This work investigates the electronic band structures of bulk Ge1-xSnx alloys using empirical pseudopotential method (EPM) for Sn composition x varying from 0 to 0.2. The adjustable form factors EPM were tuned in order reproduce features that agree well with reported experimental data. Based on adjusted factors, calculated along high symmetry lines Brillouin zone. effective masses at edges extracted by a parabolic line fit. bowing parameters hole and electron then derived fitting mass...

In this work, we report the first demonstration of GeSn pTFET. Good device characteristics were obtained. This may be attributed to direct BTBT, high hole mobility in channel, and formation abruptly heavily doped N+ source. The I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> performance can improved with further optimization.

We report the demonstration of germanium-tin (GeSn) p-channel tunneling field-effect transistor (p-TFET) with good device performance in terms on-state current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> ). With incorporation Sn, conduction band minima at Γ-point GeSn alloy shift down, increasing direct band-to-band (BTBT) generation rate source-channel junction TFET. In addition, n-type dopant activation temperature below 400 °C...

The ballistic transport performance of field-effect transistor (FET) based on hydrogenated silicene and germanene, i.e., silicane germanane, respectively, is examined. electronic band structures germanane are investigated using the first-principles density functional theory. Subsequently, FETs evaluated via semiclassical model. We find that n-MOSFET offers a relatively better ON-current than transistors made 2-D transition metal dichalcogenides (2-D-TMDs) (MoS <sub...

In this work, we present a unique approach of combining TCAD modelling and machine learning to detect the defect locations bridging in single-fin FinFET. The prediction location is guided by predictive model consisting Random Forest algorithm which trained with measurable electrical attributes from I-V. High accuracy predicting achieved proposed scheme can further enhance FA success rate, expediting cycle design product.

Integral to the success of semiconductor industry in keeping up with Moore's law is importance failure analysis (FA). Accurate and fast FA vital ensuring yield, reliability, rapid production industry. However, locating defects among tens billions transistors packed tiny modern microchip not a trivial task. Not only process technology has achieve such high integration devices evolved become astoundingly sophisticated but also debugging for these chips remarkably complex. With electrical...

We investigate germanium-tin alloy (Ge1−xSnx) as a material for the design of tunneling field-effect transistor (TFET) operating at low supply voltages. Compared with Ge, Ge1−xSnx has smaller band-gap. The reported band-gap Ge0.89Sn0.11 is 0.477 eV, ∼28% than that Ge. More importantly, becomes direct when Sn composition x higher 0.11. By employing in TFET, band-to-band (BTBT) realized. Direct BTBT generally probability indirect BTBT. drive current TFET boosted due to and reduced Ge1−xSnx....

An experiment was designed to check theoretical predictions of charge homogenization and emittance growth in nonuniform space-charge-dominated beams due conversion field energy into transverse kinetic energy. Five beamlets were masked out a solid 5-keV electron beam injected periodic solenoidal focusing channel. Phosphor screen images showed that the merged an almost uniform density single beam. Images five-beamlet configuration observed at distance 7-8 lens periods. Experimental results on...

Various studies showed that inhaled fine particles with diameter less than 10 micrometers (PM10) in the air can cause adverse health effects on human, such as heart disease, asthma, stroke, bronchitis and like. This is due to their ability penetrate further into lung alveoli. The aim of this study develop a state-of-art reliable technique use surveillance camera for monitoring temporal patterns PM10 concentration air. Once quality reaches alert thresholds, it will provide warning alarm human...

We report the ultimate performance of a double-gate ultrathin body (DG-UTB) FET employing materials from group IV, III-V, and 2-D based on International Technology Roadmap for Semiconductors (ITRS) projected specifications high-performance (HP) low-power (LP) technologies. The band structures channel were obtained using sp <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> d xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> s* tight...

A novel tunneling field-effect transistor (TFET) with an L-shaped Ge source is investigated. The device comprises a that extends underneath Si-channel region and separated from the drain by insulator (SiO 2 ). By optimizing overlap length of extended L OV Si body thickness T , current due to vertical band-to-band (BTBT) Ge–Si hetero-junction could be increased significantly scalable . This leads higher I ON improved S SiO also reduces OFF-state OFF blocking leakage paths. With extensive...

