"> <tex>$L=\hbox{10} \ \mu\hbox{m},\break w=\hbox{165} \hbox{nm}, \hbox{and} h= \hbox{400} \hbox{nm}$</tex></formula>) with 120-nm gaps. This letter details the...

This paper deals with parallel-plate electrostatic actuators in liquids. We study the stability conditions of such and show that pull-in effect can be shifted beyond one-third gap, even suppressed. demonstrate insulating layers actuator plates, which are originally designed to avoid any current leakages or short-circuits, play a major role this phenomenon. Experiments performed on fabricated devices; silicon nitride used completely encapsulate plates. The voltages required close gap measured...

The fracture toughness, hardness, and Young’s modulus of tantalum thin films are investigated based on nanoindentation measurements. A lower estimate the toughness a 100 nm film is 0.28±0.07 MPa m1/2. hardness increases when reducing thickness whereas decreases slightly. More precisely, thick four times higher than bulk behavior. simple theoretical model, connection between melting temperature, predicts an inverse grain size variation in confirmed by experiments.

This paper proposes a successful asynchronous remote powering and control of electrostatic microactuators, organized in two distributed micro motion systems (DMMS) with the aim realizing wireless microrobot. Remote integrated circuit (IC) microelectromechanical (MEMS) components is obtained by inductive coupling at 13.56 MHz, digital transmission created modulating carrier amplitude 25%. The system includes high-voltage controller IC. It provides link between power data on receiver antenna...

Capacitive measurement of very small displacement nano-electro-mechanical systems (NEMS) presents some issues that are discussed in this article. It is shown performance fairly improved when integrating on a same die the NEMS and CMOS electronics. As an initial step toward full integration, in-plane suspended gate MOSFET (SGMOSFET) compatible with front-end has been developed. The device model, its fabrication, experimental presented. Performance obtained experimentally compared to one...

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> In this paper, we present the design, fabrication, and operation of a two-dimensional (2-D) microconveyance system. Conceptually, system was designed as mechanical part an autonomous decentralized composed integrated micro actuator–sensor–controller cells. The presented is 2-D ciliary motion (2-D CMS) arrayed cantilever actuators. actuators are made two types polyimide with different thermal...

We report a theoretical investigation, at the nanoscale, free of any adjustable parameters, concerning size, shape, composition, and segregation effects on melting temperature energy band gap zinc-blende III-V semiconductors. The corresponding nanophase diagram is established. From it, composition ternary semiconducting nanoalloy are deduced. Moreover, liquid surface energies for AlP, GaP, AlAs, AlSb have been calculated ($0.566\ifmmode\pm\else\textpm\fi{}0.060$,...

We investigate the response of a GaN microelectromechanical resonator where strain detection is performed by resonant high-electron mobility transistor (R-HEMT). The R-HEMT gate located above 2-DEG (two-dimensional electron gas) appears to enable strong control electromechanical with voltage dependence close transconductance pattern. A quantitative approach based on carriers induced in device piezoelectric buffer proposed. These results show for first time versus external biasing and confirm...

A concept of atomic force microscopy (AFM) oscillating sensors using electromechanical silicon microresonators is presented, and imaging capabilities are demonstrated. The designed to feature MHz resonance frequencies, they batch fabricated standard microtechnologies. Integrated capacitive transducers allow drive the resonator sense its vibration amplitude. nanotip located at a maximum displacement for sensing near-field forces when interacting with surface. device has been mounted on...

We present an integrated force probe based on a silicon bulk-mode MEMS resonator. This device uses ring with symmetrical tips vibrating in the elliptic vibration mode. The enable us to make mechanical interactions surfaces or external objects. Both excitation and detection of resonator are thanks electrostatic actuation capacitive detection. Apart from optical electrical characterizations fabricated device, we report for first time interaction between tip hydrodynamic applied water droplet....

In this paper, top-down and bottom-up approaches are used to predict material properties of group III-nitride nanostructures. The first approach calculates the melting temperature, enthalpy, Debye temperature energy bandgap InN, GaN AlN through classical thermodynamics. second surface energies in liquid solid states considered nitrides materials molecular dynamics. Moreover, zinc-blende wurtzite III–V compared. Finally, phase diagram a ternary nanomaterial, AlGaN, is presented variation its...