A5055753968- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Sensor and Energy Harvesting Materials
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Non-Invasive Vital Sign Monitoring
- Muscle activation and electromyography studies
- Non-Destructive Testing Techniques
- MXene and MAX Phase Materials
- Tactile and Sensory Interactions
- Hand Gesture Recognition Systems
- Advanced biosensing and bioanalysis techniques
- Diabetes, Cardiovascular Risks, and Lipoproteins
- Ultrasonics and Acoustic Wave Propagation
- Diabetes Management and Research
- Electrochemical sensors and biosensors
- Gas Sensing Nanomaterials and Sensors
- Neural Networks and Reservoir Computing
- Data Stream Mining Techniques
- Electrical and Bioimpedance Tomography
- Thin-Film Transistor Technologies
- Transition Metal Oxide Nanomaterials
- Thermoregulation and physiological responses
- Photorefractive and Nonlinear Optics
- Machine Learning and Data Classification
National University of Singapore
2019-2024
Photonic neural network has been sought as an alternative solution to surpass the efficiency and speed bottlenecks of electronic network. Despite that integrated Mach-Zehnder Interferometer (MZI) mesh can perform vector-matrix multiplication in photonic network, a programmable in-situ nonlinear activation function not proposed date, suppressing further advancement Here, we demonstrate efficient accelerator comprising unique solution-processed two-dimensional (2D) MoS2 Opto-Resistive RAM...
A ferroelectric field-effect transistor (FeFET), capable of logic and memory functionalities in a single device, is promising three-terminal memtransistor that enables high-performance in-memory computing for non Von Neumann architectures. Among all HfO2-based materials, HfZrO2 (HZO) has attracted the most attention due to low process temperature ≤500 °C; however, it relatively weak polarization. Many prior works claimed way improve HZO-based FeFET characteristics enhance HZO properties,...
This brief presents a wireless smart glove based on multi-channel capacitive pressure sensors that is able to recognize 10 American Sign Language gestures at the edge. In this system, 16 are fabricated capture hand gestures. The sensor data captured by 16-channel CDMA-like capacitance-to-digital converter for training/inference edge device. Unlike conventional approach where information recovered before further signal processing, our proposed system takes advantage of capability machine...
As 5G communication technology allows for speedier access to extended information and knowledge, a more sophisticated human–machine interface beyond touchscreens keyboards is necessary improve the bandwidth overcome interfacing barrier. However, full extent of human interaction operation dexterity, spatial awareness, sensory feedback, collaborative capability be replicated completely remains challenge. Here, we demonstrate hybrid-flexible wearable system, consisting simple bimodal capacitive...
Integral to the success of semiconductor industry in keeping up with Moore's law is importance failure analysis (FA). Accurate and fast FA vital ensuring yield, reliability, rapid production industry. However, locating defects among tens billions transistors packed tiny modern microchip not a trivial task. Not only process technology has achieve such high integration devices evolved become astoundingly sophisticated but also debugging for these chips remarkably complex. With electrical...
We report on the dual mechanical and proximity sensing effect of soft-matter interdigitated (IDE) capacitor sensors, together with its modelling using finite element (FE) simulation to elucidate mechanism. The IDE is based liquid-phase GaInSn alloy (Galinstan) embedded in a polydimethylsiloxane (PDMS) microfludics channel. use liquid-metal as material for soft sensors allows theoretically infinite deformation without breaking electrical connections. capacitance result E-field line...
Memtransistors that combine the properties of transistor and memristor hold significant promise for in-memory computing. While superior data storage capability is achieved in memtransistors through gate voltage-induced conductance modulation, lateral device configuration would not only result high write bias, which compromises power efficiency, but also suffers from unsuccessful memory reset leads to reliability concerns. To circumvent such performance limitations, an advanced physics-based...
Abstract Competitive‐learning‐based spiking neural networks are capable of rapid, highly accurate pattern recognition with minimal data through denoising mechanisms provide by adaptive interneuron inhibition. However, hardware implementations such currently area‐inefficient due to the high device count require execute dual excitatory‐inhibitory synapses. To mitigate this, n‐ / p‐ reconfigurable tungsten diselenide memtransistors is introduced that can excitatory and inhibitory synapses in a...
In this article, we demonstrate a low-thermal budget defect-engineered process to achieve top-gated (TG) oxide–semiconductor ferroelectric field-effect transistors (FeFETs). The demonstrated TG FeFETs, with the channel length scaled down 40 nm, exhibit highly stabilized memory window (MW) of 2 V and high current ON/ OFF ratio <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{6}}$...
We demonstrate, for the first time, a short-channel (L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf> :40nm) back-end-of-line (BEOL) compatible top-gated (TG) self-aligned FeFETs with ultra-low interface/bulk trap density (D xmlns:xlink="http://www.w3.org/1999/xlink">it</inf> /D xmlns:xlink="http://www.w3.org/1999/xlink">bulk</inf> ) down to 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> cm...
In this work, Ge 2 Sb Te 5 (GST) thin films are irradiated by a 1064 nm pulsed laser heat treatment system with different beam profiles. The surface effects induced conditions studied systematically atomic force microscope, spectroscopic ellipsometry, and Raman spectroscopy. It is found that top-hat profile uniform intensity distribution demonstrates the advantages of non-destructive homogeneous surface, which critical for large-scale processing uniformity. threshold fluence amorphization...
Body core temperature (T
If Si CMOS for massive M3D is difficult due to need high-thermal-budget processes, are there solutions that beyond Si? In this article, we discuss two low-thermal-budget approaches: Oxide Semiconductor and 2D Materials integration. By reviewing some of our recent work with IGZO-based transistors memories, followed by investigation the material opportunities 3D highlight new additive techniques heterogenous multi-material integration as well low-temperature modification. Given unlikelihood...
The recent legalization of cannabidiol (CBD) to treat neurological conditions such as epilepsy has sparked rising interest across global pharmaceuticals and synthetic biology industries engineer microbes for sustainable production medicinal CBD. Since the process involves screening large amounts samples, main challenge is often associated with conventional platform that time consuming, laborious high operating costs. Here, a portable, high-throughput Aptamer-based BioSenSing System (ABS3 )...
In this work, we elucidate the fundamental bias stress reliability mechanism in oxide-semiconductor devices and provided guidelines to improve interface/bulk-induced V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> degradation. We provide further insights into defect-self compensation effect for bilayer ITO-IGZO channel. Specifically, how our process approach led effective passivation of channel defects such as negative-U defects,...
Good quality packaging prevents contamination, secures preservation, and increases the ease of transportation in food medical industries. One particular weakness package lies seal region where contents can be unintentionally incorporated, which disrupts sealing process compromises structure durability seal. To validate effectively at high speed, a non-destructive high-resolution inspection approach combining enhanced sensors reconstruction techniques is required. As flat defects are...
In this paper, a high-speed, high-accuracy, and nondestructive electro-capacitive sensing method to locate micro defects anomalies present in product packaging is presented. Using two types of capacitive sensor, single full plate electrode 14 pair sensor array combined footprint 306 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , we show that micro-particles with an average size 120 μm incorporated package seal can be detected...