We investigated the effect of body thickness on electrical performance GaSb double-gate ultrathin-body (DG-UTB) MOSFET by examining band structure 12- (~2 nm), 24- (~4 36- (~6 and 48- (~8 nm) atomic-layer (AL) thick GaSb. Two different surface orientations, namely, (100) (111), were studied. sp <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> d xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> s...

The first monolithic integration of Ge p-FETs and InAs n-FETs on silicon substrate using a sub-120 nm III-V buffer technology is reported. A common digital etch process was developed to precisely control the etching Ge, enabling realization with body thickness T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">body</sub> below 5 channel lengths L xmlns:xlink="http://www.w3.org/1999/xlink">CH</sub> smaller than 200 nm. Other modules such as gate...

In recent years, electricity demands have increased because of the growing population. order to reduce energy consumption, several studies concluded that Non-Intrusive Load Monitoring (NILM) is effective in raising awareness for users monitor their daily consumption which beneficial conservation. NILM a technique and analyze usage through load measurements. These measurements are used examining appliances power behavior data can be modify habits utility bills. This paper proposes...

A simple two step wet etch approach to fabricate nanowires (NWs) with a tapered source/drain (S/D) architecture is presented. Based on the unique NW architecture, gate-all-around junctionless FETs sub-15-nm channel length (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CH</sub> ), height (H xmlns:xlink="http://www.w3.org/1999/xlink">NW</sub> and width (W ) were realized. Despite having large equivalent oxide thickness of ~4.5 nm, high...

In this paper, we perform a study of novel source structures in double-gate (DG) Tunneling Field-Effect Transistors (TFETs) by two-dimensional numerical simulation double gate tunneling field effect. Extended are employed both pure Ge TFETs and Ge-source Si-body TFETs, on-state current enhancement is observed results. Compared with conventional p+-p−-n+ the p+ region extended extends underneath gates. When large bias applied, high electric ξ, which distributes along p+-p− junction edge into...

Devices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase dynamic on-resistance. Therefore, characterization of trap states is necessary. In this study, temperature-dependent transient recovery analysis determined a energy level 0.08 eV stress, implying that interface traps responsible for collapse. Multi-frequency capacitance-voltage (C-V) testing was performed on MIS diode, calculating density range...

An improved simulation scheme for investigating the performance of nanoscale FETs is developed in this paper. The total current MOSFET consists two main components: thermionic above top barrier channel calculated by ballistic approach and tunneling computed Wentzel-Kramer-Brillouoin approximation based on a full-complex-band structure. Furthermore, to get atomic-position-based potential profile device, we self-consistently solve atomic charges potentials real space along transverse transport...

A novel tunneling field-effect transistor (TFET) with an L-shaped Ge source is investigated. The device comprises a that extends underneath Si-channel region and separated from the drain by insulator (SiO2). By optimizing overlap length of extended LOV Si body thickness TSi, current due to vertical band-to-band (BTBT) Ge–Si hetero-junction could be increased significantly scalable LOV. This leads higher ION improved S. SiO2 also reduces OFF-state IOFF blocking leakage paths. With extensive...

We propose an efficient framework for optimizing the design of Carbon Nanotube Field-Effect Transistor (CNTFET) through integration device physics, machine learning (ML), and multi-objective optimization (MOO). Firstly, we leverage calibrated TCAD model based on experimental data to dissect physical mechanisms CNTFET, gaining insights into its operational principles unique properties. This also serves as a foundation, enabling multi-scale performance evaluations essential dataset...

We report the first comparison study of BTI characteristics nTFET and nMOSFET with same high-k/metal gate stack fabricated on wafer. NTFETs demonstrate smaller ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> G xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> loss in under PBTI stress. speculate that trapped electrons density HfO xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> dielectric above tunnel junction (TJ) is lower than...